Patents by Inventor Yusuke Fukada

Yusuke Fukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10802011
    Abstract: In order to evaluate the compatibility of coals used in coke production and to produce cokes with desired strength by blending coals in consideration of the compatibility, the invention provides a technique which evaluates the adhesion strength obtained when two kinds of coals are carbonized based. on properties of the coals. Surface tensions of two kinds of semicokes obtained by heat treating two kinds of coals are measured. Based on the difference between the two measured values of surface tension, the quality of the adhesiveness between the two kinds of coals is evaluated.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: October 13, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Kiyoshi Fukada, Hiroyuki Sumi, Hidekazu Fujimoto, Izumi Shimoyama, Takashi Anyashiki, Tetsuya Yamamoto, Yusuke Dohi
  • Patent number: 10739285
    Abstract: A method for accurately measuring the thermoplasticity of a coal whose thermoplasticity has been difficult to evaluate and determining whether the coal that is to be measured does not significantly reduce the coke strength when used for a coal blend is disclosed. Also disclosed is a method for evaluating a coal used as a raw material for coke and includes using a physical property value relating to a thermoplasticity of a coal as an index for evaluating the coal, wherein a primary or secondary amine including an aromatic ring have been added to the coal, thereby enhancing the thermoplasticity of the coal.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: August 11, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Yusuke Dohi, Kiyoshi Fukada, Takashi Matsui, Mikiya Nagayama, Narumi Nanri, Kazutoshi Hanada
  • Patent number: 10655244
    Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: May 19, 2020
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke Tsukada, Satoru Nagao, Kazunori Kamada, Masayuki Tashiro, Kenji Fujito, Hideo Fujisawa, Yutaka Mikawa, Tetsuharu Kajimoto, Takashi Fukada
  • Publication number: 20190299760
    Abstract: A sunroof apparatus includes a base panel (20) made of aluminum alloy and provided at a peripheral edge portion of an opening (11) formed at a body (10) of a vehicle, a sunroof unit (25) attached to the base panel (20), and a panel (13) arranged above the base panel (20), the panel being connected to the sunroof unit (25).
    Type: Application
    Filed: January 19, 2017
    Publication date: October 3, 2019
    Applicant: AISIN SEIKI KABUSHIKI KAISHA
    Inventors: Ryuta FUKADA, Akinori OSAMURA, Yusuke SATO
  • Publication number: 20190293155
    Abstract: An internal combustion engine, includes: a cylinder block; a crankshaft rotatably supported in the cylinder block; an oil pan fastened to a lower end portion of the cylinder block; a chain case fastened to one end wall of the cylinder block in an axial direction of the crankshaft; a belt wound around a crank pulley provided on an end portion of the crankshaft protruding from the chain case and an accessory pulley provided on an engine accessory; and a tensioner contacting a back surface of the belt and applying a tension to the belt, wherein the tensioner includes multiple fastening portions, such that one of the fastening portions is fastened to at least one of the cylinder block and the chain case, and another one of the fastening portions is fastened to the oil pan.
    Type: Application
    Filed: February 15, 2019
    Publication date: September 26, 2019
    Inventors: Yusuke FUKADA, Naoki HOTTA, Nobuharu TAKAHASHI, Hirokazu WATANABE
  • Patent number: 10414986
    Abstract: A method for manufacturing coke having a high strength and excellent extrusion capability. The method includes a preparing step of blending two or more coal brands to prepare a coal blend, a stirring and mixing step of stirring and mixing the coal blend to disintegrate at least a part of pseudo-particles that have been formed by agglomeration of coal particles in the coal blend, and a carbonizing step of charging the stirred and mixed coal blend into a coke oven to carbonize the stirred and mixed coal blend. Additionally, a mixing apparatus is used in the stirring and mixing step that has a capability of controlling a degree of mixing of the coal blend to be 0.85 or more at 60 seconds after start of a mixing operation. The degree of mixing is calculated by the following equation (1): degree of mixing=(?C0??C)/(?C0??Cf)??(1).
