Patents by Inventor Yuri Yasuda

Yuri Yasuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor substrate including multiple nitrided gate insulating films
    Patent number: 6756635
    Abstract: A silicon oxide film with a film thickness of 5 to 7 nm is formed on a first region, a silicon oxynitride film with a film thickness of 2 to 3 nm, and a nitrogen concentration of 1 to 3 atom % is formed on a second region, and a silicon oxynitride film with a film thickness of 1 to 2 nm, and a nitrogen concentration of 3 to 5 atom % is formed on a third region on a silicon substrate. Then, radical nitriding is applied to the silicon oxide film, and the silicon oxynitride films.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: June 29, 2004
    Assignee: NEC Electronics Corporation
    Inventors: Yuri Yasuda, Naohiko Kimizuka
  • Semiconductor device and method for manufacturing the same
    Publication number: 20030214001
    Abstract: A silicon oxide film with a film thickness of 5 to 7 nm is formed on a first region, a silicon oxynitride film with a film thickness of 2 to 3 nm, and a nitrogen concentration of 1 to 3 atom % is formed on a second region, and a silicon oxynitride film with a film thickness of 1 to 2 nm, and a nitrogen concentration of 3 to 5 atom % is formed on a third region on a silicon substrate. Then, radical nitriding is applied to the silicon oxide film, and the silicon oxynitride films.
    Type: Application
    Filed: June 18, 2003
    Publication date: November 20, 2003
    Inventors: Yuri Yasuda, Naohiko Kimizuka
  • Semiconductor device and method for manufacturing the same
    Publication number: 20020185693
    Abstract: A silicon oxide film with a film thickness of 5 to 7 nm is formed on a first region, a silicon oxynitride film with a film thickness of 2 to 3 nm, and a nitrogen concentration of 1 to 3 atom % is formed on a second region, and a silicon oxynitride film with a film thickness of 1 to 2 nm, and a nitrogen concentration of 3 to 5 atom % is formed on a third region on a silicon substrate. Then, radical nitriding is applied to the silicon oxide film, and the silicon oxynitride films.
    Type: Application
    Filed: June 10, 2002
    Publication date: December 12, 2002
    Inventors: Yuri Yasuda, Naohiko Kimizuka
  • Cyclic compounds
    Patent number: 6489440
    Abstract: The present invention relates to novel Aerothricins represented by the Formula (I), wherein R1, R2, R3, R4, R5, X, Y, Z, and m are as defined in Claim 1; and pharmaceutically acceptable salts thereof. The present invention also relates to a pharmaceutical composition comprising an Aerothricin of the Formula (I) and a pharmaceutically acceptable carrier. Furthermore, the present invention relates to the use of such Aerothricins for the preparation of medicaments, as well as to processes and intermediates for the preparation of the Aerothricins of the Formula (I).
    Type: Grant
    Filed: July 23, 1999
    Date of Patent: December 3, 2002
    Assignee: Basilea Pharmaceutica AG
    Inventors: Masahiro Aoki, Masami Kohchi, Kazunao Masubuchi, Eisaku Mizuguchi, Takeshi Murata, Hiroaki Ohkuma, Takehiro Okada, Masahiro Sakaitani, Nobuo Shimma, Takahide Watanabe, Mieko Yanagisawa, Yuri Yasuda