Abstract: A Group III nitride seed crystal substrate for use in a method for producing a large-sized Group III nitride crystal with few defects is provided. A Group III nitride seed crystal substrate for use in a method for producing a Group III nitride crystal, includes: a substrate; and a plurality of Group III nitride seed crystals arranged over the flat surface of a main surface of the substrate.

Abstract: An object of the present invention is to provide a method for improving a proportion of capsids containing a gene of interest GOI in a method for producing a virus, and to provide a method for improving a proportion of capsids containing a gene of interest GOI in a method for introducing a nucleic acid into cells, the method including a nucleic acid introduction step of adding a nucleic acid to a suspension containing cells. According to the present invention, there is provided a method for producing a virus, the method including a nucleic acid introduction step of adding a nucleic acid to a suspension containing cells having a density of 10×106 cells/mL or more, and a culture step of culturing the cells into which the nucleic acid has been introduced, in which the nucleic acid is added in a case where a population cell doubling time of the suspension satisfies 35.4 hours or less.

Abstract: An object of the present invention is to provide a method for manufacturing an adeno-associated virus, which is capable of improving a ratio of an amount of a capsid containing a full-length gene to a total amount of the capsids, and a set of vectors for use in the method for manufacturing an adeno-associated virus. According to the present invention, there is provided a method for manufacturing an adeno-associated virus, the method including a gene transfer step of transferring a first vector containing a Rep gene and a Cap gene and a second vector containing a Rep gene and a Cap gene into a cell and a cell culture step of culturing the cell into which gene transfer has been performed, in which the first vector is different from the second vector, the Rep genes contained in the first vector and the second vector are full-length and of the same serum type, and the Cap genes contained in the first vector and the second vector are full-length and of the same serum type.

Abstract: A second harmonic generation element includes a substrate, a first multilayer film reflecting mirror, a second harmonic generation layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The second harmonic generation layer is disposed on the first multilayer film reflecting mirror. The second harmonic generation layer is made of a SrB4O7 crystal that receives a fundamental wave with a predetermined wavelength and emits a second harmonic wave with a wavelength in an ultraviolet region. The second multilayer film reflecting mirror is formed on the second harmonic generation layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror.

Abstract: A semiconductor storage device of an embodiment has a substrate, a first interconnection, a second interconnection, a channel portion, first charge storage portions, and second charge storage portions. The first interconnection extends in a first direction, and the second interconnection is adjacent to the first interconnection in a second direction intersecting the first direction and extends in the first direction. The channel portion is provided between the first interconnection and the second interconnection and extends in a third direction intersecting the first direction and the second direction. The first charge storage portions are provided between the first interconnection and the channel portion. The second charge storage portions are provided between the second interconnection and the channel portion.

Abstract: Provided is a manufacturing method of a group-III nitride semiconductor capable of improving crystallinity. The manufacturing method of a group-III nitride semiconductor includes: an alkali metal coating step of covering a surface of an alkali metal of a solid form with a group-III metal; a mixed melt generation step of melting the alkali metal coated with the group-III metal along with the carbon to generate a mixed melt; and a crystal growth step of immersing a seed substrate in the mixed melt to grow a group-III nitride semiconductor on the seed substrate under an atmosphere containing nitrogen.

Abstract: Artificial intelligence (AI)-based in-flight assistants and associated systems, devices, and methods are disclosed herein. In some implementations, an in-flight entertainment and communication (IFEC) system provides an AI-based virtual assistant that a passenger can submit various requests or queries. For example, a passenger can ask the virtual assistant to generate an itinerary for their destination, edit documents stored on their personal laptop, order food or other items mid-flight, reach out to a crew member, check lavatory availability, and more. An AI model onboard the airplane can process these requests and generate responses in real-time, even if offline. The virtual assistant can be visually represented by an assistant graphical character on a display and talk to the passenger. Thus, the AI-based virtual assistant can provide an improved in-flight user experience compared to conventional IFEC systems.

Abstract: A method for manufacturing a group III nitride semiconductor includes a growing step of growing the group III nitride semiconductor on a seed substrate by supplying a gas containing nitrogen to a mixed melt containing a group III metal and a flux. The seed substrate has a substrate and a plurality of seed crystals provided on the substrate and composed of the group III nitride semiconductor. In the method, the growing step includes a generation step of generating an initial nucleus composed of the group III nitride semiconductor on each seed crystal; and a growth step of growing the initial nucleus after the generation step. In the generation step, the mixed melt contains calcium.

Abstract: A Group III nitride single crystal growth method is a method for growing a Group III nitride single crystal on a Group III nitride substrate, and includes: repeatedly performing, to form a thickened Group III nitride single crystal on the Group III nitride substrate, a process of: immersing the Group III nitride substrate in a mixed melt containing a Group III metal and Na stored in a crucible; pulling up the Group III nitride substrate from the mixed melt; and heating the Group III nitride substrate, pulled up from the mixed melt, in a nitrogen atmosphere, and the crucible is an alumina crucible containing alumina as a main component and containing an alkali metal other than Na or an alkaline earth metal.

