Patents by Inventor Yusuke Goki

Yusuke Goki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082656
    Abstract: An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.
    Type: Application
    Filed: February 28, 2020
    Publication date: March 18, 2021
    Inventor: Yusuke GOKI
  • Publication number: 20180076266
    Abstract: A semiconductor device according to the embodiment includes a plurality of semiconductor layers arranged along a first direction and a second direction, wherein each of the semiconductor layers includes a first semiconductor layer and second semiconductor layers positioned at both upper and lower sides of the first semiconductor layer, and a gate electrode which faces the first semiconductor layer. A row of the semiconductor layer in the first direction is oblique to a row of the semiconductor layer in the second direction. At least one part of peripheral faces of the first semiconductor layer is in contact with the gate electrode along the first direction.
    Type: Application
    Filed: February 2, 2017
    Publication date: March 15, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Yusuke GOKI, Keiichi TAKENAKA
  • Patent number: 9917138
    Abstract: A semiconductor device according to the embodiment includes a plurality of semiconductor layers arranged along a first direction and a second direction, wherein each of the semiconductor layers includes a first semiconductor layer and second semiconductor layers positioned at both upper and lower sides of the first semiconductor layer, and a gate electrode which faces the first semiconductor layer. A row of the semiconductor layer in the first direction is oblique to a row of the semiconductor layer in the second direction. At least one part of peripheral faces of the first semiconductor layer is in contact with the gate electrode along the first direction.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: March 13, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yusuke Goki, Keiichi Takenaka