Patents by Inventor Yu-Sheng Wang

Yu-Sheng Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240363409
    Abstract: A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive capping layer is formed to extend into the contact opening. A metal-containing material is plated on the conductive capping layer in a plating solution using electrochemical plating. The metal-containing material has a portion filling the contact opening. The plating solution has a sulfur content lower than about 100 ppm. A planarization is performed on the wafer to remove excess portions of the metal-containing material. A remaining portion of the metal-containing material and a remaining portion of the conductive capping layer in combination form a contact plug.
    Type: Application
    Filed: July 12, 2024
    Publication date: October 31, 2024
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chen-Yuan Kao, Yi-Wei Chiu, Liang-Yueh Ou Yang, Yueh-Ching Pai
  • Publication number: 20240360548
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Application
    Filed: July 11, 2024
    Publication date: October 31, 2024
    Inventors: Chi-Cheng HUNG, Pei-Wen WU, Yu-Sheng WANG, Pei-Shan CHANG
  • Publication number: 20240304725
    Abstract: A method includes forming a first semiconductor fin protruding from a substrate and forming a gate stack over the first semiconductor fin. Forming the gate stack includes depositing a gate dielectric layer over the first semiconductor fin, depositing a first seed layer over the gate dielectric layer, depositing a second seed layer over the first seed layer, wherein the second seed layer has a different structure than the first seed layer, and depositing a conductive layer over the second seed layer, wherein the first seed layer, the second seed layer, and the conductive layer include the same conductive material. The method also includes forming source and drain regions adjacent the gate stack.
    Type: Application
    Filed: May 21, 2024
    Publication date: September 12, 2024
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Chung-Chiang Wu, Ching-Hwanq Su
  • Patent number: 12065731
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: August 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng Hung, Pei-Wen Wu, Yu-Sheng Wang, Pei-Shan Chang
  • Patent number: 12068197
    Abstract: A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive capping layer is formed to extend into the contact opening. A metal-containing material is plated on the conductive capping layer in a plating solution using electrochemical plating. The metal-containing material has a portion filling the contact opening. The plating solution has a sulfur content lower than about 100 ppm. A planarization is performed on the wafer to remove excess portions of the metal-containing material. A remaining portion of the metal-containing material and a remaining portion of the conductive capping layer in combination form a contact plug.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: August 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chen-Yuan Kao, Yi-Wei Chiu, Liang-Yueh Ou Yang, Yueh-Ching Pai
  • Publication number: 20240249977
    Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.
    Type: Application
    Filed: February 21, 2024
    Publication date: July 25, 2024
    Inventors: Pei-Wen WU, Chun-I TSAI, Chi-Cheng HUNG, Jyh-Cherng SHEU, Yu-Sheng WANG, Ming-Hsing TSAI
  • Patent number: 12021147
    Abstract: A method includes forming a first semiconductor fin protruding from a substrate and forming a gate stack over the first semiconductor fin. Forming the gate stack includes depositing a gate dielectric layer over the first semiconductor fin, depositing a first seed layer over the gate dielectric layer, depositing a second seed layer over the first seed layer, wherein the second seed layer has a different structure than the first seed layer, and depositing a conductive layer over the second seed layer, wherein the first seed layer, the second seed layer, and the conductive layer include the same conductive material. The method also includes forming source and drain regions adjacent the gate stack.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: June 25, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Chung-Chiang Wu, Ching-Hwanq Su
  • Patent number: 11961768
    Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ya-Wen Chiu, Da-Yuan Lee, Hsien-Ming Lee, Kai-Cyuan Yang, Yu-Sheng Wang, Chih-Hsiang Fan, Kun-Wa Kuok
  • Patent number: 11955379
    Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Wen Wu, Chun-I Tsai, Chi-Cheng Hung, Jyh-Cherng Sheu, Yu-Sheng Wang, Ming-Hsing Tsai
  • Publication number: 20230274983
    Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.
