Abstract: A Group III nitride semiconductor epitaxial wafer includes: a Group III nitride semiconductor substrate exhibiting n-type conductivity and having a carrier concentration of 1020 cm?3 or more; and a Group III nitride semiconductor film including an epitaxial layer epitaxially grown on the Group III nitride semiconductor substrate, wherein the Group III nitride semiconductor film has a thickness of 1 ?m or more and 30 ?m or less; and wherein the Group III nitride semiconductor substrate has an off-angle of 0.38 degrees or more and 0.6 degrees or less between a normal to a surface of the Group III nitride semiconductor substrate and a c-axis of the Group III nitride semiconductor substrate, and the Group III nitride semiconductor film is provided on the surface of the Group III nitride semiconductor substrate.

Abstract: An information processing apparatus according to the present invention includes: a biometric information acquisition unit that acquires biometric information of a user at an arrival airport; a biometric matching unit that performs a matching process of the biometric information with registered biometric information of a registrant who deposited a baggage with the airline at a departure airport; and a guide unit that outputs guide information including a location of pickup in the arrival airport and a start time of pickup of the baggage associated with the registered biometric information to the user who is authenticated as the same person as the registrant by the matching process.

Abstract: An information processing device according to the present disclosure accepts a request to display an application window from a user wearing a head mounted display, automatically determines, based on a type of an application operated through the application window, a display mode of the application window to be either a first mode in which the application window is displayed at a fixed position in a virtual space of the head mounted display or a second mode in which the application window is displayed at a fixed position on a screen of the head mounted display, and displays the application window in the determined display mode.

Abstract: An information processing apparatus includes an acquisition unit that acquires feature information about a hand or arm, from a captured image of a hand or arm obtained by an imaging unit of a head-mounted display, a calculation unit that calculates a matching degree between feature information about a hand or arm of a user of the head-mounted display registered in advance and the acquired feature information acquired by the acquisition unit, and a determination unit that performs a first determination operation of determining, based on the matching degree, whether or not the hand or arm in the captured image is the hand or arm of the user.

Abstract: An authentication control apparatus according to the present disclosure includes a first detection unit that detects first detection information including at least one of a motion of a terminal apparatus of a user and an action of the user with respect to the terminal apparatus, a second detection unit that detects second detection information that is information related to the first detection information and includes at least one of the motion of the terminal apparatus and the action of the user with respect to the terminal apparatus by a method different from that of the first detection unit, and an authentication control unit that controls authentication processing of the terminal apparatus of the user by collating the first detection information with the second detection information.

Abstract: A group III nitride crystal manufacturing apparatus includes a raw material chamber generating a group III elemental oxide gas, and a growth chamber allowing the group III element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element-containing gas between the seed substrate and an exhaust port for discharging the unreacted group III oxide gas and the nitrogen element-containing gas.

Abstract: A light-emitting device includes a semiconductor laser element, a wavelength conversion member, and a package. The wavelength conversion member includes a wavelength conversion portion and a reflective portion. The wavelength conversion portion includes a light incident surface and a light-emitting surface. The package includes a disposition region. The wavelength conversion member is disposed at a position away in a first direction from a position at which the semiconductor laser element is disposed. The light-emitting surface has a shape that, in a plan view perpendicular to the light-emitting surface, has a first region decreasing in width in a second direction perpendicular to the first direction from the side closest to the semiconductor laser element toward the first direction.

Abstract: An authentication device includes an image acquisition unit, an identification unit, and an authentication unit. The image acquisition unit acquires an image of an eye of a subject. The identification unit identifies the colored pattern of a colored contact lens worn by the subject by comparing a reference image with the image of the eye. The authentication unit identifies the subject, using a feature in a region other than a colored region of the colored pattern in the iris region of the eye.

Abstract: Provided herein are methods for producing quiescent hepatic stellate cells (HSCs) from pluripotent stem cells and compositions thereof. In particular aspects, the HSCs are produced without a cell sorting or enrichment step and under feeder-free and serum-free conditions.

Abstract: A Group III nitride seed crystal substrate for use in a method for producing a large-sized Group III nitride crystal with few defects is provided. A Group III nitride seed crystal substrate for use in a method for producing a Group III nitride crystal, includes: a substrate; and a plurality of Group III nitride seed crystals arranged over the flat surface of a main surface of the substrate.

Abstract: An object of the present invention is to provide a method for improving a proportion of capsids containing a gene of interest GOI in a method for producing a virus, and to provide a method for improving a proportion of capsids containing a gene of interest GOI in a method for introducing a nucleic acid into cells, the method including a nucleic acid introduction step of adding a nucleic acid to a suspension containing cells. According to the present invention, there is provided a method for producing a virus, the method including a nucleic acid introduction step of adding a nucleic acid to a suspension containing cells having a density of 10×106 cells/mL or more, and a culture step of culturing the cells into which the nucleic acid has been introduced, in which the nucleic acid is added in a case where a population cell doubling time of the suspension satisfies 35.4 hours or less.

