Abstract: A connector for optical fibers with lenses includes a ferrule to which an optical fiber with a lens is mounted and which has an end face inclined relative to a central axis, and a coupling member (sleeve) which coaxially couples a pair of the ferrules by making the ferrules to face each other in a non-contact state such that the end faces are parallel to each other. The ferrule has one or a plurality of holes which are parallel to the central axis at positions decentered from the central axis, the optical fiber with the lens being disposed in the hole, and the optical fibers with the lenses mounted to the pair of the ferrules have lens end faces which are inclined along the end faces of the ferrules so as to be optically coupled to each other.

Abstract: A connector for optical fibers with lenses includes a ferrule to which an optical fiber with a lens is mounted and which has an end face inclined relative to a central axis, and a coupling member (sleeve) which coaxially couples a pair of the ferrules by making the ferrules to face each other in a non-contact state such that the end faces are parallel to each other. The ferrule has one or a plurality of holes which are parallel to the central axis at positions decentered from the central axis, the optical fiber with the lens being disposed in the hole, and the optical fibers with the lenses mounted to the pair of the ferrules have lens end faces which are inclined along the end faces of the ferrules so as to be optically coupled to each other.

Abstract: A semiconductor device having a diffusion layer comprising: a semiconductor substrate of a first conductivity type comprising first and second portions having first and second impurity density, respectively, the first portion located so as to surround the second portion; a transistor having a first diffusion layer and a gate electrode, the first diffusion layer of the transistor formed in the first portion of the semiconductor substrate and having a third impurity density; and a semiconductor well of a second conductivity type formed between the first portion and the second portion of the semiconductor substrate, the semiconductor well having a fourth impurity density and formed so as to surround the first portion of the semiconductor substrate and located in the second portion of the semiconductor substrate.