Abstract: A conductive composition for electrode formation contains an organometallic compound containing a metal element, and an organic solvent. The conductive composition is substantially free of metal particles.

Abstract: A laser diode (2) and a modulator (3) are provided on a semiconductor substrate (1). A modulator (3) has a modulator electrode (8) and modulates laser light emitted from the laser diode (2). A plurality of lead-out electrodes (9) are led out from the modulator electrode (8). A plurality of electrode pads (10) respectively faces the plurality of lead-out electrodes (9). A gap (11) is provided between the lead-out electrode (9) and the electrode pad (10) facing each other.

Abstract: A conductive paste for electrode formation contains metal particles, a binder, a metal oxide additive, and a solvent. The metal oxide additive includes a metal oxide having, in an Ellingham diagram, a higher level of standard Gibbs energy of formation than carbon dioxide or carbon monoxide at a temperature of 500 to 1000° C.

Abstract: The present invention provides an artificial TRAP-cage comprising a selected number of TRAP rings and encapsulated therein a guest cargo.

Abstract: The present invention provides an artificial TRAP-cage decorated with particular molecules (proteins, peptides, small molecules, nucleic acids) on the exterior.

Abstract: The present invention provides an artificial TRAP-cage comprising a selected number of TRAP rings which are held in place by cross-linkers, wherein the cross-linkers are selected for their specific characteristics whereby the cages are programmable to be opened or remain closed on demand, under specific conditions.

Abstract: A semiconductor optical integrated element of the present disclosure includes: a laser diode portion which is provided on one end side above a substrate, has a first optical waveguide, and emits a laser beam; a modulator portion which is provided on another end side, has a second optical waveguide, and modulates the laser beam; a separation region provided between the laser diode portion and the modulator portion; and a pair of grooves provided on both sides along the first optical waveguide and the second optical waveguide. The second optical waveguide in the separation region and the second optical waveguide in a part on the separation region side in the modulator portion have a buried structure, and the second optical waveguide in a remaining part in the modulator portion has a high-mesa-ridge structure.

Abstract: The capacitor includes a dielectric body portion including ceramic layers and internal-electrode layers laminated in an alternating manner, and a cover portion provided in a periphery of the dielectric body portion. The cover portion includes pores. A part of the cover portion located in a position in a direction perpendicular to a lamination direction of the ceramic layers and the internal-electrode layers is a side surface cover portion. When the side surface cover portion is divided into three equal regions in a width direction, the regions being a dielectric body portion-side region, a central region, and a surface-side region, the number of the pores is higher in the dielectric body portion-side region than in the central region and the surface-side region.

Abstract: The capacitor includes a dielectric body portion including ceramic layers and internal-electrode layers laminated in an alternating manner, and a cover portion provided in a periphery of the dielectric body portion. The cover portion includes pores. A part of the cover portion located in a position in a direction perpendicular to a lamination direction of the ceramic layers and the internal-electrode layers is a side surface cover portion. When the side surface cover portion is divided into three equal regions in a width direction, the regions being a dielectric body portion-side region, a central region, and a surface-side region, the number of the pores is higher in the dielectric body portion-side region than in the central region and the surface-side region.

Abstract: An optical semiconductor device includes: a resonator end face; an optical waveguide; a window structure located between the resonator end face and the optical waveguide; and a vernier on the window structure and allowing measurement of length of the window structure along an optical axis direction.

Abstract: A semiconductor optical element and an optical module in which extinction ratio variation among integrated optical modulation elements is reduced. An optical module has a wavelength multiplexer that multiplexes light respectively emerging from electric-field-absorption modulator (EAM) portions of integrated optical modulation elements, and that outputs the multiplexed light. The integrated optical modulation element has a signal input terminal, a laser element portion, and an EAM portion. Each of the integrated optical modulation elements has a difference between an oscillation wavelength and a barrier layer bandgap wavelength, represented as an LDBG wavelength difference. Variation of the LDBG wavelength differences is limited within a range of ±1 nm.

Abstract: An optical semiconductor device includes: a resonator end face; an optical waveguide; a window structure located between the resonator end face and the optical waveguide; and a vernier on the window structure and allowing measurement of length of the window structure along an optical axis direction.

Abstract: A semiconductor optical element and an optical module in which extinction ratio variation among integrated optical modulation elements is reduced. An optical module has a wavelength multiplexer that multiplexes light respectively emerging from electric-field-absorption modulator (EAM) portions of integrated optical modulation elements, and that outputs the multiplexed light. The integrated optical modulation element has a signal input terminal, a laser element portion, and an EAM portion. Each of the integrated optical modulation elements has a difference between an oscillation wavelength and a barrier layer bandgap wavelength, represented as an LDBG wavelength difference. Variation of the LDBG wavelength differences is limited within a range of ±1 nm.

Abstract: To provide a dielectric ceramics achieving a high insulation resistance even at a low applied voltage, and minimizing insulation resistance drop when the voltage is increased, and also provide a multilayer ceramic capacitor including the dielectric ceramics as a dielectric layer, and having excellent life characteristics in a high temperature load test. The dielectric ceramics has crystal grains composed mainly of barium titanate and containing vanadium, and a grain boundary phase existing between the crystal grains. The dielectric ceramics contains 0.0005 to 0.03 moles of vanadium in terms of V2O5, with respect to 1 mole of barium constituting the barium titanate. In the X-ray diffraction chart of the dielectric ceramics, the diffraction intensity of (004) plane indicating the tetragonal system of barium titanate is larger than the diffraction intensity of (400) plane indicating the cubic system of barium titanate.

Abstract: A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.085 mol of magnesium in terms of MgO, 0.1 to 0.2 mol of the rare-earth element (RE) in terms of RE2O3, and 0.006 to 0.018 mol of manganese in terms of MnO. Such a dielectric ceramic has a high relative dielectric constant, stable temperature characteristic of the relative dielectric constant, and no spontaneous polarization.

Abstract: A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.085 mol of magnesium in terms of MgO, 0.1 to 0.2 mol of the rare-earth element (RE) in terms of RE2O3, and 0.006 to 0.018 mol of manganese in terms of MnO. Such a dielectric ceramic has a high relative dielectric constant, stable temperature characteristic of the relative dielectric constant, and no spontaneous polarization.

Abstract: To provide a dielectric ceramics achieving a high insulation resistance even at a low applied voltage, and minimizing insulation resistance drop when the voltage is increased, and also provide a multilayer ceramic capacitor including the dielectric ceramics as a dielectric layer, and having excellent life characteristics in a high temperature load test. The dielectric ceramics has crystal grains composed mainly of barium titanate and containing vanadium, and a grain boundary phase existing between the crystal grains. The dielectric ceramics contains 0.0005 to 0.03 moles of vanadium in terms of V2O5, with respect to 1 mole of barium constituting the barium titanate. In the X-ray diffraction chart of the dielectric ceramics, the diffraction intensity of (004) plane indicating the tetragonal system of barium titanate is larger than the diffraction intensity of (400) plane indicating the cubic system of barium titanate.