Abstract: An all solid battery includes a positive electrode layer that includes a positive electrode active material that is a Co-containing phosphate in which a portion of a Co site is replaced with at least one of Mg, Zn, or Ni, a negative electrode layer that includes a negative electrode active material, and a solid electrolyte layer that is sandwiched by the positive electrode layer and the negative electrode layer.

Abstract: An object of the present invention is to provide a polishing composition and a polishing method, with which SiN can be selectively polished at a high polishing removal rate as compared with SiO2. The polishing composition contains colloidal silica in which an organic acid is fixed on a surface and a pH adjusting agent, in which an average aspect ratio of the colloidal silica in which the organic acid is fixed on the surface is 1.38 or more.

Abstract: A silica sol which does not gelate, has a high purity, and contains a high concentration of silica particles is provided. A silica sol containing silica particles and water, wherein a product of an average primary particle size of the silica particles and an average circularity of the silica particles is 15.0 or more and 31.2 or less, a concentration of the silica particles is 20 mass % or more, a total organic carbon amount per silica particle is less than 10 mass ppm, when the concentration of the silica particles is 20 mass %, a viscosity at 25° C. is 300 mPa·s or less, and a concentration of a metal impurity is less than 1 mass ppm.

Abstract: Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S1 and a second polishing slurry S2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S1 comprises an abrasive A1 and a water-soluble polymer P1. The polishing removal rate of the first polishing slurry S1 is higher than that of the second polishing slurry S2.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: An object is to provide an electrode active material having a novel structure, said electrode active material enabling Li2S to be used as an electrode. The problem is solved by a solid solution with an antifluorite crystal structure comprising Li, Cu, and S as main constituents.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: The surface-modified colloidal silica according to an aspect of the present invention contains colloidal silica, and a surface-modifying group for modifying a surface of the colloidal silica, which has a polyoxyalkylene chain having a weight average molecular weight of 20,000 or more.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: There is provided a method for producing a silica sol including: a first step of adding an organic acid to at least one of liquid (A) containing an alkaline catalyst, water, and a first organic solvent and liquid (C) containing water; and a second step of mixing the liquid (A) with liquid (B) containing an alkoxysilane or its condensate and a second organic solvent, and the liquid (C) to make a reaction liquid after the first step.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S1 and a second polishing slurry S2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S1 comprises an abrasive A1 and a water-soluble polymer P1. The polishing removal rate of the first polishing slurry S1 is higher than that of the second polishing slurry S2.

Abstract: A tag access apparatus accesses an RFID tag provided with a first antenna having a radio wave directivity along a longitudinal direction of a plurality of test tubes arranged at a predetermined interval. The tag access apparatus has a multi-filler helical antenna which is provided in a direction opposite to the radio wave directivity of the first antenna and which maintains an electric field strength at a central part of the multi-filler helical antenna at a level that allows access to the RFID tag, at the time of access to the RFID tag.

Abstract: A planar antenna includes: first and second conductors each of which forms a microstrip line in combination with a ground electrode, and which are arranged in parallel with each other on a substrate; a plurality of first resonators disposed between the first conductor and the second conductor which electromagnetically couple the first conductor at one longitudinal end of each of the first resonators to generate electric fields which are in phase with each other; and at least one second resonator disposed between the first conductor and the second conductor which electromagnetically couples the second conductor at one longitudinal end of the at least one second resonator to generate an electric field which is in phase with the electric fields generated by the plurality of first resonators, wherein the at least one second resonator is arranged alternately with the plurality of first resonators.

Abstract: A planar antenna includes: first and second conductors each of which forms a microstrip line in combination with a ground electrode, and which are arranged in parallel with each other on a substrate; a plurality of first resonators disposed between the first conductor and the second conductor which electromagnetically couple the first conductor at one longitudinal end of each of the first resonators to generate electric fields which are in phase with each other; and at least one second resonator disposed between the first conductor and the second conductor which electromagnetically couples the second conductor at one longitudinal end of the at least one second resonator to generate an electric field which is in phase with the electric fields generated by the plurality of first resonators, wherein the at least one second resonator is arranged alternately with the plurality of first resonators.

Abstract: A tag access apparatus accesses an RFID tag provided with a first antenna having a radio wave directivity along a longitudinal direction of a plurality of test tubes arranged at a predetermined interval. The tag access apparatus has a multi-filler helical antenna which is provided in a direction opposite to the radio wave directivity of the first antenna and which maintains an electric field strength at a central part of the multi-filler helical antenna at a level that allows access to the RFID tag, at the time of access to the RFID tag.

Abstract: A processing apparatus including an internal circuit having a CPU and internal devices and an external circuit including external devices provided externally of the internal circuit, and the like, and is aimed to prevent illicit access and reverse engineering. The internal circuit including a CPU, internal devices and a bus line connecting the CPU to the internal devices and extending externally, and the external circuit including external devices provided externally of an externally extending portion of the bus line. The internal circuit further including a ciphering section 120 provided at an entrance to an external side and ciphering addresses and data on the bus line by ciphering patterns according to a plurality of regions divided from an address space allotted to the entire external devices.

Abstract: An RFID transceiver device is capable of high sensitivity reception, by the reduction of noise, irrespective of the distance to the tag. The RFID transceiver device includes a delay circuit between a local oscillation circuit and a demodulation circuit, wherein the amount of delay of the delay circuit is set to a magnitude corresponding to the path difference between the path of leakage, via a duplexer into the demodulation circuit, of transmission signal output from the local oscillation circuit for transmission, and the path of direct input of the local oscillation signal from the local oscillation circuit to the demodulation circuit.

Abstract: A wireless apparatus using the same carrier wave for transmission and reception is configured to store/hold, in a sample-hold circuit SH, a DC component generated by an interference wave, such as a carrier leakage, overlapped on a baseband signal demodulated by a demodulator DEM within a reception circuit of the apparatus, to remove the DC component, and to amplify a desired baseband signal at a high gain in a differential amplification circuit at the next stage.

Abstract: A fuel injection device for supplying high-pressure fuel to an internal combustion engine includes a fuel supply pump, a first common rail and a second common rail. High-pressure fuel is directly supplied to the first common rail and then to the second common rail from the first common rail through a connecting passage having an orifice. The high-pressure fuel accumulated in the common rails is supplied to injectors and is injected into cylinders in a controlled manner. To suppress pressure wave propagation from the first common rail to the second common rail while providing an appropriate flow passage size, a passage diameter of the orifice is set to 0.9 mm–1.3 mm. In this manner, a pressure difference between the first common rail and the second common rail is minimized.