Patents by Inventor Yu-Sang Lin

Yu-Sang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for measuring a capacitance of a conductor
    Patent number: 6856143
    Abstract: A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.
    Type: Grant
    Filed: June 14, 2002
    Date of Patent: February 15, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Michael J. McNutt, Robin C. Sarma, Yu-Sang Lin
  • System and method for using a capacitance measurement to monitor the manufacture of a semiconductor
    Patent number: 6788074
    Abstract: A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.
    Type: Grant
    Filed: June 21, 2002
    Date of Patent: September 7, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Robin C. Sarma, Michael J. McNutt, Yu-Sang Lin
  • System and method for using a capacitance measurement to monitor the manufacture of a semiconductor
    Publication number: 20030234655
    Abstract: A method for measuring a capacitance of a semiconductor is provided that includes positioning a measurement circuit in a scribe line area associated with the semiconductor. The scribe line area is indicative of a delineation that separates one or more portions of the semiconductor. A capacitance of one or more elements included within the one or more portions of the semiconductor is then measured using the measurement circuit. The method also includes comparing the capacitance measurement of the one or more elements included within the one or more portions of the semiconductor to a reference set of capacitance values such that a parameter associated with a manufacturing process that generated the semiconductor may be checked.
    Type: Application
    Filed: June 21, 2002
    Publication date: December 25, 2003
    Applicant: Texas Instruments Incorporated
    Inventors: Robin C. Sarma, Michael J. McNutt, Yu-Sang Lin
  • System and method for measuring a capacitance of a conductor
    Publication number: 20030231025
    Abstract: A method for measuring a capacitance of a device under test is provided that includes selectively charging and discharging a first conductor with a first set of p and n element-pairs in response to a voltage potential applied to the first set of p and n element-pairs. The method further includes selectively charging and discharging a second conductor with a second set of p and n element-pairs in response to a voltage potential applied to the second set of p and n element-pairs. Currents are measured at drains associated with the first set of p element-pairs as the first and second conductors charge and discharge such that a capacitance associated with the first conductor may be determined that is based on the drain currents.
    Type: Application
    Filed: June 14, 2002
    Publication date: December 18, 2003
    Applicant: Texas Instruments Incorporated
    Inventors: Michael J. McNutt, Robin C. Sarma, Yu-Sang Lin