Abstract: A semiconductor device includes a second deep layer between a first deep layer and first current distribution layer and a base region in an active region and in a part of an inactive region adjacent to the active region. The second deep layer has a second stripe portion including lines connecting to the base region and the first deep layer. The semiconductor device further includes a second current distribution layer between the first current distribution layer and the base region and arranged between the lines of the second stripe portion. The first deep layer has a first stripe portion including a plurality of lines, and each line has an end portion connecting to a frame-shaped portion and an inner portion on an inner side of the end portion. The width of the end portion is equal to or greater than the inner portion.

Abstract: An electronic component including a component body, and an external electrode on a surface of the component body. The external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table, the at least one second metal has a melting point higher than that of the at least one first metal. In the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, at least one first portion has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion has the concentration of the at least one second metal decreasing in the thickness direction.

Abstract: An electronic component including a component body, and an external electrode on a surface of the component body. The external electrode includes a layer having an alloy of at least one first metal and at least one second metal, the at least one first metal is selected from the group consisting of metals of Group 9 to Group 11 of the Periodic Table, the at least one second metal has a melting point higher than that of the at least one first metal. In the layer having the alloy, a concentration of the at least one second metal continuously changes in a thickness direction of the external electrode, at least one first portion has the concentration of the at least one second metal increasing in the thickness direction, and at least one second portion has the concentration of the at least one second metal decreasing in the thickness direction.

Abstract: A ceramic electronic component includes a ceramic body having first and second end surfaces facing each other, first and second side surfaces facing each other, first and second principal surfaces facing each other, and also includes outer electrodes each of which is provided on at least one portion of a corresponding one of the first and second end surfaces of the ceramic body. Each of the outer electrodes includes an underlying electrode layer provided on at least one portion of a corresponding one of the first and second end surfaces of the ceramic body and also includes a plating layer provided on a corresponding one of the underlying electrode layers and on a corresponding one of regions different from the underlying electrode layers.

Abstract: A ceramic electronic component includes a ceramic body having first and second end surfaces facing each other, first and second side surfaces facing each other, first and second principal surfaces facing each other, and also includes outer electrodes each of which is provided on at least one portion of a corresponding one of the first and second end surfaces of the ceramic body. Each of the outer electrodes includes an underlying electrode layer provided on at least one portion of a corresponding one of the first and second end surfaces of the ceramic body and also includes a plating layer provided on a corresponding one of the underlying electrode layers and on a corresponding one of regions different from the underlying electrode layers.