Abstract: Provided is a heat treatment device including: a laser oscillator configured to produce a laser; one or more optical systems each configured to irradiate an object to be treated with the laser produced from the laser oscillator; and a rotating table on which the object is to be mounted. When a reaching temperature of the object, at which an activation rate of the object reaches a target value through one-time irradiation with the laser, is set as a first temperature, a second temperature lower than the first temperature is set as a target value of the reaching temperature of the object, and the object is repeatedly irradiated with the laser from one of the one or more optical systems two or more times.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a layer of a second conductivity type on a top-surface side of a substrate of a first conductivity type, and forming a buffer layer by performing a plurality of ion implantation steps, each of the ion implantation steps implanting ions of an impurity of the first conductivity type into a bottom-surface side of the substrate with an ion implantation angle with respect to a bottom surface of the substrate fixed, the ion implantation angle of a subsequent one of the ion implantation steps being smaller than that of the previous ion implantation step, wherein in the buffer layer formation step, the plurality of ion implantation steps is performed at a fixed acceleration energy.

Abstract: A heat treatment apparatus includes a laser oscillation unit, a stage, an optical system, and a moving unit. The laser oscillation unit oscillates laser light. The stage holds an irradiation target to be irradiated with the laser light. The optical system guides the laser light to the irradiation target. The moving unit relatively changes the positional relationship between the optical system and the irradiation target. Furthermore, the heat treatment apparatus includes a detection unit and a determination unit. The detection unit detects the power of first reflected light that is the laser light reflected from the surface of the irradiation target. On the basis of a detection value of the power of the first reflected light detected by the detection unit, the determination unit determines the presence or absence of a change in the surface temperature of an area irradiated with the laser light on the irradiation target.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a layer of a second conductivity type on a top-surface side of a substrate of a first conductivity type, and forming a buffer layer by performing a plurality of ion implantation steps, each of the ion implantation steps implanting ions of an impurity of the first conductivity type into a bottom-surface side of the substrate with an ion implantation angle with respect to a bottom surface of the substrate fixed, the ion implantation angle of a subsequent one of the ion implantation steps being smaller than that of the previous ion implantation step, wherein in the buffer layer formation step, the plurality of ion implantation steps is performed at a fixed acceleration energy.

Abstract: A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.

Abstract: According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured.

Abstract: According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured.

Abstract: A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.

Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.

Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.

Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.

Abstract: A method for evaluating an effect of an agent to be tested on alopecia, using a transgenic mouse to which an interleukin-18 gene under control of a keratinocyte promoter is introduced, or a method for evaluating an effect of an agent to be tested on skin, using the transgenic mouse, wherein the following (A) and/or (B) are used as an evaluation indicator. (A) spontaneous dermatitis (B) dermal inflammation at a time of a first administration of a phlogogenous material Using the transgenic mouse, the effect of an agent to be tested on dermatitis for which autoimmune dermatitis is a typical example and/or alopecia can be examined, and an agent for preventing/treating dermatitis or alopecia can be provided.

Abstract: On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.

Abstract: Novel remedies for metabolic bone diseases containing an IL-18 inhibitor as the active ingredient. These remedies exert a therapeutic effect by inhibiting the effect of overexpressed IL-18 which closely relates to the onset of osteoporosis. They are also useful as remedies for other metabolic bone diseases.

Abstract: On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.

Abstract: A method for evaluating an effect of an agent to be tested on alopecia, using a transgenic mouse to which an interleukin-18 gene under control of a keratinocyte promoter is introduced, or a method for evaluating an effect of an agent to be tested on skin, using the transgenic mouse, wherein the following (A) and/or (B) are used as an evaluation indicator.

Abstract: Each of contact plugs has an area of an upper surface larger than that of a lower surface. With this, better connections between contact plugs and plugs connected to upper surfaces of contact plugs are achieved. Therefore, a semiconductor device which can enhance a characteristic and a manufacturing method thereof are obtained.

Abstract: Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM2) is performed to form an opening (OP3) extending through at least an interlayer insulating film (5). Even after an etching stopper film (4) is exposed to the bottom part of the opening (OP3), the anisotropic dry etching is continued, using the etching stopper film (4) as etching mask, in order to form a contact hole (CH1) extending through an interlayer insulating film (3) to source/drain regions (11, 13). Therefore, the opening (OP3) and contact hole (CH1) are obtainable at a time in the same etching step.