Abstract: A device may include an inner layer comprising a polyvinylidene fluoride (PVDF) material. The device may also include a first interface layer, disposed on a first side of the inner layer, and a second interface layer, disposed on a second side of the inner layer. The first interface layer and the second interface layer may comprise a mixture of PVDF material and a scavenger component.

Abstract: An overheat protection device and a varistor are provided. The overheat protection device comprises: a first electrode and a second electrode disposed to be spaced apart; a hot-melt wire located between the first electrode and the second electrode, the hot-melt wire being in electrical contact with the first electrode and the second electrode; and an insulator supporting the first electrode and the second electrode, wherein the hot-melt wire is melted into a liquid hot-melt material when the ambient temperature reaches a predetermined temperature, the liquid hot-melt material wets the first electrode and the second electrode, and the liquid hot-melt material does not wet the insulator at least at a portion located between the first electrode and the second electrode.

Abstract: Embodiments of the disclosure are directed to a harness assembly including a substrate having a plurality of vias, and a trace formed atop the substrate, the trace extending between each of the plurality of vias. The harness assembly may further include a surface mounted device disposed within a via of the plurality of vias.

Abstract: An overheat protection device and a varistor are provided. The overheat protection device comprises: a first electrode and a second electrode disposed to be spaced apart; a hot-melt wire located between the first electrode and the second electrode, the hot-melt wire being in electrical contact with the first electrode and the second electrode; and an insulator supporting the first electrode and the second electrode, wherein the hot-melt wire is melted into a liquid hot-melt material when the ambient temperature reaches a predetermined temperature, the liquid hot-melt material wets the first electrode and the second electrode, and the liquid hot-melt material does not wet the insulator at least at a portion located between the first electrode and the second electrode.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

Abstract: A device may include an inner layer comprising a polyvinylidene fluoride (PVDF) material. The device may also include a first interface layer, disposed on a first side of the inner layer, and a second interface layer, disposed on a second side of the inner layer. The first interface layer and the second interface layer may comprise a mixture of PVDF material and a scavenger component.

Abstract: A method for forming a magnetoresistive sensor. The method may include dissolving a substrate, the substrate comprising plated nanowires, wherein a dissolved substrate is formed. The method may further include forming an intermediate mixture from the dissolved substrate, and forming pre-bundled nanowires from the intermediate mixture.

Abstract: A protection device may include a resistor, the resistor including a first end for coupling between a load and a second end for coupling to a DC source. The protection device may also include a capacitor having a first terminal coupled between the second end of the resistor and the DC source, and a second terminal coupled to ground, the capacitor further comprising a capacitor body, wherein the capacitor body comprises a ferroelectric material.

Abstract: A protection device may include a resistor, the resistor including a first end for coupling between a load and a second end for coupling to a DC source. The protection device may also include a capacitor having a first terminal coupled between the second end of the resistor and the DC source, and a second terminal coupled to ground, the capacitor further comprising a capacitor body, wherein the capacitor body comprises a ferroelectric material.

Abstract: Provided herein are positive temperature coefficient (PTC) devices including interdigitated contacts. In one approach, a PTC device includes a core component, and a first contact and a second contact disposed along a first side of the core component. Each of the first and second contacts may include a frame member, and a plurality of digits extending perpendicularly from the frame member. The plurality of digits of the first contact may be interleaved with the plurality of digits of the second contact. In some embodiments, the plurality of digits of the first contact and the plurality of digits of the second contact extend along a same plane, and are arranged substantially parallel to one another. In some embodiments, a polymer PTC material layer is provided over the plurality of digits of the first and second contacts. The interleaved contact digits permit the PTC device to function as a 2-D current collector.

Abstract: A corrosion resistant magnetoresistive sensor including an electrically insulating substrate, an electrically conductive first terminal disposed on a first end of the substrate, an electrically conductive second terminal disposed on a second end of the substrate, a plurality of nanowires disposed on the substrate between the first terminal and the second terminal, and an oxygen barrier composition covering the nanowires and protecting the nanowires from oxygen and moisture.

Abstract: A method for forming a magnetoresistive sensor. The method may include dissolving a substrate, the substrate comprising plated nanowires, wherein a dissolved substrate is formed. The method may further include forming an intermediate mixture from the dissolved substrate, and forming pre-bundled nanowires from the intermediate mixture.

Abstract: Method and system for forming a plurality of cadmium-sulfide layers. The method includes preparing a first solution and a second solution. The method further includes loading at least the first solution and the second solution into a pyrolysis-deposition system and placing a target structure into the pyrolysis-depositions system. The method further includes spraying the first solution through one or more first nozzles towards the target structure, forming, from the sprayed first solution, the first cadmium-sulfide layer, directly or indirectly, on the target structure, spraying the second solution through one or more second nozzles towards the target structure with at least the first cadmium-sulfide layer, and forming, from the sprayed second solution, the second cadmium-sulfide layer directly or indirectly, on the target structure.

Abstract: Method and system for forming a cadmium-sulfide layer on a substrate. The method includes preparing a solution and loading the solution into a pyrolysis-deposition system. The solution uses at least one cadmium-containing solute, at least one sulfur-containing solute, water, and at least one selected material. The pyrolysis-deposition system includes one or more nozzles and one or more heating devices. The method further includes placing a substrate into the pyrolysis-deposition system, adjusting a distance between the substrate and the one or more nozzles, heating the substrate with the one or more heating devices, and spraying the solution including the selected material towards the substrate. The selected material satisfies at least one property selected from a group consisting of the selected material being non-polar, the selected material having at least higher volatility than water, and the selected material having at least lower heat capacity than water.

Abstract: A method is provided for forming a Group IBIIIAVIA solar cell absorber layer including indium (In) and gallium (Ga) that are distributed substantially uniformly between the top surface and the bottom surface of the absorber layer. In one embodiment method includes forming a precursor by depositing a metallic layer including copper (Cu), indium (In) and gallium (Ga) on the base, and depositing a film comprising selenium (Se) and tellurium (Te) on the metallic layer. In the precursor, the molar ratio of Te to Ga is equal to or less than 1. In the following step, the precursor is heated to a temperature range of 400-600° C. to form the Group IBIIIAVIA solar cell absorber layer.