Abstract: A liquid discharge apparatus includes a discharging unit configured to be capable of discharging a plurality of kinds of liquids onto a medium, and a waste liquid tank including a storage part configured to store a waste liquid of the liquid. The waste liquid tank includes a first inflow port and a second inflow port from which the waste liquid flows into the storage part, and a restriction portion located between the first inflow port and the second inflow port, and configured to restrict movement of the waste liquid in the storage part.

Abstract: A photodetector according to an embodiment of the present disclosure includes a first substrate, a second substrate, a first electrode, and a second electrode. The first substrate has a first surface serving as a light receiving surface and a second surface opposed to the first surface, and has a plurality of pixels disposed in an arrayed manner. The first substrate includes a light receiving section provided for each of the pixels. The light receiving section generates, through photoelectric conversion, electric charge corresponding to the amount of received light. The second substrate is disposed on a side of the second surface of the first substrate, has a third surface directly opposed to the second surface, and also has a fourth surface opposed to the third surface. The second substrate has a band gap wider than a band gap of the first substrate. The second substrate includes a multiplication section provided for each of the pixels.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A front vehicle-body structure controls inward breakage of an apron reinforcement in the event of a small overlap collision, without increasing weight. Embodiments include a pair of right and left apron reinforcements extending in a vehicle front-rear direction; and a pair of right and left hinge pillars respectively connected to rear ends of the pair of apron reinforcements. A reinforcement outer member of the apron reinforcement includes a linear portion extending in the vehicle front-rear direction from a rear end of the apron reinforcement connected to the hinge pillar to an intermediate portion of the apron reinforcement. A horizontal bead, provided as a deformation facilitating portion to facilitate deformation toward an inside of a vehicle body, is disposed on an outer surface portion positioned on a vehicle-width-direction outer side of the linear portion, the horizontal bead having a reduced longitudinal rigidity toward a front side in the vehicle front-rear direction.

Abstract: A solid-state imaging device includes a light-receiving surface, a plurality of pixels each including a photoelectric conversion section that photoelectrically converts light incident through the light-receiving surface, and a separation section that electrically and optically separates each photoelectric conversion section. Each of the pixels includes a charge-holding section that holds charges transferred from the photoelectric conversion section, a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, and transfers charges from the photoelectric conversion section to the charge-holding section, and a light-blocking section disposed in a layer between the photoelectric conversion section and the charge-holding section. A plurality of the vertical gate electrodes are electrically coupled together in a plurality of first pixels adjacent to each other among the plurality of pixels.

Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Abstract: An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A front vehicle-body structure controls inward breakage of an apron reinforcement in the event of a small overlap collision, without increasing weight. Embodiments include a pair of right and left apron reinforcements extending in a vehicle front-rear direction; and a pair of right and left hinge pillars respectively connected to rear ends of the pair of apron reinforcements. A reinforcement outer member of the apron reinforcement includes a linear portion extending in the vehicle front-rear direction from a rear end of the apron reinforcement connected to the hinge pillar to an intermediate portion of the apron reinforcement. A horizontal bead, provided as a deformation facilitating portion to facilitate deformation toward an inside of a vehicle body, is disposed on an outer surface portion positioned on a vehicle-width-direction outer side of the linear portion, the horizontal bead having a reduced longitudinal rigidity toward a front side in the vehicle front-rear direction.

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: A solid-state image sensor includes: a floating diffusion to which signal charges that have been accumulated in a photodiode that performs photoelectric conversion are transferred; a common-source amplifier transistor that reads the signal charges that have been transferred to the floating diffusion as an electrical signal and amplifies the electrical signal; a first wiring that connects the floating diffusion and the amplifier transistor to each other; and a second wiring disposed on an electrically-downstream side of the amplifier transistor, in which at least a part of the first wiring and at least a part of the second wiring face each other.

Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: The present invention aims at providing a storage system capable of shortening the recovery time from failure while ensuring the reliability of data when failure occurs to a storage device. When failure occurs to a storage device, a recovery processing corresponding to the content of failure is executed for the blocked storage device. The storage device recovered via the execution of the recovery processing is subjected to a check corresponding to the operation status of the storage system or the failure history of the storage device.

Abstract: A storage apparatus and program update method for reducing tediousness and complications of drive inventory management. A storage apparatus 10 includes a disk unit 400 composed of a plurality of first drives 420 storing first firmware of the same type, a controller 100 for controlling data during operation of the first firmware, a relay device 300, and a second drive 520. Then, the second drive 520 stores second firmware of the same type as that of the first firmware and third firmware of a type different from that of the first firmware. The controller 100 includes: a firmware comparison unit for comparing the first firmware with the second firmware; a firmware comparison unit for deciding firmware to operate on the storage apparatus 10 based on the comparison result; and a firmware update unit for updating the firmware operating on the first drive 420 or the second drive 520 with the decided firmware.

Abstract: Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type wel

Abstract: A storage apparatus and program update method for reducing tediousness and complications of drive inventory management. A storage apparatus 10 includes a disk unit 400 composed of a plurality of first drives 420 storing first firmware of the same type, a controller 100 for controlling data during operation of the first firmware, a relay device 300, and a second drive 520. Then, the second drive 520 stores second firmware of the same type as that of the first firmware and third firmware of a type different from that of the first firmware. The controller 100 includes: a firmware comparison unit for comparing the first firmware with the second firmware; a firmware comparison unit for deciding firmware to operate on the storage apparatus 10 based on the comparison result; and a firmware update unit for updating the firmware operating on the first drive 420 or the second drive 520 with the decided firmware.