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: September 17, 2019
    Assignee: JFE STEEL CORPORATION
    Inventors: Yusuke Dohi, Yoshiko Maeta, Kazutoshi Hanada, Kiyoshi Fukada, Takashi Matsui, Michio Honma, Masahiro Shinohara
  • Patent number: 10243067
    Abstract: A semiconductor device includes a first semiconductor layer on one main surface of a semiconductor substrate; a plurality of trench gates in the first semiconductor layer extending to reach the inside of the semiconductor substrate; a second semiconductor layer selectively provided in an upper portion of the first semiconductor layer between the trench gates; an isolation layer in contact with a side surface of the second semiconductor layer and extends in the first semiconductor; and a third semiconductor layer in the upper portion of the first semiconductor layer between the trench gates and has at least one side surface in contact with the trench gate. The isolation layer is between and separates the second semiconductor layer and the third semiconductor layer from each other and is formed to extend to the same depth as, or to a position deeper than the second semiconductor layer.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: March 26, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazuya Konishi, Yusuke Fukada, Atsushi Narazaki
  • Patent number: 10176994
    Abstract: A p-type base layer (2) is formed on a surface of an n-type silicon substrate (1). First and second n+-type buffer layers (8,9) 9 are formed on a back surface of the n-type silicon substrate (1). The first n+-type buffer layer (8) is formed by a plurality of implantations of protons at different accelerating voltages and has a plurality of peak concentrations with different depths from the back surface of the n-type silicon substrate (1). The second n+-type buffer layer (9) is formed by an implantation of a phosphorus. A position of a peak concentration of the phosphorus is shallower from the back surface of the n-type silicon substrate (1) than positions of peak concentrations of the protons. The peak concentration of the phosphorus is higher than the peak concentrations of the protons. A concentration of the protons is higher than a concentration of the phosphorus at the positions of the peak concentrations of the protons.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: January 8, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kenji Suzuki, Atsushi Narazaki, Ryu Kamibaba, Yusuke Fukada, Katsumi Nakamura
  • Publication number: 20180204909
    Abstract: Included are a semiconductor substrate, an emitter electrode formed on the semiconductor substrate, a gate electrode formed on the semiconductor substrate, a source layer of a first conductivity type formed on the semiconductor substrate, a base layer of a second conductivity type formed on the semiconductor substrate, a collector electrode formed under the semiconductor substrate, a plurality of active trench gates formed on a top-surface side of the semiconductor substrate and connected to the gate electrode, and a plurality of dummy trench gates formed on the top-surface side of the semiconductor substrate and not connected to the gate electrode. First structures, each including three or more of the active trench gates arranged side by side, and second structures, each including three or more of the dummy trench gates arranged side by side, are alternately provided.
    Type: Application
    Filed: August 26, 2015
    Publication date: July 19, 2018
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kazuya KONISHI, Yusuke FUKADA, Ryu KAMIBABA, Mariko UMEYAMA, Atsushi NARAZAKI, Masayoshi TARUTANI
  • Publication number: 20180019307
    Abstract: A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode (30) on a front surface side of a silicon carbide wafer (10); a step for thinning the silicon carbide wafer (10) by reducing a thickness of the silicon carbide wafer (10) from a back surface side thereof; a step for providing a metal layer (21) on the back surface of the thinned silicon carbide wafer (10); a step for irradiating the metal layer (21) with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer (20) obtained by a reaction with carbon in the silicon carbide wafer (10), on a back surface side of the metal layer (21); and a step for forming a back-surface electrode (40) on a back surface side of the carbide layer (20).
    Type: Application
    Filed: December 11, 2015
    Publication date: January 18, 2018
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Yusuke FUKADA, Yoshiyuki WATANABE
  • Publication number: 20180019131
    Abstract: A p-type base layer (2) is formed on a surface of an n-type silicon substrate (1). First and second n+-type buffer layers (8,9) 9 are formed on a back surface of the n-type silicon substrate (1). The first n+-type buffer layer (8) is formed by a plurality of implantations of protons at different accelerating voltages and has a plurality of peak concentrations with different depths from the back surface of the n-type silicon substrate (1). The second n+-type buffer layer (9) is formed by an implantation of a phosphorus. A position of a peak concentration of the phosphorus is shallower from the back surface of the n-type silicon substrate (1) than positions of peak concentrations of the protons. The peak concentration of the phosphorus is higher than the peak concentrations of the protons. A concentration of the protons is higher than a concentration of the phosphorus at the positions of the peak concentrations of the protons.
