Patents by Inventor Yusuke ANNO
Yusuke ANNO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190155162Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to fort i a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.Type: ApplicationFiled: January 18, 2019Publication date: May 23, 2019Applicant: JSR CORPORATIONInventors: Kanako MEYA, Yusuke ANNO, Ken MARUYAMA, Shuto MORI
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Patent number: 10216090Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.Type: GrantFiled: March 28, 2016Date of Patent: February 26, 2019Assignee: JSR CORPORATIONInventors: Kanako Meya, Yusuke Anno, Ken Maruyama, Shuto Mori
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Publication number: 20190025699Abstract: A film-forming material for a resist process includes: a siloxane polymer component including at least two selected from the group consisting of a sulfur atom, a nitrogen atom, a boron atom and a phosphorus atom; and organic solvent. The siloxane polymer component preferably has a formulation represented by formula (1). R1 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom. R2 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom, a hydrogen atom, a hydroxy group, or a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms. A pattern-forming method includes: applying the film-forming material for a resist process onto a substrate to form a silicon-containing film; forming a pattern using the silicon-containing film as a mask; and removing the silicon-containing film.Type: ApplicationFiled: September 26, 2018Publication date: January 24, 2019Applicant: JSR CORPORATIONInventors: Junya Suzuki, Tomoaki Seko, Yusuke Anno
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Patent number: 10025188Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: GrantFiled: February 23, 2017Date of Patent: July 17, 2018Assignee: JSR CORPORATIONInventors: Yusuke Anno, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Publication number: 20170322492Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: February 23, 2017Publication date: November 9, 2017Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Publication number: 20160320705Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: July 14, 2016Publication date: November 3, 2016Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
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Publication number: 20160291462Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.Type: ApplicationFiled: March 28, 2016Publication date: October 6, 2016Applicant: JSR CORPORATIONInventors: Kanako MEYA, Yusuke ANNO, Ken MARUYAMA, Shuto MORI
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Patent number: 9329478Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.Type: GrantFiled: January 11, 2013Date of Patent: May 3, 2016Assignee: JSR CORPORATIONInventors: Yusuke Anno, Takashi Mori, Satoshi Dei, Kazunori Takanashi, Yushi Matsumura, Shin-ya Minegishi
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Publication number: 20160097978Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: October 7, 2015Publication date: April 7, 2016Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
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Publication number: 20150160556Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: February 20, 2015Publication date: June 11, 2015Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
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Patent number: 9046769Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: September 4, 2014Date of Patent: June 2, 2015Assignee: JSR CORPORATIONInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8993223Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: GrantFiled: January 17, 2014Date of Patent: March 31, 2015Assignee: JSR CorporationInventors: Yusuke Anno, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Publication number: 20150050600Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: January 17, 2014Publication date: February 19, 2015Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
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Publication number: 20140371466Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Applicant: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8859191Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: May 8, 2012Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20140134544Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: January 17, 2014Publication date: May 15, 2014Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
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Patent number: 8669042Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: GrantFiled: March 30, 2012Date of Patent: March 11, 2014Assignee: JSR CorporationInventors: Yusuke Anno, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Patent number: 8501385Abstract: A positive-tone radiation-sensitive composition is used in a resist pattern-forming method as a first positive-tone radiation-sensitive composition. A positive-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer includes an acid-labile group and a crosslinkable group. The resist pattern-forming method includes providing the first positive-tone radiation-sensitive composition on a substrate to form a first resist pattern on the substrate. The first resist pattern is made to be inactive to light or heat so that the first resist pattern is insoluble in a second positive-tone radiation-sensitive composition. The second positive-tone radiation-sensitive composition is provided on the substrate to form a second resist pattern on the substrate on which the first resist pattern is formed.Type: GrantFiled: January 13, 2011Date of Patent: August 6, 2013Assignee: JSR CorporationInventors: Yusuke Anno, Kouichi Fujiwara, Makoto Sugiura, Gouji Wakamatsu
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Publication number: 20120285929Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: May 8, 2012Publication date: November 15, 2012Applicant: JSR CorporationInventors: Yushi MATSUMURA, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20120183908Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: March 30, 2012Publication date: July 19, 2012Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi