Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: By finding a range of an allowable error of maximum meshing position of a worm shaft in an axial direction relative to a worm wheel, that is higher than that of a worm shaft of a conventional worm gear unit, a worm gear unit of the present invention is provided.

Abstract: A performance information monitoring method using computers includes the steps of accepting information on a group relating to a first computer in the first computer; storing the accepted group information in a storage in the first computer; accepting performance information from a second computer in the first computer; comparing performance information of the second computer previously stored in a storage with the performance information received from the second computer in the first computer; judging whether or not the second computer is included in the information of the group when finding a difference between the performance information in the comparison result; and transmitting an instruction to the computer included in the group information to change a performance information collection interval according to the judgment result.

Abstract: The present invention relates to a computer system, more particularly to a computer system for reducing a performance load generated by the operation of a program for obtaining performance information of a storage system. A performance information collecting method executed in a computer system comprising: the performance information collecting method comprises: a first step of obtaining, by the control unit, the performance information of the storage system; a second step of transmitting, by the control unit, the obtained performance information to the host computer having a lower load than a predetermined threshold value; a third step of transmitting, by the host computer, the performance information transmitted from the control unit to the management computer; and a fourth step of collecting, by the management computer the transmitted performance information.

Abstract: A performance information monitoring method using computers includes the steps of accepting information on a group relating to a first computer in the first computer; storing the accepted group information in a storage in the first computer; accepting performance information from a second computer in the first computer; comparing performance information of the second computer previously stored in a storage with the performance information received from the second computer in the first computer; judging whether or not the second computer is included in the information of the group when finding a difference between the performance information in the comparison result; and transmitting an instruction to the computer included in the group information to change a performance information collection interval according to the judgment result.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: A performance information monitoring method using computers includes the steps of accepting information on a group relating to a first computer in the first computer; storing the accepted group information in a storage in the first computer; accepting performance information from a second computer in the first computer; comparing performance information of the second computer previously stored in a storage with the performance information received from the second computer in the first computer; judging whether or not the second computer is included in the information of the group when finding a difference between the performance information in the comparison result; and transmitting an instruction to the computer included in the group information to change a performance information collection interval according to the judgment result.