Abstract: A semiconductor device improved in deterioration detection accuracy by using an inductance of a bonding wire. The semiconductor device includes a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern; a second conductor pattern formed on the insulating substrate for sensing the potential of the surface electrode of the semiconductor die device; a first bonding wire for connecting the surface electrode and the first conductor pattern; and a second bonding wire. Further, there is a voltage sensing unit which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and a deterioration detection unit for detecting deterioration of the first bonding wire by using the sensed potential difference.

Abstract: A solid electrolytic capacitor with reduced leakage current is provided. An anode foil dielectric oxide film is formed, a lead terminal which is connected to the anode foil, a capacitor element including the anode foil, is formed in the capacitor element, and a solid electrolyte containing a conductive polymer, and a coating layer for elasticating a conductive polymer forming solution between the anode foil and the lead terminal by forming a solid electrolytic capacitor. Preferably, the coating layer is a solid-state electrolytic capacitor formed at least in the opposite portion of the external leading terminals to the anodal foil.

Abstract: A testing apparatus for measuring a strength of a chip includes: a cassette mounting base on which to mount a cassette capable of accommodating wafer units; a frame fixing mechanism that fixes an annular frame of the wafer unit; a conveying mechanism that conveys the wafer unit between the cassette and the frame fixing mechanism; a pushing-up mechanism that pushes up a predetermined chip included in the wafer supported by the annular frame fixed by the frame fixing mechanism; a pick-up mechanism having a collet picking up the chip pushed up by the pushing-up mechanism; a strength measuring mechanism having a support unit supporting the chip picked up by the collet; and a collet moving mechanism that moves the collect from a position facing the pushing-up mechanism to a position facing the support unit.

Abstract: A measuring apparatus for measuring a flexural strength of a test piece includes a support unit having a first support member and a second support member that are spaced from each other, for supporting a lower surface of the test piece, a presser for pressing the test piece, a moving mechanism for relatively moving the presser toward and away from the test piece supported by the support unit, a load measuring unit for measuring a load applied to the presser when the presser presses the test piece supported by the support unit, and a controller having a calculating section for calculating the flexural strength of the test piece on the basis of a thickness and a width of the test piece, a spacing between the first support member and the second support member, and a maximum value of the load measured by the load measuring unit.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: An imaging unit for an ultrafast imaging apparatus includes an objective lens opposing a workpiece supported on a chuck table, a beam splitter disposed in a first optical path extending from the objective lens, an image processing unit disposed in a second optical path extending from the beam splitter, and an illumination unit disposed in a third optical path extending from the beam splitter. The illumination unit includes a broadband pulsed light source, and a spectrometer configured to divide a single pulse of light, which has been emitted from the broadband pulsed light source, into a plurality of wavelengths and to produce a time lag between each two adjacent ones of the plurality of wavelengths.

Abstract: A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Abstract: A semiconductor device improved in deterioration detection accuracy by using an inductance of a bonding wire. The semiconductor device includes a first conductor pattern formed on the insulating substrate, the main current of the semiconductor die device flowing through the first conductor pattern; a second conductor pattern formed on the insulating substrate for sensing the potential of the surface electrode of the semiconductor die device; a first bonding wire for connecting the surface electrode and the first conductor pattern; and a second bonding wire. Further, there is a voltage sensing unit which is connected to the first conductor pattern and the second conductor pattern to sense a potential difference between the first conductor pattern and the second conductor pattern at the time of switching of the semiconductor die device; and a deterioration detection unit for detecting deterioration of the first bonding wire by using the sensed potential difference.

Abstract: A measuring apparatus for measuring a flexural strength of a test piece includes a support unit having a first support member and a second support member that are spaced from each other, for supporting a lower surface of the test piece, a presser for pressing the test piece, a moving mechanism for relatively moving the presser toward and away from the test piece supported by the support unit, a load measuring unit for measuring a load applied to the presser when the presser presses the test piece supported by the support unit, and a controller having a calculating section for calculating the flexural strength of the test piece on the basis of a thickness and a width of the test piece, a spacing between the first support member and the second support member, and a maximum value of the load measured by the load measuring unit.

