Abstract: A power storage component module includes power storage components and a bus bar connecting the power storage components to one another. At least one positioning boss is provided on an electrode included in the power storage components. The at least one positioning boss protrudes upward. The at least one positioning boss includes a base end and a distal end having a diameter less than a diameter of the base end. At least one through hole opens in the bus bar. The bus bar is placed on the at least one positioning boss and a hole edge of the at least one through hole is disposed around the at least one positioning boss between the base end of the at least one positioning boss and the distal end of the at least one positioning boss in a vertical direction.

Abstract: A method for manufacturing a surface-treated gas-phase-process silica particle, the method including steps of: adding 1,3-divinyl-1,1,3,3-tetramethyldisilazane to a raw material gas-phase-process silica particle and introducing a vinyldimethylsilyl group on a surface of the raw material gas-phase-process silica particle to obtain a preliminarily treated silica particle; and adding hexamethyldisilazane to the preliminarily treated silica particle and introducing a trimethylsilyl group on a surface of the preliminarily treated silica particle to obtain a surface-treated gas-phase-process silica particle.

Abstract: A battery includes a positive electrode, a negative electrode, and an electrolyte layer located between the positive electrode and the negative electrode. The negative electrode includes a negative electrode current collector and a negative electrode active material layer located between the negative electrode current collector and the electrolyte layer. The negative electrode active material layer includes a plurality of columnar bodies. The columnar bodies include silicon and a filler including nickel. The filler is embedded in the columnar bodies.

Abstract: A recording apparatus includes a conveyance unit that conveys a recording medium in a first direction toward a recording head for ejecting a liquid, a tank including a containing chamber containing the liquid to be supplied to the recording head, and an injection port through which the liquid is injected into the containing chamber, the tank being disposed downstream of the conveyance unit in the first direction, a rotatable lever that holds a tank cap for closing the injection port, and a cover that rotates about a rotation shaft between an open position for exposing the lever and a closed position for covering the lever, the rotation shaft being disposed upstream of the conveyance unit in the first direction. The cover includes a sliding portion that is provided on a surface facing the lever and comes into contact with the lever while the cover is rotating toward the closed position.

Abstract: A recording apparatus includes a tank including a chamber configured to store liquid to be supplied to a recording head that ejects the liquid and a filling port from which the liquid is injected into the chamber, and an injection auxiliary member configured to assist injecting of the liquid into the chamber from the filling port, the injection auxiliary member including a first and a second flow channels each defined by a first or a second upper end portion that opens toward outside of the tank and a first or a second lower end portion that opens toward inside of the tank, wherein the second flow channel has an expansion portion arranged in a middle portion between the second upper end portion and the second lower end portion and configured to form a step to expand a cross-sectional area.

Abstract: An ink tank that enables to check whether a cover of an ink tank is normally bonded to the ink tank includes a first chamber having a supply port for supplying ink to a printing head that ejects ink, a second chamber having an external air introduction port capable of introducing external air, a partition wall configured to separate the first chamber and the second chamber, a communication path provided in the partition wall and configured to place the first chamber and the second chamber in communication with each other, a first cover member configured to cover an opening of the first chamber without extending over an opening of the second chamber, and a second cover member configured to cover the opening of the second chamber without extending over the opening of the first chamber.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A front vehicle-body structure controls inward breakage of an apron reinforcement in the event of a small overlap collision, without increasing weight. Embodiments include a pair of right and left apron reinforcements extending in a vehicle front-rear direction; and a pair of right and left hinge pillars respectively connected to rear ends of the pair of apron reinforcements. A reinforcement outer member of the apron reinforcement includes a linear portion extending in the vehicle front-rear direction from a rear end of the apron reinforcement connected to the hinge pillar to an intermediate portion of the apron reinforcement. A horizontal bead, provided as a deformation facilitating portion to facilitate deformation toward an inside of a vehicle body, is disposed on an outer surface portion positioned on a vehicle-width-direction outer side of the linear portion, the horizontal bead having a reduced longitudinal rigidity toward a front side in the vehicle front-rear direction.

Abstract: A solid-state imaging device includes a light-receiving surface, a plurality of pixels each including a photoelectric conversion section that photoelectrically converts light incident through the light-receiving surface, and a separation section that electrically and optically separates each photoelectric conversion section. Each of the pixels includes a charge-holding section that holds charges transferred from the photoelectric conversion section, a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, and transfers charges from the photoelectric conversion section to the charge-holding section, and a light-blocking section disposed in a layer between the photoelectric conversion section and the charge-holding section. A plurality of the vertical gate electrodes are electrically coupled together in a plurality of first pixels adjacent to each other among the plurality of pixels.

Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Abstract: An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A front vehicle-body structure controls inward breakage of an apron reinforcement in the event of a small overlap collision, without increasing weight. Embodiments include a pair of right and left apron reinforcements extending in a vehicle front-rear direction; and a pair of right and left hinge pillars respectively connected to rear ends of the pair of apron reinforcements. A reinforcement outer member of the apron reinforcement includes a linear portion extending in the vehicle front-rear direction from a rear end of the apron reinforcement connected to the hinge pillar to an intermediate portion of the apron reinforcement. A horizontal bead, provided as a deformation facilitating portion to facilitate deformation toward an inside of a vehicle body, is disposed on an outer surface portion positioned on a vehicle-width-direction outer side of the linear portion, the horizontal bead having a reduced longitudinal rigidity toward a front side in the vehicle front-rear direction.

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: A solid-state image sensor includes: a floating diffusion to which signal charges that have been accumulated in a photodiode that performs photoelectric conversion are transferred; a common-source amplifier transistor that reads the signal charges that have been transferred to the floating diffusion as an electrical signal and amplifies the electrical signal; a first wiring that connects the floating diffusion and the amplifier transistor to each other; and a second wiring disposed on an electrically-downstream side of the amplifier transistor, in which at least a part of the first wiring and at least a part of the second wiring face each other.

Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.