Patents by Inventor Yusuke Nagamitsu

Yusuke Nagamitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing method
    Patent number: 11373875
    Abstract: There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: June 28, 2022
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Yusuke Nagamitsu, Takeshi Shima, Takeshi Shimada, Hayato Watanabe
  • PLASMA PROCESSING METHOD
    Publication number: 20210066087
    Abstract: There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.
    Type: Application
    Filed: June 21, 2019
    Publication date: March 4, 2021
    Inventors: Yusuke Nagamitsu, Takeshi Shima, Takeshi Shimada, Hayato Watanabe