Abstract: Disclosed are a laser structure and a method for fabricating the laser structure. The method includes: providing an epitaxial structure, the epitaxial structure including a substrate, a first doped dielectric layer, a multiple quantum well active layer and a ridge-shaped doped dielectric layer stacked in sequence; forming a grating structure on the ridge-shaped doped dielectric layer and forming a reflective surface on one end of the grating structure, the reflective surface and the grating structure are defined by a same lithography mask, and the mask is protected in a semiconductor etching process selectively, ensuring that relative positions of the reflective surface and the grating structure are not changed, so that light reflected from the reflective surface back to laser cavity has a predetermined phase defined by design, therefore improves performance and stability of the laser, reduces complexity and cost of the fabrication process, and increases yield and reliability.

Abstract: Disclosed is a surface etched grating semiconductor laser with periodic pumping structure. The structure includes a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, periodic grating grooves formed on the ridge-shaped doped dielectric layer and a top electrical contact layer forming ohmic electrical contact with electrical contact regions between the grating grooves. Carriers are injected through the periodic electrical contact layer, flow through the electrical contact regions, spread laterally when reaching the bottom of the grating grooves, and then continue to spread to the multiple quantum well active layer. In a case of uniform distribution, a laser based on refractive index modulation is realized. In a case of non-uniform distribution, a laser with mixed modulation is realized by introducing additional gain modulation.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: Disclosed herein is a monolithically integrated coherent receiver chip which has a geometric arrangement of the on-chip components that significantly improves the performance and the manufacturability of a coherent receiver module for Dual Polarization Quadrature Phase Shift Keyed (DP-QPSK) applications and other optical coherent detection systems. The coherent receiver chip comprises two optical hybrids, three optical inputs and eight electrical outputs with the two optical hybrids oriented perpendicular to the optical inputs and the electrical outputs which are widely spaced and arranged in a co-linear fashion that simplifies module design and assembly. The proposed geometric arrangement also replaces any optical waveguide crossings with vertical electrical-optical crossings and includes electrical transmissions which are used to minimize channel skew. The proposed configuration also has the additional benefit of improved thermal management by separating the module's trans-impedance amplifiers.

Abstract: The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide while tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

Abstract: The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide whilst tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

Abstract: Disclosed herein is a monolithically integrated coherent receiver chip which has a geometric arrangement of the on-chip components that significantly improves the performance and the manufacturability of a coherent receiver module for Dual Polarization Quadrature Phase Shift Keyed (DP-QPSK) applications and other optical coherent detection systems. The coherent receiver chip comprises two optical hybrids, three optical inputs and eight electrical outputs with the two optical hybrids oriented perpendicular to the optical inputs and the electrical outputs which are widely spaced and arranged in a co-linear fashion that simplifies module design and assembly. The proposed geometric arrangement also replaces any optical waveguide crossings with vertical electrical-optical crossings and includes electrical transmissions which are used to minimize channel skew. The proposed configuration also has the additional benefit of improved thermal management by separating the module's trans-impedance amplifiers.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.

Abstract: Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.

Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.

Abstract: Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.

Abstract: A design for a polarization independent ridge waveguide structure is shown. The inventive waveguide structure features discontinuous trenches formed on either side of the waveguide in which the waveguide has a first polarization characteristic absent the trenches and a second polarization characteristic when the trenches are present. The length of the trenches and the distance between the trenches are chosen to provide a desired amount of attenuation to each of the TE and TM modes. Additionally, this method is used to cause a predetermined polarization in order to compensate for the polarization of another optical component.