Patents by Inventor Yusuke Kawase

Yusuke Kawase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105572
    Abstract: Provided is a heat treatment device including: a laser oscillator configured to produce a laser; one or more optical systems each configured to irradiate an object to be treated with the laser produced from the laser oscillator; and a rotating table on which the object is to be mounted. When a reaching temperature of the object, at which an activation rate of the object reaches a target value through one-time irradiation with the laser, is set as a first temperature, a second temperature lower than the first temperature is set as a target value of the reaching temperature of the object, and the object is repeatedly irradiated with the laser from one of the one or more optical systems two or more times.
    Type: Application
    Filed: February 23, 2017
    Publication date: April 2, 2020
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Takeshi Monodane, Yusuke Kawase, Tadaharu Minato, Shozui Takeno, Takahisa Nagayama, Haruhiko Minamitake, Kazunori Kanada, Hiroaki Tatsumi
  • Patent number: 10497570
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a layer of a second conductivity type on a top-surface side of a substrate of a first conductivity type, and forming a buffer layer by performing a plurality of ion implantation steps, each of the ion implantation steps implanting ions of an impurity of the first conductivity type into a bottom-surface side of the substrate with an ion implantation angle with respect to a bottom surface of the substrate fixed, the ion implantation angle of a subsequent one of the ion implantation steps being smaller than that of the previous ion implantation step, wherein in the buffer layer formation step, the plurality of ion implantation steps is performed at a fixed acceleration energy.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: December 3, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yusuke Kawase
  • Patent number: 9691619
    Abstract: A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 27, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazunori Kanada, Tadaharu Minato, Yusuke Kawase
  • Patent number: 9673308
    Abstract: According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: June 6, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yusuke Kawase, Kazunori Kanada, Tadaharu Minato
  • Patent number: 9102637
    Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: August 11, 2015
    Assignees: CARNA BIOSCIENCES, INC., NATIONAL CANCER CENTER
    Inventors: Masaaki Sawa, Hideki Moriyama, Tesshi Yamada, Miki Shitashige, Yusuke Kawase, Yuko Uno
  • Patent number: 9082716
    Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: July 14, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Takuichiro Shitomi, Yusuke Kawase, Junichi Yamashita, Manabu Yoshino
  • Publication number: 20150133656
    Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: May 22, 2013
    Publication date: May 14, 2015
    Applicants: CARNA BIOSCIENCES INC., NATIONAL CANCER CENTER
    Inventors: Masaaki Sawa, Hideki Moriyama, Tesshi Yamada, Miki Shitashige, Yusuke Kawase, Yuko Uno
  • Publication number: 20130317218
    Abstract: The present invention relates to novel bicyclic thiazole compounds that inhibit Traf2- and Nck-interacting kinase (TNIK), and as such are useful as TNIK inhibitors administered to cancer patients, especially to solid cancer patients such as colorectal cancer, pancreatic cancer, non-small cell lung cancer, prostate cancer or breast cancer. The bicyclic thiazole compounds are showed by a next formula (I). (wherein R1, R2, R3 and Q are as defined in the specification), or a pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: May 24, 2012
    Publication date: November 28, 2013
    Inventors: Masaaki Sawa, Hideki Moriyama, Tesshi Yamada, Miki Shitashige, Yusuke Kawase, Yuko Uno
  • Publication number: 20050283846
    Abstract: A method for evaluating an effect of an agent to be tested on alopecia, using a transgenic mouse to which an interleukin-18 gene under control of a keratinocyte promoter is introduced, or a method for evaluating an effect of an agent to be tested on skin, using the transgenic mouse, wherein the following (A) and/or (B) are used as an evaluation indicator. (A) spontaneous dermatitis (B) dermal inflammation at a time of a first administration of a phlogogenous material Using the transgenic mouse, the effect of an agent to be tested on dermatitis for which autoimmune dermatitis is a typical example and/or alopecia can be examined, and an agent for preventing/treating dermatitis or alopecia can be provided.
    Type: Application
    Filed: August 25, 2005
    Publication date: December 22, 2005
    Inventors: Tomoaki Hoshino, Yusuke Kawase, Keiko Nomiyama, Koichi Yokota, Kohichiro Yoshino
  • Patent number: 6977199
    Abstract: On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.
