Abstract: A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Abstract: The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, WX)n??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: The present invention provides a method for manufacturing a resist composition which is used in a manufacturing process of a semiconductor apparatus, comprising the steps of: cleaning a manufacturing apparatus for the resist composition with a cleaning solution; analyzing the cleaning solution taken out from the manufacturing apparatus; repeating the step of cleaning and the step of analyzing until a concentration of a nonvolatile component(s) contained in the cleaning solution became 10 ppm or less; and manufacturing the resist composition by using the manufacturing apparatus after the step of repeating. There can be provided a method for manufacturing a resist composition which can manufacture a resist composition lowered in coating defects.

Abstract: The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

Abstract: The present invention provides a thermal crosslinking accelerator that can improve an etching selectivity to the upper layer resist thereby improving the pattern form after etching even in a finer pattern than the case of using a conventional silicon-containing resist underlayer film. Thus, provided is a thermal crosslinking accelerator of a polysiloxane compound wherein the thermal crosslinking accelerator of a polysiloxane compound is shown by the following general formula (A-1), wherein R11, R12, R13, and R14 each represents a hydrogen atom, a halogen atom, a linear, a branched, a cyclic alkyl group or the like having 1 to 20 carbon atoms, an optionally substituted aryl group having 6 to 20 carbon atoms, or an aralkyl group or the like having 7 to 20 carbon atoms, wherein a part of or all of hydrogen atoms in these groups may be substituted by an alkoxy group or the like.

Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, W?X)n ??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

Abstract: A composition for forming a silicon-containing resist under layer film includes a silicon-containing compound which is obtained by hydrolysis, condensation or hydrolysis-condensation of a second silicon compound containing one or more compounds represented by the following general formula (1), wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5?x+z?1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7?x+y+z?1, and the case where (x, y, z)=(1, 1, 1) is not included. The composition forms a resist under layer film with extremely less number of coating defects, and excellent adhesiveness in fine pattern and etching selectivity.

Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

Abstract: The present invention provides a method for producing a resist composition used in a process for producing a semiconductor apparatus, the method including the steps of: cleaning an apparatus for producing the resist composition with a cleaning liquid; applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist composition; repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm2 or less; and producing the resist composition by using the apparatus for producing the resist composition after the step of repeating. There can be provided a method for producing a resist composition capable of producing a resist composition whose coating defects are reduced.

Abstract: Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m2) in an extraction using an organic solvent.

Abstract: A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

Abstract: The present invention provides a method for manufacturing a resist composition which is used in a manufacturing process of a semiconductor apparatus, comprising the steps of: cleaning a manufacturing apparatus for the resist composition with a cleaning solution; analyzing the cleaning solution taken out from the manufacturing apparatus; repeating the step of cleaning and the step of analyzing until a concentration of a nonvolatile component(s) contained in the cleaning solution became 10 ppm or less; and manufacturing the resist composition by using the manufacturing apparatus after the step of repeating. There can be provided a method for manufacturing a resist composition which can manufacture a resist composition lowered in coating defects.

Abstract: A composition for forming a silicon-containing resist under layer film includes a silicon-containing compound which is obtained by hydrolysis, condensation or hydrolysis-condensation of a second silicon compound containing one or more compounds represented by the following general formula (1), wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5?x+z?1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7?x+y+z?1, and the case where (x, y, z)=(1, 1, 1) is not included. The composition forms a resist under layer film with extremely less number of coating defects, and excellent adhesiveness in fine pattern and etching selectivity.

Abstract: The present invention provides a method for producing a resist composition used in a process for producing a semiconductor apparatus, the method including the steps of: cleaning an apparatus for producing the resist composition with a cleaning liquid; applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist composition; repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm2 or less; and producing the resist composition by using the apparatus for producing the resist composition after the step of repeating. There can be provided a method for producing a resist composition capable of producing a resist composition whose coating defects are reduced.

Abstract: Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m2) in an extraction using an organic solvent.

Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.