Abstract: A photovoltaic module includes a front protective layer, a back protective layer, a plurality of solar cells, and a filler. The front protective layer is transmissive to light and has a first surface and a second surface opposite to the first surface. The back protective layer faces the second surface. The plurality of solar cells are between the second surface and the back protective layer. The filler is between the front protective layer and the plurality of solar cells and covers the plurality of solar cells. The filler includes a material with a chemical structure to generate a free acid. The front protective layer includes a weather-resistance resin. At least a part of the first surface is exposed to a space external to the photovoltaic module.

Abstract: A measurement method for a photovoltaic module includes loading and measuring . The loading includes loading a photovoltaic module onto a measurement device. The measuring includes measuring, with an output characteristic measurer included in the measurement device, an output voltage value and an output current value between a positive terminal and a negative terminal of the photovoltaic module, and measuring, with a weight measurer included in the measurement device, a weight value of the photovoltaic module.

Abstract: A measurement device for a photovoltaic module includes an output characteristic measurer and a weight measurer. The output characteristic measurer measures an output voltage value and an output current value between a positive terminal and a negative terminal of the photovoltaic module. The weight measurer measures a weight value of the photovoltaic module.

Abstract: A solar cell module includes a resin first protective layer being light transmissive, a second protective layer, a solar cell portion, a resin first filler layer, a resin second filler layer, a substrate, and an adhesive layer. The solar cell portion includes solar cell elements between the protective layers. The first filler layer facing the first protective layer covers the solar cell elements. The second filler layer facing the second protective layer covers the solar cell elements. The adhesive layer bonds the second protective layer and the substrate. The first protective layer is softer than the substrate. One or more of the second filler layer, the second protective layer, and the adhesive layer have a higher Young's modulus than the first filler layer.

Abstract: A solar cell module includes first and second plates, a solar cell section positioned in a gap between the first plate and the second plate, and a plurality of wiring materials electrically connected to the solar cell section. The first plate has a first face, and a second face opposite the first face. The second plate has a third face opposed to the second face, and a fourth face opposite the third face. At least one of the first and second plates has a light-transmitting property. At least one wiring material of the plurality of wiring materials is positioned from the inside of the gap to the outside of the gap, along a cutout part that is cut out in a part along one side of the second plate with the first plate as a reference, in plan view of the second plate part.

Abstract: A solar cell module includes first and second plate parts, a solar cell section, a wiring material, and first and second sealing materials. The second plate part is facing the first plate part. The solar cell section is positioned in a gap between the first and second plate parts. The wiring material is electrically connected to the solar cell section and is positioned from an inside of the gap to an outside of the gap via a through hole of the first plate part. The first sealing material is positioned in a region covering the solar cell section in the gap. The second sealing material with a higher water barrier property than the first sealing material is filled in an annular region that is closer to the through hole than the first sealing material in the gap and surrounds the through hole in plan perspective view.

Abstract: In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Abstract: A photoelectric conversion efficiency of a photoelectric conversion device is improved. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer disposed on the electrode layer and including a group I-III-VI compound and oxygen element, and a second semiconductor layer disposed on the first semiconductor layer and forming a pn junction with the first semiconductor layer, and an atomic concentration of the oxygen element in the first semiconductor layer is lower in a surface portion on the electrode layer side than in a central portion of the first semiconductor layer in a lamination direction thereof.

Abstract: In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device is provided with an electrode layer, a first semiconductor layer that is positioned on the electrode layer and contains a polycrystalline semiconductor, and a second semiconductor layer that is positioned on/above the first semiconductor layer and forms a p-n junction with the first semiconductor layer, and an average grain diameter of crystal grains in the first semiconductor layer is larger near the surface on the electrode layer side of the first semiconductor layer than the center of the first semiconductor layer in a thickness direction of the first semiconductor layer. Furthermore, the average grain diameter of the crystal grains in the first semiconductor layer is larger in a surface portion on the second semiconductor layer side of the first semiconductor layer than in the central portion.

Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region.