    Type: Grant
    Filed: July 28, 2004
    Date of Patent: December 20, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Takeshi Kishida, Yusuke Kawase
  • Publication number: 20050074434
    Abstract: Novel remedies for metabolic bone diseases containing an IL-18 inhibitor as the active ingredient. These remedies exert a therapeutic effect by inhibiting the effect of overexpressed IL-18 which closely relates to the onset of osteoporosis. They are also useful as remedies for other metabolic bone diseases.
    Type: Application
    Filed: February 25, 2002
    Publication date: April 7, 2005
    Inventors: Tomoaki Hoshino, Koichi Yokota, Yusuke Kawase
  • Publication number: 20050032305
    Abstract: On a silicon oxide film including the interior of an opening a semispherical RGP film is deposited. At a temperature lower than that allowing a crystal of silicon to be grown a BPTEOS film is deposited to fill the opening. Then a portion other than the semispherical RGP film introduced in the opening is chemically mechanically polished and thus removed. This contributes to reduced crystal growth of silicon at the semispherical RGP film and hence reduced scattering and/or removal of the RGP film for example when a CMP step is performed. Subsequently the semispherical RGP film is annealed to grow a crystal of silicon to form a generally spherical RGP film. Thus a storage node can have an increased surface area and a capacitor can have increased capacity.
    Type: Application
    Filed: July 28, 2004
    Publication date: February 10, 2005
    Inventors: Takeshi Kishida, Yusuke Kawase
  • Publication number: 20040191172
    Abstract: A method for evaluating an effect of an agent to be tested on alopecia, using a transgenic mouse to which an interleukin-18 gene under control of a keratinocyte promoter is introduced, or a method for evaluating an effect of an agent to be tested on skin, using the transgenic mouse, wherein the following (A) and/or (B) are used as an evaluation indicator.
    Type: Application
    Filed: October 30, 2003
    Publication date: September 30, 2004
    Inventors: Tomoaki Hoshino, Yusuke Kawase, Keiko Nomiyama, Koichi Yokota, Kohichiro Yoshino
  • Publication number: 20040132238
    Abstract: Each of contact plugs has an area of an upper surface larger than that of a lower surface. With this, better connections between contact plugs and plugs connected to upper surfaces of contact plugs are achieved. Therefore, a semiconductor device which can enhance a characteristic and a manufacturing method thereof are obtained.
    Type: Application
    Filed: August 14, 2003
    Publication date: July 8, 2004
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventors: Taichi Hirokawa, Yusuke Kawase, Akira Matsumura
  • Patent number: 6716697
    Abstract: Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM2) is performed to form an opening (OP3) extending through at least an interlayer insulating film (5). Even after an etching stopper film (4) is exposed to the bottom part of the opening (OP3), the anisotropic dry etching is continued, using the etching stopper film (4) as etching mask, in order to form a contact hole (CH1) extending through an interlayer insulating film (3) to source/drain regions (11, 13). Therefore, the opening (OP3) and contact hole (CH1) are obtainable at a time in the same etching step.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: April 6, 2004
    Assignee: Renesas Technology Corp.
    Inventor: Yusuke Kawase
  • Publication number: 20040009641
    Abstract: Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM2) is performed to form an opening (OP3) extending through at least an interlayer insulating film (5). Even after an etching stopper film (4) is exposed to the bottom part of the opening (OP3), the anisotropic dry etching is continued, using the etching stopper film (4) as etching mask, in order to form a contact hole (CH1) extending through an interlayer insulating film (3) to source/drain regions (11, 13). Therefore, the opening (OP3) and contact hole (CH1) are obtainable at a time in the same etching step.
    Type: Application
    Filed: December 31, 2002
    Publication date: January 15, 2004
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventor: Yusuke Kawase
  • Publication number: 20020149012
    Abstract: A semiconductor device has: a semiconductor substrate as a base layer having a main surface; a plurality of wiring swellings formed so as to be linearly swollen on the main surface; and a plurality of plugs made of a conductive material formed so as to bury a part of a recess formed by being sandwiched by wiring swellings. Wiring swelling includes a wiring layer, an on-wiring stopper film as a wiring layer top face protective layer formed so as to cover the top face of wiring layer, and a side wall spacer covering a side face of wiring layer and a side face of on-wiring stopper film. The level of the top face of wiring swelling and that of the top face of plug are almost the same with respect to the main surface as a reference.
    Type: Application
    Filed: September 10, 2001
    Publication date: October 17, 2002
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Yusuke Kawase