Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a first detector configured to detect a first value that varies depending on at least pressure of a first portion above the stage in the chamber, and a controller configured to control a process of forming the film on the substrate based on the first value.

Abstract: Provided is an oxidation method and oxygen apparatus of sulfur compounds in a gas in which stable sulfur compounds such as carbonyl sulfide can be easily converted into sulfur oxide, and an analysis apparatus of sulfur compounds to which the oxidation method and the oxidation apparatus are applied. Sulfur compounds other than sulfur dioxide contained in a gas is subjected to a silent discharge treatment, whereby those sulfur compounds are oxidized and converted into sulfur dioxide. The analysis apparatus includes a silent discharge treatment unit in which a gas containing sulfur compounds is subjected to a silent discharge treatment to oxidize sulfur compounds other than sulfur dioxide to be converted into sulfur dioxide, and an analyzing unit in which the concentration of sulfur dioxide contained in the gas which has been subjected to silent discharge treatment in the silent discharge treatment unit is measured.