Abstract: An imaging unit for an ultrafast imaging apparatus includes an objective lens opposing a workpiece supported on a chuck table, a beam splitter disposed in a first optical path extending from the objective lens, an image processing unit disposed in a second optical path extending from the beam splitter, and an illumination unit disposed in a third optical path extending from the beam splitter. The illumination unit includes a broadband pulsed light source, and a spectrometer configured to divide a single pulse of light, which has been emitted from the broadband pulsed light source, into a plurality of wavelengths and to produce a time lag between each two adjacent ones of the plurality of wavelengths.

Abstract: A testing apparatus for measuring a strength of a chip includes: a cassette mounting base on which to mount a cassette capable of accommodating wafer units; a frame fixing mechanism that fixes an annular frame of the wafer unit; a conveying mechanism that conveys the wafer unit between the cassette and the frame fixing mechanism; a pushing-up mechanism that pushes up a predetermined chip included in the wafer supported by the annular frame fixed by the frame fixing mechanism; a pick-up mechanism having a collet picking up the chip pushed up by the pushing-up mechanism; a strength measuring mechanism having a support unit supporting the chip picked up by the collet; and a collet moving mechanism that moves the collect from a position facing the pushing-up mechanism to a position facing the support unit.

Abstract: A method of detecting a Facet region includes: a fluorescence luminance detecting step of detecting fluorescence luminance unique to SiC by irradiating a SiC ingot with exciting light having a predetermined wavelength from a top surface of the SiC ingot; and a coordinate setting step of setting a region in which the fluorescence luminance is equal to or higher than a predetermined value in the fluorescence luminance detecting step as a non-Facet region, setting a region in which the fluorescence luminance is lower than the predetermined value in the fluorescence luminance detecting step as a Facet region, and setting coordinates of a boundary between the Facet region and the non-Facet region.

Abstract: A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

Abstract: A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Abstract: A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

Abstract: A fluorescence detecting apparatus includes an excitation light applying section that applies excitation light to a protective film containing an absorbing agent. A photomultiplier tube detects fluorescence emitted from the absorbing agent due to absorption of the excitation light. A fluorescence passing filter removes light having wavelengths other than the wavelength of the fluorescence emitted from the absorbing agent, and a reflecting mirror having a reflecting surface reflects the fluorescence emitted from the protective film toward the photomultiplier tube. This reflecting surface is formed by a part of a curved surface forming a spheroid having first and second foci. The first focus is positioned at a target area of the protective film where the excitation light is applied, and the second focus is positioned at a light detecting element included in the photomultiplier tube.

Abstract: A method detects whether or not a workpiece is coated with a water-soluble protective film. The method includes a preparatory step before detection and a detecting step. The preparatory step includes irradiating with infrared light a first region coated with the water-soluble protective film and a second region not coated with the water-soluble protective film for a reference, receiving the reflected light, and thereby acquiring an intensity of reflection from the first region and an intensity of reflection from the second region; and a threshold determining step of determining a threshold from the intensity of reflection from the first region and the intensity of reflection from the second region at a wavenumber of 3000 cm?1 to 3600 cm?1. The detecting step includes irradiating a surface of the workpiece with the infrared light, receiving the reflected light, and comparing the thus obtained intensity of reflection with the threshold.

Abstract: A wafer inspection method includes a step of picking up an image of a processed face of a wafer, a step of extracting a pixel having a pixel value higher than those of peripheral pixels as a characteristic point from among pixels in each predetermined region of picked up image data to create a first image, and a step of extracting a pixel having a pixel value lower than those of peripheral pixels as a characteristic point from among the pixels in each predetermined region of the picked up image data to create a second image. The first and second images are used to inspect the processed face of the wafer.

Abstract: A laser processing apparatus includes a laser beam applying unit having a processing head for applying a laser beam to a workpiece held on a chuck table, a moving unit for relatively moving the chuck table and the laser beam applying unit, a controller for controlling the laser beam applying unit and the moving unit, an input unit for inputting a desired processing result, and a three-dimensional imaging unit for imaging a processed condition of the workpiece held on the chuck table to form a three-dimensional image. The controller adjusts processing conditions so as to obtain the desired processing result input by the input unit according to the desired processing result and the three-dimensional image formed by the three-dimensional imaging unit, and then controls the laser beam applying unit and the moving unit according to the processing conditions adjusted in the processing conditions adjusting step.