Patents by Inventor Yurong Wen

Yurong Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical resistor adjacent inactive gate over trench isolation
    Patent number: 10923469
    Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: February 16, 2021
    Assignee: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Hui Zang, Guowei Xu, Jiehui Shu, Ruilong Xie, Yurong Wen, Garo J. Derderian, Shesh M. Pandey, Laertis Economikos
  • VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION
    Publication number: 20200227404
    Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 16, 2020
    Inventors: Hui Zang, Guowei Xu, Jiehui Shu, Ruilong Xie, Yurong Wen, Garo J. Derderian, Shesh M. Pandey, Laertis Economikos