Abstract: A MEMS device is a MEMS device having a MEMS vibrator which includes a plurality of MEMS constituent elements laminated and formed above a first foundation portion which is laminated above a main surface of a wafer substrate, and the MEMS constituent elements are laminated above a first oxide film and a nitride film so as to cover an opening which is formed in the nitride film and exposes a second foundation portion above which the nitride film is laminated.

Abstract: A MEMS element includes a substrate which includes a flexible portion, a fixation electrode which is provided on a principal surface of the substrate, and a movable electrode which includes a movable portion which is separated from the fixation electrode, overlaps with at least a portion of the fixation electrode in a plan view of the principal surface, and is driven in a direction intersecting the principal surface, and a fixation end connected to the principal surface. The fixation electrode and the movable electrode is disposed to correspond to the flexible portion.

Abstract: A physical quantity sensor includes a substrate, a piezoresistive element that is arranged on one face side of the substrate, a wall portion that is arranged to surround the piezoresistive element on the one face side of the substrate in a plan view of the substrate, and a ceiling portion that constitutes a cavity portion with the wall portion, in which the ceiling portion includes a cladding layer that has a pore which passes therethrough in the thickness direction of the cladding layer, and a seal layer that is stacked on the opposite side of the cladding layer from the substrate and closes the pore, the seal layer in which at least a part of the outer periphery of a contact portion where the seal layer is in contact with the cladding layer is on the outside of the cavity portion in a plan view.

Abstract: A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.

Abstract: A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.

Abstract: A MEMS device includes: a substrate; a sensor element (functional element) that is disposed above the substrate; a surrounding wall that is disposed above one surface side of the substrate and surrounds the sensor element in a plan view; a covering layer that overlaps the substrate in the plan view and is connected to the surrounding wall; and a reinforcing layer that is arranged between the covering layer and the sensor element. The surrounding wall includes a substrate-side surrounding wall, and a covering layer-side surrounding wall that is located on the covering layer side of the substrate-side surrounding wall and at least a portion of which is disposed above the inside of the substrate-side surrounding wall in the plan view.

Abstract: A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.

Abstract: A MEMS element includes a substrate and a plurality of resonators which are formed above a first surface of the substrate, the substrate includes at least one flexible portion and at least one non-flexible portion, and resonators corresponding to the flexible portion and the non-flexible portion are disposed.

Abstract: A MEMS element includes a substrate which includes a flexible portion, a fixation electrode which is provided on a principal surface of the substrate, and a movable electrode which includes a movable portion which is separated from the fixation electrode, overlaps with at least a portion of the fixation electrode in a plan view of the principal surface, and is driven in a direction intersecting the principal surface, and a fixation end connected to the principal surface. The fixation electrode and the movable electrode is disposed to correspond to the flexible portion.

Abstract: A MEMS device is a MEMS device having a MEMS vibrator which includes a plurality of MEMS constituent elements laminated and formed above a first foundation portion which is laminated above a main surface of a wafer substrate, and the MEMS constituent elements are laminated above a first oxide film and a nitride film so as to cover an opening which is formed in the nitride film and exposes a second foundation portion above which the nitride film is laminated.

Abstract: A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a second semiconductor layer on the first semiconductor layer, etching the second semiconductor layer and the first semiconductor layer to form a first groove passing through the second semiconductor layer and the first semiconductor layer, forming a first support having tensile stress in the first groove, etching the second semiconductor layer to form a second groove that exposes the first semiconductor layer, forming a cavity between the second semiconductor layer and the semiconductor substrate by etching the first semiconductor layer through the second groove, forming an insulating film in the cavity, and forming a buried film having tensile stress in the second groove.

Abstract: A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a second semiconductor layer on the first semiconductor layer, etching the second semiconductor layer and the first semiconductor layer to form a first groove passing through the second semiconductor layer and the first semiconductor layer, forming a support in the first groove, etching the second semiconductor layer to form a second groove that exposes the first semiconductor layer, forming a cavity between the second semiconductor layer and the semiconductor substrate by etching the first semiconductor layer through the second groove, forming a semiconductor film in the cavity, and thermally oxidizing the semiconductor film.

Abstract: A method for manufacturing a semiconductor device includes: a first step for successively staking on a semiconductor substrate a first semiconductor layer, a second semiconductor layer and a third semiconductor layer; a second step for forming on the semiconductor substrate a first groove passing through the third semiconductor layer, the second semiconductor layer and the first semiconductor layer by partially etching the third semiconductor layer, the second semiconductor layer and the first semiconductor layer successively; a third step for forming on the entire surface of the upper side of the semiconductor substrate a carrier film to fill the first groove and cover the third semiconductor layer; a fourth step for exposing the third semiconductor layer by partially etching the carrier film including its site covering the third semiconductor layer; a fifth step for forming a second groove by successively etching the third semiconductor layer, the second semiconductor layer and the first semiconductor layer