Patents by Inventor Yuri Vygranenko

Yuri Vygranenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20230292557
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: April 21, 2023
    Publication date: September 14, 2023
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 11665934
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: May 30, 2023
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20220271111
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: May 11, 2022
    Publication date: August 25, 2022
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 11348984
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: May 31, 2022
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20210217832
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 10991777
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: April 27, 2021
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20190386080
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: August 28, 2019
    Publication date: December 19, 2019
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 10439013
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: October 8, 2019
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20190088729
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: November 16, 2018
    Publication date: March 21, 2019
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 10163996
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: December 25, 2018
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20170125498
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: January 11, 2017
    Publication date: May 4, 2017
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL
    Publication number: 20110272695
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: May 20, 2011
    Publication date: November 10, 2011
    Applicant: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Patent number: 7948170
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: May 24, 2011
    Assignee: Ignis Innovation Inc.
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Sheng Tao
  • Pixel having an organic light emitting diode and method of fabricating the pixel
    Publication number: 20070029545
    Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planariza-tion dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
    Type: Application
    Filed: February 24, 2004
    Publication date: February 8, 2007
    Applicant: IGNIS INNOVATION INC
    Inventors: Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Denis Striakhilev, Arokia Natham, Yuri Vygranenko, Sheng Tao