Abstract: An object of the present invention is to provide a method for manufacturing an adeno-associated virus, which is capable of improving a ratio of an amount of a capsid containing a full-length gene to a total amount of the capsids, and a set of vectors for use in the method for manufacturing an adeno-associated virus. According to the present invention, there is provided a method for manufacturing an adeno-associated virus, the method including a gene transfer step of transferring a first vector containing a Rep gene and a Cap gene and a second vector containing a Rep gene and a Cap gene into a cell and a cell culture step of culturing the cell into which gene transfer has been performed, in which the first vector is different from the second vector, the Rep genes contained in the first vector and the second vector are full-length and of the same serum type, and the Cap genes contained in the first vector and the second vector are full-length and of the same serum type.

Abstract: A second harmonic generation element includes a substrate, a first multilayer film reflecting mirror, a second harmonic generation layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The second harmonic generation layer is disposed on the first multilayer film reflecting mirror. The second harmonic generation layer is made of a SrB4O7 crystal that receives a fundamental wave with a predetermined wavelength and emits a second harmonic wave with a wavelength in an ultraviolet region. The second multilayer film reflecting mirror is formed on the second harmonic generation layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror.

Abstract: A semiconductor storage device of an embodiment has a substrate, a first interconnection, a second interconnection, a channel portion, first charge storage portions, and second charge storage portions. The first interconnection extends in a first direction, and the second interconnection is adjacent to the first interconnection in a second direction intersecting the first direction and extends in the first direction. The channel portion is provided between the first interconnection and the second interconnection and extends in a third direction intersecting the first direction and the second direction. The first charge storage portions are provided between the first interconnection and the channel portion. The second charge storage portions are provided between the second interconnection and the channel portion.

Abstract: Provided is a manufacturing method of a group-III nitride semiconductor capable of improving crystallinity. The manufacturing method of a group-III nitride semiconductor includes: an alkali metal coating step of covering a surface of an alkali metal of a solid form with a group-III metal; a mixed melt generation step of melting the alkali metal coated with the group-III metal along with the carbon to generate a mixed melt; and a crystal growth step of immersing a seed substrate in the mixed melt to grow a group-III nitride semiconductor on the seed substrate under an atmosphere containing nitrogen.

Abstract: Artificial intelligence (AI)-based in-flight assistants and associated systems, devices, and methods are disclosed herein. In some implementations, an in-flight entertainment and communication (IFEC) system provides an AI-based virtual assistant that a passenger can submit various requests or queries. For example, a passenger can ask the virtual assistant to generate an itinerary for their destination, edit documents stored on their personal laptop, order food or other items mid-flight, reach out to a crew member, check lavatory availability, and more. An AI model onboard the airplane can process these requests and generate responses in real-time, even if offline. The virtual assistant can be visually represented by an assistant graphical character on a display and talk to the passenger. Thus, the AI-based virtual assistant can provide an improved in-flight user experience compared to conventional IFEC systems.

Abstract: A method for manufacturing a group III nitride semiconductor includes a growing step of growing the group III nitride semiconductor on a seed substrate by supplying a gas containing nitrogen to a mixed melt containing a group III metal and a flux. The seed substrate has a substrate and a plurality of seed crystals provided on the substrate and composed of the group III nitride semiconductor. In the method, the growing step includes a generation step of generating an initial nucleus composed of the group III nitride semiconductor on each seed crystal; and a growth step of growing the initial nucleus after the generation step. In the generation step, the mixed melt contains calcium.

Abstract: A Group III nitride single crystal growth method is a method for growing a Group III nitride single crystal on a Group III nitride substrate, and includes: repeatedly performing, to form a thickened Group III nitride single crystal on the Group III nitride substrate, a process of: immersing the Group III nitride substrate in a mixed melt containing a Group III metal and Na stored in a crucible; pulling up the Group III nitride substrate from the mixed melt; and heating the Group III nitride substrate, pulled up from the mixed melt, in a nitrogen atmosphere, and the crucible is an alumina crucible containing alumina as a main component and containing an alkali metal other than Na or an alkaline earth metal.

Abstract: An accounting system according to the present invention include: an information display device including a first memory; and at least one first processor coupled to the first memory. The first processor performs first operations. The first operations includes: causing a first camera to image a person, and causes a display to display a code based on physical characteristics peculiar to the imaged person. An information processing device includes a second memory; and at least one second processor coupled to the second memory. The second processor performs second operations. The second operations includes: causing a second camera to image the code displayed by the information display device, acquiring accounting information of the person using the imaged code, and executing accounting processing using the accounting information.

Abstract: According to one or more embodiments, a non-transitory computer-readable medium including a program that, when executed, causes a server to perform functions including: converting a first text into a voice feature amount by inputting the first text into a learned conversion model, wherein the first text is in a different language from a predetermined language, the learned conversion model is pre-learned to convert a second text in the predetermined language into a voice feature amount, and synthesizing a voice from the converted voice feature amount.