Abstract: An object of the present invention is to provide a multilayer wiring substrate for probe card capable of preventing deterioration of a thin film resistor 30.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes an electrically insulating substrate including a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and at least one substrate side surface facing a direction intersecting the thickness direction, a semiconductor element arranged at a side of the substrate main surface, a heat-dissipating conductive portion that is provided at a position overlapping with at least a portion of the semiconductor element when viewed from the thickness direction and is exposed from the substrate back surface, a sealing resin that seals the semiconductor element while covering the substrate main surface, and at least one wiring portion that is connected to the heat-dissipating conductive portion, extends from the heat-dissipating conductive portion to the substrate side surface while being exposed from the substrate back surface, and is exposed from the substrate side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: An electronic component includes a substrate having a principal surface, a chip arranged at the principal surface of the substrate, a sealing resin sealing the chip on the principal surface of the substrate, and a heat dissipation member formed on the sealing resin.

Abstract: An electronic component includes a substrate having a principal surface, a chip arranged at the principal surface of the substrate, a sealing resin sealing the chip on the principal surface of the substrate, and a heat dissipation member formed on the sealing resin.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.

Abstract: A tread portion of a motorcycle is on each side of the tire equator with main oblique grooves. The main oblique groove has an axially inner end at a axial distance from the tire equator, extends axially outwardly beyond the side edge of the narrow width ply of the breaker, terminates within the tread portion, and comprises an axially inner oblique segment extending axially outwardly from the axially inner end, while inclining to a tire circumferential direction at a smaller angle with respect to the tire circumferential direction, and an axially outer oblique segment extending from the axially inner oblique segment, while inclining to the tire circumferential direction at a larger angle with respect to the tire circumferential direction to form a bent point. The developed axial distance from the bent point to the narrow width ply side edge is not more than 10% of the developed tread width.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.

Abstract: A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the fist conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Abstract: A conductive layer which is formed on an insulative layer on a semiconductor substrate is connected to the semiconductor substrate via a through portion which passes through the insulative layer and reaches the semiconductor substrate. In a state where the conductive layer is electrically connected to the semiconductor substrate via the through portion, a patterning process using a plasma etching is performed on the conductive layer, thereby forming a conductive path. After the formation of the conductive path, a heating process is performed on the substrate or the conductive path in order to disconnect the electrical connection between the through portion and the substrate by a reaction between the through portion and the semiconductor substrate which is in contact therewith.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the fist conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.

Abstract: Before deposition of a CVD titanium film on a cobalt silicide layer, an element which reacts with titanium is provided in the cobalt silicide layer in advance. Thereafter, the CVD titanium film is deposited on the cobalt silicide using a titanium tetrachloride gas.