Abstract: The present disclosure relates to a current separation method and the like of a nonaqueous lithium power storage element. In the current separation method, the nonaqueous lithium power storage element includes a cell including: a positive electrode precursor that includes a positive electrode active material layer containing lithium carbonate and activated carbon; a negative electrode that includes a negative electrode active material layer containing a negative electrode active material capable of occluding and releasing lithium; a separator arranged between the positive electrode precursor and the negative electrode; and an electrolyte solution. The current separation method includes the step of calculating a capacitor current IC and an electrode reaction current Id of the cell based on voltage and current of the cell that are measured during doping of the cell.

Abstract: A heating apparatus includes: a heating rotator to heat a medium; a heat source including: a glass tube disposed inside the heating rotator to generate radiant heat; and a sealing on each of both ends of the glass tube in an axial direction of the heating rotator; a heater holder to hold the heat source inside the heating rotator; a support having an outer diameter smaller than an inner diameter of the heating rotator to support the heater holder inside the heating rotator; and a gas supply disposed outside an outer end of the heating rotator in the axial direction, the gas supply to supply gas to the sealing through the support in the axial direction, wherein the heating rotator has an air hole facing the sealing.

Abstract: A semiconductor memory device has a chip shape. A stacked body is formed by alternately stacking, in a first direction, a plurality of first insulating layers and a plurality of first conductive layers each of which functions as a control gate of a memory cell transistor. A first columnar body extends in the first direction in the stacked body and includes a first semiconductor portion. An insulating film is provided at an end portion of the semiconductor memory device. A second columnar body extends in the first direction in the insulating film and includes a second semiconductor portion that is shorter than the first semiconductor portion in the first direction. An impurity concentration of the second semiconductor portion at a bottom portion of the second columnar body is higher than that of the first semiconductor portion at an intersection portion between the first columnar body and the first conductive layer.

Abstract: A heating device, an image forming apparatus, and a liquid discharge apparatus. The heating device includes a heating roller having heat sources inside to heat a sheet. The heat sources include three or more first heat sources having a same distribution of thermal intensity and a second heat source having a distribution of thermal intensity different from the distribution of the thermal intensity of the first heat sources, and the second heat source is disposed inside a polygon whose vertices are the first heat sources when viewed from one end of the heating roller in a longitudinal direction of the heating roller. The image forming apparatus includes an image forming device to form an image on a sheet, and the heating device to heat the sheet. The liquid discharge apparatus includes a liquid discharge device to discharge liquid onto a sheet, and the heating device to heat the sheet.

Abstract: A semiconductor memory device includes a stacked body in which a first insulating layer and a first conductive layer are alternately stacked in a first direction. A columnar body includes a first insulating portion extending in the first direction in the stacked body, a first semiconductor portion provided between the first insulating portion and the stacked body, and a third insulating portion provided between a second insulating portion provided between the first semiconductor portion and the stacked body, and the second insulating portion and the stacked body, and has a first end and a second end opposite to the first end. A second conductive layer is provided on the stacked body and is electrically connected to the first semiconductor portion at the first end of the columnar body.

Abstract: A semiconductor memory device includes a substrate, a layer stack, and a pillar. The layer stack is in a first direction above the substrate. The pillar penetrates the layer stack in the first direction. The layer stack includes a first conductor and a first insulator on an upper surface of the first conductor along the first direction. The pillar includes a second insulator extending along an extending direction of the pillar. The second insulator includes a first part located in a first layer in which the first conductor is located and a second part located in a second layer in which the first insulator is located. The first part includes a portion thicker than the second part. A diameter of the pillar in the first layer is larger than a diameter of the pillar in the second layer.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including first layers and second layers in a first direction, forming a hole extending in the first direction in the stacked film, and forming a first insulator on a side face of the stacked film in the hole. The method further includes removing the first insulator in the hole to expose a first part of the side face of the stacked film at a predetermined height in the first direction of the hole and to expose a side face of the first insulator remaining on a second part of the side face of the stacked film at the predetermined height. The method further includes forming a second insulator on the first part of the side face of the stacked film and the side face of the remaining first insulator in the hole.

Abstract: A vehicle brake system, capable of realizing a brake-by-wire construction which can be installed in vehicles in the same manner as conventional brake systems, is provided with a booster device, a master cylinder, wheel brakes, and a hydraulic pressure control device interposed between the master cylinder and the wheel brakes. The system is further provided with a stroke sensor for detecting the moving stroke of a brake pedal, a simulator for applying to the brake pedal a pseudo reaction force corresponding to the moving stroke of the brake pedal, a play or idling component arranged between the booster device and the hydraulic pressure control device for absorbing the moving stroke of the brake pedal by a predetermined amount, and an electronic control device for controlling the hydraulic pressure control device based on an input from the stroke sensor.

Abstract: A vehicle brake system, capable of realizing a brake-by-wire construction which can be installed in vehicles in the same manner as conventional brake systems, is provided with a booster device, a master cylinder, wheel brakes, and a hydraulic pressure control device interposed between the master cylinder and the wheel brakes. The system is further provided with a stroke sensor for detecting the moving stroke of a brake pedal, a simulator for applying to the brake pedal a pseudo reaction force corresponding to the moving stroke of the brake pedal, a play or idling component arranged between the booster device and the hydraulic pressure control device for absorbing the moving stroke of the brake pedal by a predetermined amount, and an electronic control device for controlling the hydraulic pressure control device based on an input from the stroke sensor.

Abstract: A source data latch circuit for latching data which are read-in from a DRAM is provided. A data latch circuit for latching one-byte data generated by a CPU and an overflowing bit storing circuit for storing overflowing data through a three-bit shift are provided. At a composing circuit, data latched by the latch circuit at a previous time and stored in the overflowing bit storing circuit and the present data latched by the latch circuit are composed. At an OR circuit, the composed data and data with respect to which an OR is obtained are written into RAM.

Abstract: An area setting device for setting coordinates of two points in a diagonal direction in one or more areas to be copied by a photocopier utilizing key operation in sequence, in which different colors are used for coordinate display in each direction. The same colors as the coordinate displays are used for coordinate input indicators. All the points are memorized as to whether coordinates have been applied. A key input is accepted for the first point not having coordinates applied, and this converts the memorized condition. Key input acceptance and memory state conversion are repeated for all the points required.