Patents by Inventor Yushi MATSUMURA
Yushi MATSUMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11921004Abstract: A linear motion drive device including a ball screw, a linear motion table driven by the ball screw to move linearly, and an abnormality detection device configured to detect a decrease in a preload applied to the ball screw. The abnormality detection device includes a vibration sensor configured to measure vibration during operation of the ball screw, a calculation processing unit configured to acquire a vibration value of a vibration signal in a specific frequency band among vibration signals measured by the vibration sensor, and an abnormality detection unit configured to determine that a decrease in the preload has occurred in the ball screw when the vibration value is less than a previously determined threshold with respect to a reference value, the reference value being a vibration value in an initial stage of the operation of the ball screw or during a normal operation of the ball screw.Type: GrantFiled: October 16, 2019Date of Patent: March 5, 2024Assignee: NSK LTD.Inventors: Keisuke Matsumura, Yushi Ootani, Satoshi Hashimoto
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Patent number: 9329478Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.Type: GrantFiled: January 11, 2013Date of Patent: May 3, 2016Assignee: JSR CORPORATIONInventors: Yusuke Anno, Takashi Mori, Satoshi Dei, Kazunori Takanashi, Yushi Matsumura, Shin-ya Minegishi
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Patent number: 9046769Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: September 4, 2014Date of Patent: June 2, 2015Assignee: JSR CORPORATIONInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 9029069Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: GrantFiled: March 29, 2012Date of Patent: May 12, 2015Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20140371466Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Applicant: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8871432Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).Type: GrantFiled: March 28, 2013Date of Patent: October 28, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Satoru Murakami, Yushi Matsumura, Kazuhiko Komura, Yoshio Takimoto, Shin-ya Nakafuji, Kyoyu Yasuda
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Patent number: 8859185Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: GrantFiled: July 22, 2013Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Patent number: 8859191Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: May 8, 2012Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20130310514Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: ApplicationFiled: July 22, 2013Publication date: November 21, 2013Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA
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Patent number: 8513133Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: GrantFiled: August 30, 2011Date of Patent: August 20, 2013Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120285929Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: May 8, 2012Publication date: November 15, 2012Applicant: JSR CorporationInventors: Yushi MATSUMURA, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20120270157Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: ApplicationFiled: March 29, 2012Publication date: October 25, 2012Applicant: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120252217Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2 ??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: ApplicationFiled: August 30, 2011Publication date: October 4, 2012Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA