Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Abstract: Please replace the currently pending Abstract with the following amended A solid-state imaging device is provided with a plurality of photoelectric conversion elements, a plurality of current-voltage conversion circuits, a plurality of address event detection circuits, first ground wiring, and second ground wiring. The plurality of photoelectric conversion elements is arranged side by side in a first region. The plurality of current-voltage conversion circuits converts currents output from the plurality of photoelectric conversion elements into voltages, respectively. The plurality of address event detection circuits detects changes in voltages output from the plurality of current-voltage conversion circuits, respectively. The first ground wiring is provided in a second region located outside the first region, and supplies first ground potential to the plurality of photoelectric conversion elements.

Abstract: A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits.

Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Abstract: A solid-state imaging element according to the present disclosure is provided with a first substrate (light reception chip) and a second substrate (detection chip). The first substrate (light reception chip) is provided with a photodiode that photoelectrically converts incident light to generate a photocurrent. The second substrate (detection chip) is provided with a luminance change detection circuit (current-voltage conversion circuit) that detects a change in luminance of the incident light on the basis of a voltage signal converted by a conversion circuit (current-voltage conversion circuit) that converts the photocurrent into the voltage signal, and is bonded to the first substrate (light reception chip). A light shielding unit (light shielding film) provided in at least any one of the first substrate (light reception chip) or the second substrate (detection chip) and shields light between an active element (transistor TR) provided in the second substrate (detection chip) and the photodiode is included.

Abstract: A solid-state image sensor according to the present disclosure includes a photodiode, a conversion circuit (current-voltage conversion circuit), a luminance change detection circuit (comparator), and a light-shielding unit (light-shielding film). The photodiode photoelectrically converts incident light to generate a photocurrent. The conversion circuit (current-voltage conversion circuit) converts the photocurrent into a voltage signal. The luminance change detection circuit (comparator) detects a change in luminance of the incident light on the basis of the voltage signal. The light-shielding unit (light-shielding film) shields incidence of light on the impurity diffusion region included in a circuit that inputs the voltage signal to the luminance change detection circuit (comparator).

Abstract: Please replace the currently pending Abstract with the following amended A solid-state imaging device is provided with a plurality of photoelectric conversion elements, a plurality of current-voltage conversion circuits, a plurality of address event detection circuits, first ground wiring, and second ground wiring. The plurality of photoelectric conversion elements is arranged side by side in a first region. The plurality of current-voltage conversion circuits converts currents output from the plurality of photoelectric conversion elements into voltages, respectively. The plurality of address event detection circuits detects changes in voltages output from the plurality of current-voltage conversion circuits, respectively. The first ground wiring is provided in a second region located outside the first region, and supplies first ground potential to the plurality of photoelectric conversion elements.

Abstract: A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

Abstract: A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The plurality of first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits.

Abstract: An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Abstract: Provided is a sustained-release preparation containing pioglitazone or a salt thereof as an active ingredient and showing superior sustainability. A sustained-release preparation containing pioglitazone or a salt thereof, which shows a dissolution ratio of pioglitazone of average 25-58% at the 2-hour time point, and average 60-100% at the 4-hour time point, in a dissolution test according to the 50 rpm USP Paddle Method and using pH 2.0 KCl/HCl buffer at 37° C. as a test solution.

Abstract: The present invention provides a controlled-release solid preparation containing pioglitazone or a salt thereof as an active ingredient, and having superior sustainability. A controlled-release solid preparation containing pioglitazone or a salt thereof as an active ingredient, which is composed of an immediate-release part and a sustained-release part in combination.

Abstract: Provided is a sustained-release preparation containing pioglitazone or a salt thereof as an active ingredient and showing superior sustainability. A sustained-release preparation containing pioglitazone or a salt thereof, which shows a dissolution ratio of pioglitazone of average 25-58% at the 2-hour time point, and average 60-100% at the 4-hour time point, in a dissolution test according to the 50 rpm USP Paddle Method and using pH 2.0 KCl/HCl buffer at 37° C. as a test solution.

Abstract: Provided is a tablet having a high content of 2-[[6-[(3R)-3-amino-1-piperidinyl]-3,4-dihydro-3-methyl-2,4-dioxo-1(2H)-pyrimidinyl]methyl]-4-fluorobenzonitrile (compound (A)) or a salt thereof as a pharmaceutically active component. A tablet containing compound (A) or a salt thereof, and a fluidizer, which has a compound (A) content of 35-50 weight %.

Abstract: A light sensing element includes a photodiode formed on a semiconductor substrate surface, and a laminated structure formed on the photodiode, wherein the laminated structure includes a first layer formed of a silicon oxide film, a second layer formed on the first layer and formed of a silicon nitride film, and a third layer formed on the second layer and formed of a polysilicon film.

Abstract: The present invention provides a solid preparation containing 2[[6-[(3R)-3-amino-1 -piperidinyl]-3,4-dihydro-3-methyl-2,4-dioxo-1(2H)-pyrimidinyl]methyl]-4-fluorobenzonitrile (compound (A)) or a salt thereof as a pharmaceutically active ingredient. Specifically, the present invention provides a solid preparation containing a granule composed of compound (A) or a salt thereof and an additive (excluding microcrystalline cellulose) and a tablet containing (a) a granule containing compound (A) or a salt thereof and microcrystalline cellulose, and (b) a tableting aid containing magnesium stearate and microcrystalline cellulose.

Abstract: The present invention provides a solid preparation containing 21[[6-[(3R)-3-amino-1-piperidinyl]-3,4-dihydro-3-methyl-2,4-dioxo-1(2H)-pyrimidinyl]methyl]-4-fluorobenzonitrile (compound (A)) or a salt thereof as a pharmaceutically active ingredient. Specifically, the present invention provides a solid preparation containing a granule composed of compound (A) or a salt thereof and an additive (excluding microcrystalline cellulose) and a tablet containing (a) a granule containing compound (A) or a salt thereof and microcrystalline cellulose, and (b) a tableting aid containing magnesium stearate and microcrystalline cellulose.

Abstract: The present invention provides a granulated product having improved granulatability which contains a compound with poor wettability and a surfactant, particularly the granulated product wherein at least about 35% by weight with respect to the total weight of the product does not pass through a 100-mesh sieve, and a method for preparing the granulated product having improved granulatability containing a compound with poor wettability, which comprises adding a surfactant to the compound before or during the granulation, particularly at a weight ratio of about 0.001 to about 2.