Abstract: A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

Abstract: A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.

Abstract: An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. Further, the W concentration obtained by the metal analysis of the surface of the silicon epitaxial layer using the inductively coupled plasma mass spectrometry is preferably 1×107 atoms/cm2 or less.

Abstract: An epitaxial apparatus, including a supporting member to support a substrate; an external wall provided to surround the supporting member from the sides; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.

Abstract: This epitaxial apparatus includes: a supporting member to support a substrate; an external wall that is provided to surround the supporting member from the sides and that has a gas supply port for supplying gas on the substrate; an inner lid member provided in a removable manner on the external wall and covering at least a part of a gap between the supporting member and the external wall; an upper lid member that covers the substrate in a region surrounded by the external wall; a holding member that is held by the external wall, holds the upper lid member so that the upper lid member is sandwiched between the holding member and the external wall, and has a cooling unit to cool down a portion that holds the upper lid member; a heating unit; and a covering member provided so as to cover the surface of at least one of the upper lid member and the holding member.