Patents by Inventor Yurii Toomasovich Rebane

Yurii Toomasovich Rebane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6614060
    Abstract: An LED based on a two well system with charge asymmetric resonance tunnelling comprises first and second coupled wells, one being a wide well and the other an active quantum well. The wells are coupled via a resonance tunnelling barrier which is transparent for electrons and blocking for holes.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: September 2, 2003
    Assignee: Arima Optoelectronics Corporation
    Inventors: Wang Nang Wang, Yurii Georgievich Shreter, Yurii Toomasovich Rebane
  • Patent number: 6455870
    Abstract: The fabrication of unipolar light emitting devices (ULEDs) based on III-nitride semiconductors is disclosed using an effective “p-n junction” between two n-type III-nitride semiconductor superlattices. Such a device works like a usual light emitting diode at forward bias but the radiation arises not due to recombination of electrons and holes but due to electron transitions from a shallow sub-band superlattice into a deep sub-band superlattice.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: September 24, 2002
    Assignee: Arima Optoelectronics Corporation
    Inventors: Wang Nang Wang, Yurii Georgievich Shreter, Yurii Toomasovich Rebane
  • Patent number: 6380050
    Abstract: A method for growth of strain free epitaxial layers of semiconductors on highly lattice mismatched substrates is suggested using a buffer layer with a solid-liquid phase transition to accommodate high mismatch between substrate and semiconductor.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: April 30, 2002
    Assignee: Arima Optoelectronics Corporation
    Inventors: Wang Nang Wang, Yurii Georgievich Shreter, Yurii Toomasovich Rebane