Abstract: The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction. The present invention uses a silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % silicon carbide, said silicon carbide being formed from an assembly of fibers each having a thickness of 150 ?m or less and a length of 0.8 to 3.5 mm. The present invention is directed to a process for manufacturing a silicon/silicon carbide composite which comprises a first step where cellulose fibers with a fiber thickness of 150 ?m or less is heated at a temperature of 500° C. to 1500° C.

Abstract: A method for producing a Si—SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for producing a Si—SiC member for heat treatment of semiconductor capable of reducing the contamination of the semiconductor wafer as much as possible and causing no slip is provided. This method comprises the first step of kneading a SiC powder having a total metal impurity quantity of 0.2 ppm or less with a molding assistant; the second step of forming a compact from the kneaded raw material; the third step of calcining the compact; the fourth step of purifying the calcined body; and the fifth step of impregnating the purified body with silicon within a sealed vessel provided in a heating furnace body.

Abstract: The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction.

Abstract: A batch-operated furnace apparatus for manufacturing powdered silicon nitride comprises a reaction furnace having a reaction chamber, an upper portion, a bottom portion and a side portion, a feed pipe placed at the upper portion of the reaction furnace for feeding starting materials in a fine or coarse particle form, an exhaust pipe placed at the upper portion of the reaction furnace for removing gasses from the reaction chamber, a gas distributor plate positioned at the bottom portion of the reaction chamber for introducing nitrogen gas into the reaction chamber so as to form a fluidized bed at the bottom portion of the reaction chamber, a heater for heating the starting materials of the fluidized bed within the reaction chamber, a discharge port formed in the gas distributor plate, a discharge pipe joined to the discharge port of the gas distributor plate, a valve seat formed at the discharge port, a discharge valve means having the valve which engages the valve seat of the discharge port, and a guide tube