Abstract: A thin-film solar battery module comprising: a plurality of thin-film solar batteries; a supporting plate; and a frame, the thin-film solar battery having a string in which a plurality of thin-film photoelectric conversion elements, each formed by sequentially stacking a first electrode layer, a photoelectric conversion layer and a second electrode layer on a surface of an insulated substrate, are electrically connected in series, wherein the frame is attached to an outer circumference of the supporting plate in a condition that the plurality of thin-film solar batteries are arranged and fixed on the supporting plate.

Abstract: A gateway device includes a base processor which converts a signal input from an IP network to a signal which can be handled by the gateway device, and a home appliance control processor having a controller which converts the signal which can be handled by the gateway device to a control signal in compliance with the communications protocol of a home appliance to be controlled. The controller stores, on a table, information about the communications protocol, driver, controllable setting condition and status of respective appliances to be controlled in association with each other. The controller also includes a conversion functional block which converts information supplied to the control information of the communications protocol of the respective appliances to be controlled on the basis of the stored information.

Abstract: A plasma processing apparatus characterized by comprising within a sealable chamber: an internal structural body that is disposed to be spaced apart from an inner wall surface of the chamber and that forms an inside space for housing a substrate serving as an object of processing; a substrate holding section that houses the substrate within the inside space; reactive gas supplying means for supplying a reactive gas to the inside space; a cathode and an anode that are supported by the internal structural body and disposed on both sides of the substrate within the inside space and that generate plasma discharge of the reactive gas; a heater that is supported by the internal structural body and that heats the substrate within the inside space; and heat-dissipating means capable of dissipating a Joule heat generated by the plasma discharge to outside of the inside space.

Abstract: A semiconductor manufacturing apparatus comprising: a plurality of vacuum chambers corresponding to a plurality of processing sections necessary for manufacturing a semiconductor device; an exhaust device connected to each vacuum chamber; a plate shaped guide plate arranged at the bottom of each vacuum chamber and having a plurality of gas emission holes; and a gas supply source for supplying gas to the gas emission holes, wherein the plurality of vacuum chambers are adjacent to each other by way of a shutter, one of the two adjacent vacuum chambers includes a tray mounted on the guide plate for mounting a substrate to be performed with a predetermined process, a conveying function section having a conveying arm for moving the tray from one vacuum chamber to the other vacuum chamber along the guide plate, and a controlling function section, the controlling function section performing the control so as to open the shutter to communicate the two adjacent vacuum chambers, emit gas from the gas emission holes of

Abstract: A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

Abstract: A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member.

Abstract: An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

Abstract: An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

Abstract: The invention provides a deposition apparatus that enables significant reduction in the total gas consumption, simplification of the overall structure of the apparatus, and cost reduction of the apparatus even when feeding gas into a plurality of thin-film formation spacings. The apparatus has a plurality of thin-film formation spacings for forming same thin films. Source-gas feed openings capable of feeding at least a source gas are provided in each of the plurality of thin-film formation spacings. A discharge gas of at least one of the plurality of thin-film formation spacings can be fed into another one of the plurality of thin-film formation spacings through a discharge-gas flow path. A dilution gas is fed into the former thin-film formation spacing, and the discharge gas is discharged to the outside from the external discharge port of the another thin-film formation spacing.

Abstract: A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided.

Abstract: A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member.