    Type: Application
    Filed: March 13, 2015
    Publication date: January 18, 2018
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kenji SUZUKI, Atsushi NARAZAKI, Ryu KAMIBABA, Yusuke FUKADA, Katsumi NAKAMURA
  • Patent number: 9482200
    Abstract: Formed in a pinion (74) are pinion-side helical external teeth (74A) that mesh with a ring gear 823), and pinion-side helical internal teeth (74a) that mesh with a pinion inner (71). Formed in the pinion inner (71) are pinion inner-side helical external teeth (73) that mesh with the pinion-side helical internal teeth (74a). The configuration is formed so that when the rotational speed of the pinion (74) is slower than that of the ring gear (23), a thrust load is generated in a direction toward the ring gear (23), and when the rotational speed of the pinion (74) is faster than that of the ring gear (23), a thrust load is generated in a direction away from the ring gear (23).
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: November 1, 2016
    Assignees: Mitsuba Corporation, Honda Motor Co., Ltd.
    Inventors: Tomohiko Ikemori, Hiroshi Ooka, Masaaki Oya, Masataka Odagiri, Shigehiro Kanbe, Hiroki Yamada, Seiji Shimada, Yusuke Fukada, Takayuki Yamagata, Masahiro Nakamura
  • Patent number: 9188099
    Abstract: A starter includes an output shaft which rotates by a rotary force applied from the motor unit, a housing in which an end of the output shaft is rotatably supported, and an electromagnetic device configured to apply/shut off current to the motor unit, and biases a suppressing force toward the ring gear to the pinion gear through a clutch mechanism, wherein a load receiving member which abuts one end of the output shaft to receive an axial load generated from the output shaft is installed in the housing.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: November 17, 2015
    Assignees: MITSUBA CORPORATION, HONDA MOTOR CO., LTD.
    Inventors: Tomohiko Ikemori, Hiroshi Ooka, Masaaki Oya, Shigehiro Kanbe, Masataka Odagiri, Mitsuhiro Kogure, Hiroki Yamada, Masahiro Nakamura, Seiji Shimada, Yusuke Fukada, Satoshi Sekiguchi
  • Publication number: 20150270378
    Abstract: A semiconductor device includes a first semiconductor layer on one main surface of a semiconductor substrate; a plurality of trench gates in the first semiconductor layer extending to reach the inside of the semiconductor substrate; a second semiconductor layer selectively provided in an upper portion of the first semiconductor layer between the trench gates; an isolation layer in contact with a side surface of the second semiconductor layer and extends in the first semiconductor; and a third semiconductor layer in the upper portion of the first semiconductor layer between the trench gates and has at least one side surface in contact with the trench gate. The isolation layer is between and separates the second semiconductor layer and the third semiconductor layer from each other and is formed to extend to the same depth as, or to a position deeper than the second semiconductor layer.
    Type: Application
    Filed: December 11, 2014
    Publication date: September 24, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kazuya KONISHI, Yusuke FUKADA, Atsushi NARAZAKI
  • Publication number: 20150047594
    Abstract: Formed in a pinion (74) are pinion-side helical external teeth (74A) that mesh with a ring gear 823), and pinion-side helical internal teeth (74a) that mesh with a pinion inner (71). Formed in the pinion inner (71) are pinion inner-side helical external teeth (73) that mesh with the pinion-side helical internal teeth (74a). The configuration is formed so that when the rotational speed of the pinion (74) is slower than that of the ring gear (23), a thrust load is generated in a direction toward the ring gear (23), and when the rotational speed of the pinion (74) is faster than that of the ring gear (23), a thrust load is generated in a direction away from the ring gear (23).
    Type: Application
    Filed: March 30, 2012
    Publication date: February 19, 2015
    Inventors: Tomohiko Ikemori, Hiroshi Ooka, Masaaki Oya, Masataka Odagiri, Shigehiro Kanbe, Hiroki Yamada, Seiji Shimada, Yusuke Fukada, Takayuki Yamagata, Masahiro Nakamura
  • Publication number: 20060131692
    Abstract: An object of the present invention is to provide at a low cost a light emitting device capable of emitting light not only in a visible light region, but also in an ultraviolet ray region and an infrared ray region with a high luminance and, further, capable of being reduced in size. According to the present invention, in the light emitting device (1) in which a light emitting electrode (4) and a cold cathode (3) are disposed opposite to each other, the light emitting electrode (4) is constituted by a metal oxide structure having whiskers (15) of a metal oxide. As for the metal oxide which constitutes the whiskers, it is preferable to use such metal oxide as has a band gap of from 1.5 to 7.7 eV. The light emitting electrode and the cold cathode are disposed within a vacuum chamber or a container having a base body sealed therein.
    Type: Application
    Filed: September 19, 2003
    Publication date: June 22, 2006
    Inventors: Hidetoshi Saitoh, Shigeo Ohshio, Yusuke Fukada