    Type: Application
    Filed: May 5, 2023
    Publication date: August 31, 2023
    Inventors: Ya-Wen Chiu, Da-Yuan Lee, Hsien-Ming Lee, Kai-Cyuan Yang, Yu-Sheng Wang, Chih-Hsiang Fan, Kun-Wa Kuok
  • Publication number: 20230268402
    Abstract: A semiconductor device includes a source/drain region, a silicide region, a source/drain contact, and a silicon-containing dielectric liner. The source/drain region is in a substrate. The silicide region is embedded in the source/drain region. The source/drain contact is over the silicide region. The silicon-containing dielectric liner surrounds the source/drain contact. The source/drain region is in contact with an outer sidewall of the silicon-containing dielectric liner but separated from a bottom surface of the silicon-containing dielectric liner by the silicide region.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Cheng HUNG, Kei-Wei CHEN, Yu-Sheng WANG, Ming-Ching CHUNG, Chia-Yang WU
  • Patent number: 11682589
    Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ya-Wen Chiu, Da-Yuan Lee, Hsien-Ming Lee, Kai-Cyuan Yang, Yu-Sheng Wang, Chih-Hsiang Fan, Kun-Wa Kuok
  • Patent number: 11670690
    Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first source/drain region, a second source/drain region, first source/drain contact and a first dielectric spacer liner. The gate structure is over the semiconductor substrate. The first source/drain region and the second source/drain region are in the semiconductor substrate and respectively on opposite sides of the gate structure. The first source/drain contact is over the first source/drain region. The first dielectric spacer liner lines a sidewall of the first source/drain contact and extends into the first source/drain region.
    Type: Grant
    Filed: July 11, 2020
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Cheng Hung, Kei-Wei Chen, Yu-Sheng Wang, Ming-Ching Chung, Chia-Yang Wu
  • Publication number: 20230133618
    Abstract: An online signature system, method, and an electronic apparatus are provided. Through a remote conference server, an electronic apparatus and another electronic apparatus perform a remote communication procedure. In a process of performing the remote communication procedure, a signature task is transmitted to the electronic apparatus through the remote conference server. The electronic apparatus is connected to an electronic signature server based on the signature task, and displays an assignment file transmitted by the electronic signature server on a display. In response to receiving a signature object associated with the assignment file, the signature object is transmitted to the electronic signature server, so that the electronic signature server combines the signature object with the assignment file to obtain a signed file.
    Type: Application
    Filed: October 27, 2022
    Publication date: May 4, 2023
    Applicant: KDAN MOBILE SOFTWARE LTD.
    Inventors: Chang-Zhou Tsai, Yu-Sheng Wang, Nan-Kuang Lee
  • Publication number: 20230107945
    Abstract: A method includes forming a first semiconductor fin protruding from a substrate and forming a gate stack over the first semiconductor fin. Forming the gate stack includes depositing a gate dielectric layer over the first semiconductor fin, depositing a first seed layer over the gate dielectric layer, depositing a second seed layer over the first seed layer, wherein the second seed layer has a different structure than the first seed layer, and depositing a conductive layer over the second seed layer, wherein the first seed layer, the second seed layer, and the conductive layer include the same conductive material. The method also includes forming source and drain regions adjacent the gate stack.
    Type: Application
    Filed: December 12, 2022
    Publication date: April 6, 2023
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Chung-Chiang Wu, Ching-Hwanq Su
  • Patent number: 11616132
    Abstract: A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: March 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Ching-Hwanq Su
  • Patent number: 11563120
    Abstract: A method includes forming a first semiconductor fin protruding from a substrate and forming a gate stack over the first semiconductor fin. Forming the gate stack includes depositing a gate dielectric layer over the first semiconductor fin, depositing a first seed layer over the gate dielectric layer, depositing a second seed layer over the first seed layer, wherein the second seed layer has a different structure than the first seed layer, and depositing a conductive layer over the second seed layer, wherein the first seed layer, the second seed layer, and the conductive layer include the same conductive material. The method also includes forming source and drain regions adjacent the gate stack.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: January 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Chung-Chiang Wu, Ching-Hwanq Su
  • Publication number: 20220228257
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Application
    Filed: January 21, 2021
    Publication date: July 21, 2022
    Inventors: Chi-Cheng HUNG, Pei-Wen WU, Yu-Sheng WANG, Pei-Shan CHANG
  • Publication number: 20220084879
    Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.
    Type: Application
    Filed: September 15, 2020
    Publication date: March 17, 2022
    Inventors: Pei-Wen WU, Chun-I TSAI, Chi-Cheng HUNG, Jyh-Cherng SHEU, Yu-Sheng WANG, Ming-Hsing TSAI
  • Patent number: 11271103
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate; forming a gate structure on the substrate; depositing a first dielectric layer over the gate structure; depositing a conductive interconnect in a trench of the first dielectric layer thereby exposing a surface of the conductive interconnect through the first dielectric layer; depositing a conductive layer over the exposed surface of the conductive interconnect; depositing a silicon-containing layer over the conductive layer and the conductive interconnect; and forming a metal silicide layer to be a silicide form of the conductive layer by reacting the conductive layer with silicon in the silicon-containing layer.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Pohan Kung, Ying-Jing Lu, Chi-Cheng Hung, Yu-Sheng Wang, Shiu-Ko Jangjian