Abstract: Carbon black in which an oil absorption amount is 150 mL/100 g or more and 400 mL/100 g or less and a cobalt content that is measured by induced coupled plasma-mass spectrometry is 20 ppb or less.

Abstract: Carbon black in which an oil absorption amount is 150 mL/100 g or more and 400 mL/100 g or less and a nickel content that is measured by induced coupled plasma-mass spectrometry is 50 ppb or less.

Abstract: Carbon black in which an oil absorption amount is 150 mL/100 g or more and 400 mL/100 g or less and an iron content that is measured by induced coupled plasma-mass spectrometry is 500 ppb or less.

Abstract: A semiconductor device improved in deterioration detection accuracy by using an inductance of a bonding wire. The semiconductor device includes a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern; a second conductor pattern formed on the insulating substrate for sensing the potential of the surface electrode of the semiconductor die device; a first bonding wire for connecting the surface electrode and the first conductor pattern; and a second bonding wire. Further, there is a voltage sensing unit which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and a deterioration detection unit for detecting deterioration of the first bonding wire by using the sensed potential difference.

Abstract: A solid electrolytic capacitor with reduced leakage current is provided. An anode foil dielectric oxide film is formed, a lead terminal which is connected to the anode foil, a capacitor element including the anode foil, is formed in the capacitor element, and a solid electrolyte containing a conductive polymer, and a coating layer for elasticating a conductive polymer forming solution between the anode foil and the lead terminal by forming a solid electrolytic capacitor. Preferably, the coating layer is a solid-state electrolytic capacitor formed at least in the opposite portion of the external leading terminals to the anodal foil.

Abstract: A testing apparatus for measuring a strength of a chip includes: a cassette mounting base on which to mount a cassette capable of accommodating wafer units; a frame fixing mechanism that fixes an annular frame of the wafer unit; a conveying mechanism that conveys the wafer unit between the cassette and the frame fixing mechanism; a pushing-up mechanism that pushes up a predetermined chip included in the wafer supported by the annular frame fixed by the frame fixing mechanism; a pick-up mechanism having a collet picking up the chip pushed up by the pushing-up mechanism; a strength measuring mechanism having a support unit supporting the chip picked up by the collet; and a collet moving mechanism that moves the collect from a position facing the pushing-up mechanism to a position facing the support unit.

Abstract: A measuring apparatus for measuring a flexural strength of a test piece includes a support unit having a first support member and a second support member that are spaced from each other, for supporting a lower surface of the test piece, a presser for pressing the test piece, a moving mechanism for relatively moving the presser toward and away from the test piece supported by the support unit, a load measuring unit for measuring a load applied to the presser when the presser presses the test piece supported by the support unit, and a controller having a calculating section for calculating the flexural strength of the test piece on the basis of a thickness and a width of the test piece, a spacing between the first support member and the second support member, and a maximum value of the load measured by the load measuring unit.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: An imaging unit for an ultrafast imaging apparatus includes an objective lens opposing a workpiece supported on a chuck table, a beam splitter disposed in a first optical path extending from the objective lens, an image processing unit disposed in a second optical path extending from the beam splitter, and an illumination unit disposed in a third optical path extending from the beam splitter. The illumination unit includes a broadband pulsed light source, and a spectrometer configured to divide a single pulse of light, which has been emitted from the broadband pulsed light source, into a plurality of wavelengths and to produce a time lag between each two adjacent ones of the plurality of wavelengths.

Abstract: A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Abstract: A semiconductor device improved in deterioration detection accuracy by using an inductance of a bonding wire. The semiconductor device includes a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern; a second conductor pattern formed on the insulating substrate for sensing the potential of the surface electrode of the semiconductor die device; a first bonding wire for connecting the surface electrode and the first conductor pattern; and a second bonding wire. Further, there is a voltage sensing unit which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and a deterioration detection unit for detecting deterioration of the first bonding wire by using the sensed potential difference.

Abstract: A measuring apparatus for measuring a flexural strength of a test piece includes a support unit having a first support member and a second support member that are spaced from each other, for supporting a lower surface of the test piece, a presser for pressing the test piece, a moving mechanism for relatively moving the presser toward and away from the test piece supported by the support unit, a load measuring unit for measuring a load applied to the presser when the presser presses the test piece supported by the support unit, and a controller having a calculating section for calculating the flexural strength of the test piece on the basis of a thickness and a width of the test piece, a spacing between the first support member and the second support member, and a maximum value of the load measured by the load measuring unit.

Abstract: An imaging unit for an ultrafast imaging apparatus includes an objective lens opposing a workpiece supported on a chuck table, a beam splitter disposed in a first optical path extending from the objective lens, an image processing unit disposed in a second optical path extending from the beam splitter, and an illumination unit disposed in a third optical path extending from the beam splitter. The illumination unit includes a broadband pulsed light source, and a spectrometer configured to divide a single pulse of light, which has been emitted from the broadband pulsed light source, into a plurality of wavelengths and to produce a time lag between each two adjacent ones of the plurality of wavelengths.

Abstract: A testing apparatus for measuring a strength of a chip includes: a cassette mounting base on which to mount a cassette capable of accommodating wafer units; a frame fixing mechanism that fixes an annular frame of the wafer unit; a conveying mechanism that conveys the wafer unit between the cassette and the frame fixing mechanism; a pushing-up mechanism that pushes up a predetermined chip included in the wafer supported by the annular frame fixed by the frame fixing mechanism; a pick-up mechanism having a collet picking up the chip pushed up by the pushing-up mechanism; a strength measuring mechanism having a support unit supporting the chip picked up by the collet; and a collet moving mechanism that moves the collect from a position facing the pushing-up mechanism to a position facing the support unit.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

Abstract: A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Abstract: A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

Abstract: A fluorescence detecting apparatus includes an excitation light applying section that applies excitation light to a protective film containing an absorbing agent. A photomultiplier tube detects fluorescence emitted from the absorbing agent due to absorption of the excitation light. A fluorescence passing filter removes light having wavelengths other than the wavelength of the fluorescence emitted from the absorbing agent, and a reflecting mirror having a reflecting surface reflects the fluorescence emitted from the protective film toward the photomultiplier tube. This reflecting surface is formed by a part of a curved surface forming a spheroid having first and second foci. The first focus is positioned at a target area of the protective film where the excitation light is applied, and the second focus is positioned at a light detecting element included in the photomultiplier tube.