Abstract: A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a first detector configured to detect a first value that varies depending on at least pressure of a first portion above the stage in the chamber, and a controller configured to control a process of forming the film on the substrate based on the first value.

Abstract: Provided is an oxidation method and oxygen apparatus of sulfur compounds in a gas in which stable sulfur compounds such as carbonyl sulfide can be easily converted into sulfur oxide, and an analysis apparatus of sulfur compounds to which the oxidation method and the oxidation apparatus are applied. Sulfur compounds other than sulfur dioxide contained in a gas is subjected to a silent discharge treatment, whereby those sulfur compounds are oxidized and converted into sulfur dioxide. The analysis apparatus includes a silent discharge treatment unit in which a gas containing sulfur compounds is subjected to a silent discharge treatment to oxidize sulfur compounds other than sulfur dioxide to be converted into sulfur dioxide, and an analyzing unit in which the concentration of sulfur dioxide contained in the gas which has been subjected to silent discharge treatment in the silent discharge treatment unit is measured.