Abstract: A sludge receiving facility is provided with upper and lower structures respectively having inner spaces communicating with each other, wherein sludge tanks each having a sludge charging port are provided in the lower structure, and a partition wall configured to partition a carrying-in space of the upper structure from the inner space is provided, the sludge receiving facility including: outside air blowing means; air circulating means configured to enable the inner space and the carrying-in space to communicate with each other; first exhausting means configured to exhaust air from an upper part of the carrying-in space; second exhausting means configured to exhaust air above the sludge charging port; and third exhausting means configured to exhaust air inside the sludge tanks, wherein opening/closing means are respectively provided in the circulating means and the first to third exhausting means.

Abstract: A wet sludge disposal facility is capable of smoothly transferring wet sludge to a kiln inlet part of a dry process kiln by a low feeding pressure and without substantially increasing the moisture content in the wet sludge. The disposal facility is used in a cement clinker manufacturing facility having a preheater for preheating a cement raw material, and a dry process kiln connected to the preheater at the kiln inlet part of the dry process kiln. Wet sludge is transferred to the side of the kiln inlet part by feeding water between the wet sludge and the inner wall surface of the pipe by a water injection apparatus in at least one place between the pressure feed pump and the kiln inlet part.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of the two or three three-terminal light emitting elements.

Abstract: An object of the present invention is to provide a wet sludge disposal method and facility capable of smoothly transferring wet sludge to a kiln inlet part, or the like, of a dry process kiln, by a low feeding pressure and without substantially increasing the moisture content in the wet sludge.

Abstract: A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.

Abstract: A sludge receiving facility is provided with upper and lower structures respectively having inner spaces communicating with each other, wherein sludge tanks each having a sludge charging port are provided in the lower structure, and a partition wall configured to partition a carrying-in space of the upper structure from the inner space is provided, the sludge receiving facility including: outside air blowing means; air circulating means configured to enable the inner space and the carrying-in space to communicate with each other; first exhausting means configured to exhaust air from an upper part of the carrying-in space; second exhausting means configured to exhaust air above the sludge charging port; and third exhausting means configured to exhaust air inside the sludge tanks, wherein opening/closing means are respectively provided in the circulating means and the first to third exhausting means.

Abstract: A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.

Abstract: A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x?0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.