Abstract: A semiconductor device includes an electrically insulating substrate including a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and at least one substrate side surface facing a direction intersecting the thickness direction, a semiconductor element arranged at a side of the substrate main surface, a heat-dissipating conductive portion that is provided at a position overlapping with at least a portion of the semiconductor element when viewed from the thickness direction and is exposed from the substrate back surface, a sealing resin that seals the semiconductor element while covering the substrate main surface, and at least one wiring portion that is connected to the heat-dissipating conductive portion, extends from the heat-dissipating conductive portion to the substrate side surface while being exposed from the substrate back surface, and is exposed from the substrate side surface.

Abstract: In a slag discharge amount estimation method, images of a slag flow flowing out from an outlet of a refining vessel are captured with a single imaging device. An upstream side of the slag flow is wider than a downstream side. Widths of the slag flow are found from the captured images, and a volume flow rate or mass flow rate of the slag flow is found. On the basis of the volume flow rate or the mass flow rate, a slag discharge amount is estimated.

Abstract: An object of the present invention is to provide a multilayer wiring substrate for probe card capable of preventing deterioration of a thin film resistor 30.

Abstract: A semiconductor device includes: a semiconductor element; a sealing resin configured to cover the semiconductor element, the sealing resin including a resin main surface and a resin back surface, a first resin side surface, and a second resin side surface; a first lead including a first back surface, a first end surface, and a second end surface; a second lead electrically connected to the semiconductor element and including a second back surface exposed from the resin back surface and a third end surface exposed from the first resin side surface; a third lead provided between the first lead and the second lead in the first direction and including a third back surface exposed from the resin back surface and a fourth end surface exposed from the first resin side surface; and a first connector configured to connect the first lead and the third lead.

Abstract: Provided is a slave device that performs data communication with a master device via a bus. The slave device includes: an ID storage unit that stores an ID; and a communication unit that receives a control signal, including address information indicating a common address for the plurality of slave devices, specifying information specifying at least one slave device targeted for data communication, and data length information, and, in response to the specifying information in which its own slave device is not selected, determines not to communicate with the master device, and, in response to the specifying information in which its own slave device is selected, decides an order of the slave device to read or write data with a data length indicated in the data length information from/to a register of the slave device according to the ID and the specifying information.

Abstract: This semiconductor device comprises: a semiconductor element having an element surface, and an element rear surface on the opposite side from the element surface; an electrically conducting portion extending outward of the element rear surface from a position facing the element rear surface, and being electrically connected to the semiconductor element; and a sealing resin having a first sealing portion to which the electrically conducting portion is provided, and a second sealing portion that cooperates with the first sealing portion to seal the semiconductor element including the electrically conductive portion. The first sealing portion is constituted by a first material, and the second sealing portion is constituted by a second material. The Young's modulus of the second material is less than the Young's modulus of the first material.

Abstract: An object of the present invention is to provide a multilayer wiring substrate for probe card capable of preventing deterioration of a thin film resistor 30.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes an electrically insulating substrate including a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and at least one substrate side surface facing a direction intersecting the thickness direction, a semiconductor element arranged at a side of the substrate main surface, a heat-dissipating conductive portion that is provided at a position overlapping with at least a portion of the semiconductor element when viewed from the thickness direction and is exposed from the substrate back surface, a sealing resin that seals the semiconductor element while covering the substrate main surface, and at least one wiring portion that is connected to the heat-dissipating conductive portion, extends from the heat-dissipating conductive portion to the substrate side surface while being exposed from the substrate back surface, and is exposed from the substrate side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

Abstract: An electronic component includes a substrate having a principal surface, a chip arranged at the principal surface of the substrate, a sealing resin sealing the chip on the principal surface of the substrate, and a heat dissipation member formed on the sealing resin.

Abstract: An electronic component includes a substrate having a principal surface, a chip arranged at the principal surface of the substrate, a sealing resin sealing the chip on the principal surface of the substrate, and a heat dissipation member formed on the sealing resin.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.

Abstract: A tread portion of a motorcycle is on each side of the tire equator with main oblique grooves. The main oblique groove has an axially inner end at a axial distance from the tire equator, extends axially outwardly beyond the side edge of the narrow width ply of the breaker, terminates within the tread portion, and comprises an axially inner oblique segment extending axially outwardly from the axially inner end, while inclining to a tire circumferential direction at a smaller angle with respect to the tire circumferential direction, and an axially outer oblique segment extending from the axially inner oblique segment, while inclining to the tire circumferential direction at a larger angle with respect to the tire circumferential direction to form a bent point. The developed axial distance from the bent point to the narrow width ply side edge is not more than 10% of the developed tread width.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.

Abstract: A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the fist conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.