Patents by Inventor Yusaku Sugimori

Yusaku Sugimori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11910117
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: February 20, 2024
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yusaku Sugimori
  • Publication number: 20230317750
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.
    Type: Application
    Filed: June 1, 2023
    Publication date: October 5, 2023
    Inventors: Taiichiro WATANABE, Fumihiko KOGA, Kyosuke ITO, Hideaki TOGASHI, Yusaku SUGIMORI
  • Patent number: 11670659
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: June 6, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Taiichiro Watanabe, Fumihiko Koga, Kyosuke Ito, Hideaki Togashi, Yusaku Sugimori
  • Publication number: 20220345654
    Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example.
    Type: Application
    Filed: September 18, 2020
    Publication date: October 27, 2022
    Inventor: YUSAKU SUGIMORI
  • Publication number: 20210288092
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.
    Type: Application
    Filed: June 21, 2018
    Publication date: September 16, 2021
    Inventors: Taiichiro WATANABE, Fumihiko KOGA, Kyosuke ITO, Hideaki TOGASHI, Yusaku SUGIMORI
  • Patent number: 10841520
    Abstract: A solid-state imaging device and electronic device with improved charge transfer efficiency from a charge storage unit to a charge-voltage conversion unit via a transfer gate are disclosed. In one example, the solid-state imaging device is configured so that, before an A/D conversion operation for signal level acquisition, a switching unit switches a state to the LG state at least once and to the HG state at least once. A transfer unit is configured to transfer the charge stored in the charge storage unit to the charge-voltage conversion unit at least twice when the state is being switched to the LG state and when the state is being switched to the HG state. A charge-voltage conversion unit adds the charge that is transferred for the LG state and the HG state and convert the added charge into a voltage signal.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: November 17, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Takafumi Takatsuka, Yusaku Sugimori
  • Publication number: 20200053309
    Abstract: A solid-state imaging device and electronic device with improved charge transfer efficiency from a charge storage unit to a charge-voltage conversion unit via a transfer gate are disclosed. In one example, the solid-state imaging device is configured so that, before an A/D conversion operation for signal level acquisition, a switching unit switches a state to the LG state at least once and to the HG state at least once. A transfer unit is configured to transfer the charge stored in the charge storage unit to the charge-voltage conversion unit at least twice when the state is being switched to the LG state and when the state is being switched to the HG state. A charge-voltage conversion unit adds the charge that is transferred for the LG state and the HG state and convert the added charge into a voltage signal.
    Type: Application
    Filed: April 12, 2018
    Publication date: February 13, 2020
    Inventors: Takafumi Takatsuka, Yusaku Sugimori