Abstract: An accounting system according to the present invention include: an information display device including a first memory; and at least one first processor coupled to the first memory. The first processor performs first operations. The first operations includes: causing a first camera to image a person, and causes a display to display a code based on physical characteristics peculiar to the imaged person. An information processing device includes a second memory; and at least one second processor coupled to the second memory. The second processor performs second operations. The second operations includes: causing a second camera to image the code displayed by the information display device, acquiring accounting information of the person using the imaged code, and executing accounting processing using the accounting information.

Abstract: According to one or more embodiments, a non-transitory computer-readable medium including a program that, when executed, causes a server to perform functions including: converting a first text into a voice feature amount by inputting the first text into a learned conversion model, wherein the first text is in a different language from a predetermined language, the learned conversion model is pre-learned to convert a second text in the predetermined language into a voice feature amount, and synthesizing a voice from the converted voice feature amount.

Abstract: A matching system that matches requesters with applicants by displaying educational content associated with posted projects. The system includes a first applicant device operated by a first applicant and a computing device.) in communication with the first applicant device and a database. The database stores first disclosure information defining a disclosure range for posted projects and second disclosure information defining a separate, independent disclosure range for associated educational content. In response to a request from the first applicant device, the computing device executes a filtering process that identifies a subset of posted projects permitted for disclosure based on the first disclosure information and identifies a subset of educational content permitted for disclosure based on the second disclosure information.

Abstract: A method for manufacturing a group III nitride semiconductor, the method including a crystal growing step of growing the group III nitride semiconductor on a seed substrate by supplying a gas containing nitrogen into a mixed melt in which a group III metal and a flux are mixed. The seed substrate includes a substrate and a plurality of seed crystals provided on the substrate and including the group III nitride semiconductor, and the seed crystals each include a (10-11) plane on an outer peripheral surface thereof.

Abstract: A semiconductor memory device includes a first wiring, a second wiring, a columnar insulating portion, and a first insulating layer. The first insulating layer includes a first edge. When it is assumed that a position closest to the columnar insulating portion on the first edge is a first position, a position of the first insulating layer, which is different from the first edge and is closest to the columnar insulating portion, is a second position, a virtual line along the first edge is a first virtual line, and a virtual line connecting the first position and the second position is a second virtual line, a crossing angle between the first virtual line and the second virtual line as seen from an inside of the first insulating layer is 90 degrees or more.

Abstract: A matching system that provides targeted advertisements includes a plurality of user devices and a computing device that communicates with each user device and accesses a database. The user devices includes a first user device operated by a user belonging to a first group. The database stores group information identifying each of the plurality of groups, a plurality of pieces of advertisement information, and prohibition information identifying advertisement information which is prohibited from being associated with the first group. The computing device extracts one or more pieces of advertisement information with the user belonging to the first group, excludes advertisement information identified by the prohibition information from extracted advertisement information, associates resulting advertisement information with the user belonging to the first group, and transmits the resulting one or more pieces of advertisement information to the first user device based on the association.

Abstract: An object of the present invention is to provide a method for producing a nucleic acid-introduced cell, in which a transfection efficiency is improved, and to provide a method for producing a useful substance using the nucleic acid-introduced cell. According to the present invention, there is provided a method for producing a nucleic acid-introduced cell, including (a) a treatment step of reducing an unnecessary nucleic acid in a cell-containing solution, and (b) an introduction step of introducing a target nucleic acid into a cell by adding the target nucleic acid to the cell-containing solution.

Abstract: An objective lens unit includes an objective lens, a first rotary member, a second rotary member, and a drive section. The objective lens is provided with a correction ring. The first rotary member is mounted on the objective lens. The second rotary member engages with the first rotary member. The first rotary member has a first engagement portion. The second rotary member has a second engagement portion that is to engage with the first engagement portion. The second engagement portion is disposed at a part in the circumferential direction of the second rotary member. The second rotary member rotates to be positioned at an engagement position or a retraction position. The engagement position is a position where the second engagement portion engages with the first engagement portion. The retraction position is a position where the second engagement portion retracts from the first engagement portion.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: A matching system, an inviter device, and a method to match an inviter and an applicant who applies for an invitation. A computing device that communicates with the inviter device and a first applicant device. The computing device is able to access a database, where the inviter device transmits asset information and disclosure information to the computing device, and can register the asset information and disclosure information transmitted from an inviter device into the database. The computing device can determine, asset information permitted to be disclosed to the first applicant among asset information registered in the database based on corresponding disclosure information. The computing device can provide the first applicant device with the asset information permitted to be disclosed to the first applicant.

Abstract: An object of the present invention is to provide a method for producing a target virus, which is capable of improving a production amount of a virus, and a culture composition which contains an animal cell, a virus, and a culture medium and in which the production amount of the virus is improved. According to the present invention, there is provided a method of producing a target virus, including a virus production step of culturing an animal cell into which an exogenous recombinant nucleic acid encoding a target virus has been introduced, in a culture medium in a state in which a function of BET is suppressed.