Abstract: A light emitting device in which pixels are arranged is provided. Each of the pixels includes an organic layer including a light emitting layer, a reflective layer arranged between the main surface and the organic layer, a first insulator arranged between the reflective layer and the organic layer, a transmission electrode arranged between the first insulator and the organic layer, and a second insulator arranged so as to cover a peripheral edge portion of the transmission electrode while including an opening portion that exposes a part of the transmission electrode. A groove extending through the first insulator is provided between the peripheral edge portion of the transmission electrode and the reflective layer, the transmission electrode is electrically connected to the reflective layer in the groove, and the second insulator includes a recess portion in a portion covering the groove.

Abstract: A light emitting device in which light emitting elements are arranged on a surface of a substrate is provided. Each of the light emitting elements comprises a light emitting layer, a reflective layer arranged between the light emitting layer and the surface, a first electrode arranged between the reflective layer and the light emitting layer, an optical distance adjustment layer arranged between the reflective layer and the first electrode, an insulating layer covering a peripheral portion of the first electrode and arranged, between two light emitting elements adjacent to each other, between the optical distance adjustment layer and the light emitting layer, and a conductive plug extending from the insulating layer to pass through the optical distance adjustment layer and reach a height of an upper surface of the reflective layer while being in electrical contact with the first electrode.

Abstract: Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.

Abstract: A photo-detection device includes an APD, a current detecting unit to which a signal via a first terminal of the APD is input, a load element connected to a node between the APD and the current detecting unit, a quench signal generating unit to which a signal from the current detecting unit is input and which outputs a quench signal, and a switch connected to a second terminal of the APD and a first wiring line to which first potential is supplied. The node is connected via the load element to a second wiring line to which second potential different from the first potential is supplied, and the quench signal generating unit generates a one-shot pulse signal as the quench signal based on the signal from the current detecting unit and causes the quench signal to be input to the switch.

Abstract: Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.

Abstract: A photo-detection device includes an APD, a current detecting unit to which a signal via a first terminal of the APD is input, a load element connected to a node between the APD and the current detecting unit, a quench signal generating unit to which a signal from the current detecting unit is input and which outputs a quench signal, and a switch connected to a second terminal of the APD and a first wiring line to which first potential is supplied. The node is connected via the load element to a second wiring line to which second potential different from the first potential is supplied, and the quench signal generating unit generates a one-shot pulse signal as the quench signal based on the signal from the current detecting unit and causes the quench signal to be input to the switch.

Abstract: A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.

Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

Abstract: A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.

Abstract: A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon.

Abstract: A plasma treatment apparatus and a method of plasma treatment for reducing generation of Na atoms in the case where a silica glass and the like are used for a member made of dielectric material are provided. The provided plasma treatment apparatus includes a dielectric member having an impurity element forming positive and movable ions, a vacuum chamber partially sealed with the dielectric member, and a radiator radiating electromagnetic wave into the vacuum chamber through the dielectric member to generate plasma in the vacuum chamber and to treat a workpiece using the plasma. The apparatus further includes an electrode on the dielectric member on a surface opposite the surface exposed to the plasma. The generation of Na can be reduced by applying to the plasma a negative DC potential which is lower than a floating potential measured at the surface of the dielectric member exposed to the plasma.

Abstract: A radiofrequency wave electrode that is electrically insulated from a microwave introduction portion is provided, or the microwave introduction portion also functions as a radiofrequency wave electrode, and a radiofrequency wave is superimposed on a microwave for generating plasma. With this feature a plasma having an enhanced intensity is generated even in a portion where otherwise the microwave plasma intensity may be low and reaction product may easily adhere to.

Abstract: In a plasma processing apparatus including a plasma generating chamber, a plasma processing chamber which receives an objective substrate, and a conductance adjusting plate which allows a process gas to pass therethrough and which is provided to separate the above two chamber, the processing apparatus has a cooling unit configured to cool a portion supporting the conductance adjusting plate.

Abstract: A processing apparatus which can precisely control a radical flux over a broad range in radical treatment is provided. A surface of a substrate, such as a semiconductor, is processed with radicals in a treatment chamber. A gas inlet is disposed between a support for supporting the substrate and a radical-generating region where radicals are generated by a radical-forming portion. A first gas outlet is disposed at the side of the radical-generating region with respect to the gas inlet. A second gas outlet is disposed at the side of the support with respect to the gas inlet.

Abstract: The present invention provides a method and apparatus for forming an insulating film having good reliability, in accordance with a process without high-temperature heating. In accordance with the present invention, in a process for forming an insulating film for a semiconductor device by oxidizing a material to be processed, exposed at the surface of a substrate to be processed, in accordance with plasma oxidation method, the plasma processing is carried out by use of at least a gas that contains hydrogen atoms other than H2 and H2O and a gas that contains oxygen atoms other than H2O.

Abstract: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

Abstract: A method for forming an insulating film low in defects, in high throughput and with high reliability includes a first step of oxidizing an article employing a plasma having oxidizing species including ions to form an oxide film having a desired film thickness, and a second step of controlling an amount of the ions in the plasma at a surface of the article to be processed employing neutral radicals.

Abstract: A processing method for forming an insulated film on a surface of a substrate to be processed, through an oxynitriding treatment includes the steps of nitriding a surface of the substrate by irradiating plasma containing nitrogen atoms onto the substrate, and oxidizing the surface of the substrate, which has been nitrided, by irradiating plasma containing oxygen atoms.