Patents by Inventor Yury Toomasovich Rebane
Yury Toomasovich Rebane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11103960Abstract: This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules.Type: GrantFiled: January 30, 2019Date of Patent: August 31, 2021Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Patent number: 10828727Abstract: This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the first variation of the method, a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular to the axis of the beam, the laser beam is moved with scanning the layer separation plane with focus in the direction from the open side surface of the crystal deep into the crystal with forming a continuous slit width of which is increased with every pass of the laser beam, the previous operation is performed up to separation of the surface layer.Type: GrantFiled: November 29, 2011Date of Patent: November 10, 2020Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Publication number: 20190160598Abstract: This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules.Type: ApplicationFiled: January 30, 2019Publication date: May 30, 2019Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Patent number: 9966296Abstract: The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation, it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film.Type: GrantFiled: January 22, 2016Date of Patent: May 8, 2018Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Patent number: 9948065Abstract: The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.Type: GrantFiled: March 5, 2015Date of Patent: April 17, 2018Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Publication number: 20170110853Abstract: The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.Type: ApplicationFiled: March 5, 2015Publication date: April 20, 2017Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Publication number: 20160172228Abstract: The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation, it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film.Type: ApplicationFiled: January 22, 2016Publication date: June 16, 2016Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Patent number: 9337025Abstract: The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film.Type: GrantFiled: July 13, 2012Date of Patent: May 10, 2016Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Aleksey Vladimirovich Mironov
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Patent number: 7265374Abstract: A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.Type: GrantFiled: June 10, 2005Date of Patent: September 4, 2007Assignee: Arima Computer CorporationInventors: Stephen Lee, Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov
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Patent number: 7023892Abstract: The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.Type: GrantFiled: January 3, 2002Date of Patent: April 4, 2006Assignee: Arima Optoelectronics Corp.Inventors: Wang Nang Wang, Yury Georgievich Shreter, Yury Toomasovich Rebane
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Patent number: 7011711Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.Type: GrantFiled: May 23, 2003Date of Patent: March 14, 2006Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov, Sergey Igorevich Stepanov, Vladislav Evgenievich Bougrov, Vladimir Nikolaev, Maxim Nikolaevich Blashenkov, Alexander Nikolaevich Andreev, Stephen Sen-Tien Lee
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Patent number: 6924511Abstract: The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The triangle mesa structure (which can also be truncated) further comprises an active layer, a lower conducting mirror and an upper conducting mirror for vertical confinement of light in the optical cavity, a contact layer formed on the upper mirror, a metallic contact formed on the contact layer. An electrical current is applied to the device according to the invention through the metallic contact linked to the contact layer, and subsequently to the lower electrode through the lower mirror and the conducting substrate. The applied current results in light generation in the active layer with vertical light output through the metallic contact. A corresponding light generation method is also disclosed herein.Type: GrantFiled: January 3, 2002Date of Patent: August 2, 2005Assignee: Arima Optoelectronics Corp.Inventors: Wang Nang Wang, Yury Georgievich Shreter, Yury Toomasovich Rebane
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Publication number: 20040217381Abstract: The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The triangle mesa structure (which can also be truncated) further comprises an active layer, a lower conducting mirror and an upper conducting mirror for vertical confinement of light in the optical cavity, a contact layer formed on the upper mirror, a metallic contact formed on the contact layer. An electrical current is applied to the device according to the invention through the metallic contact linked to the contact layer, and subsequently to the lower electrode through the lower mirror and the conducting substrate. The applied current results in light generation in the active layer with vertical light output through the metallic contact. A corresponding light generation method is also disclosed herein.Type: ApplicationFiled: January 3, 2002Publication date: November 4, 2004Applicant: ARIMA OPTOELECTRONIC CORPORATIONInventors: Wang Nang Wang, Yury Georgievich Shreter, Yury Toomasovich Rebane
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Publication number: 20040129213Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.Type: ApplicationFiled: May 23, 2003Publication date: July 8, 2004Inventors: Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov, Sergey Igorevich Stepanov, Vladislav Evgenievich Bougrov, Vladimir Nikolaev, Maxim Nikolaevich Blashenkov, Alexander Nikolaevich Andreev, Stephen Sen-Tien Lee
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Publication number: 20030123509Abstract: The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.Type: ApplicationFiled: January 3, 2002Publication date: July 3, 2003Applicant: ARIMA OPTOELECTRONICS CORPORATIONInventors: Wang Nang Wang, Yury Georgievich Shreter, Yury Toomasovich Rebane
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Patent number: 6577661Abstract: A semiconductor laser with lateral optical cavity based on III-V or II-VI semiconductor compounds and their alloys is suggested. The essence of the disclosure is in the use of polygonal surface optical grating resonator (PGR) for lateral confinement of the light and selective excitation of the chosen optical mode. PGR allows fabricating of single mode semiconductor lasers needed for various applications such as CD and DVD pick up heads, high quality laser printers and others. Also, PGR allows controlled multiple wavelength operation of semiconductor lasers needed for telecommunication purposes. The technological advantage of PGR over traditional mesa-structure or ridge optical cavity resonators is in simplicity of integration of surface optical grating fabrication process into planar semiconductor technology.Type: GrantFiled: February 18, 2002Date of Patent: June 10, 2003Assignee: Arima Optoelectronics Corp.Inventors: Wang-Nang Wang, Yury Georgievich Shreter, Yury Toomasovich Rebane