Abstract: An insert includes a cBN sintered compact including cBN particles and a binder phase binding the cBN particles. The cBN particles occupy 60% or more of the cross-sectional area of the cBN sintered compact. The binder phase contains Al compound particles containing at least one of AlN or Al2O3. A particle distribution of the Al compound particles in a cumulative distribution based on the number of the Al compound particles in a cross section of the cBN sintered compact is as follows. The proportion of the Al compound particles with the particle diameter of 0.3 ?m or larger is 5% or more, and the proportion of the Al compound particles with the particle diameter of 0.5 ?m or larger is less than 5%.

Abstract: With a mounting operation of a supply container, a supported portion 11b of a developer receiving portion 11 is supported by a receipt supporting portion 30c of a lifting portion 30. With further mounting operation, a shutter sliding portion 30b of the lifting portion 30 slides on a shutter inclined portion 4f of a shutter 4. The developer receiving portion 11 is displaced so as to bring a receiving opening into communication with a discharge opening by operating, using the shutter 4, the lifting portion 30 supporting the supported portion 11b of the developer receiving portion 11. By this, a load required for movement of the developer receiving portion 11 is reduced to achieve smooth mounting of the supply container.

Abstract: The composition of an alloy is inhomogeneous, so that the Fermi level of electrons in the surface of the alloy differs depending upon positions. It is accordingly considered that a part susceptible to corrosion and a part less susceptible thereto will coexist in the alloy. The corrosion rate of the alloy is indicated as the exponential function of a potential difference (.DELTA..PHI..sub.H) within an electric double layer. The potential difference remains unchanged as long as the Fermi level lies within the forbidden band of the electrons. However, in a range in which the Fermi level falls within the valence band of the electrons, the lowering thereof leads to the increase of the potential difference.