Abstract: A hyper-eutectic aluminum-silicon powder containing extremely fine primary crystal silicon, is prepared by atomizing. First, a molten metal of a hyper-eutectic aluminum-silicon alloy containing phosphorus is prepared. This molten metal or melt is atomized with air or an inert gas and quench-solidified. Aluminum-silicon alloy powder containing primary crystal silicon of not more than 10 .mu.m in crystal grain size is obtained. This aluminum-silicon alloy powder contains at least 12 percent by weight and not more than 50 percent by weight of silicon and at least 0.0005 percent by weight and not more than 0.1 percent by weight of phosphorus. When this hyper-eutectic aluminum-silicon alloy powder is employed, it is possible to prepare a consolidate of powder which has improved mechanical properties, and provides a high yield.

Abstract: An aluminum alloy is melted and sprayed from a nozzle. Solid particles of silicon are sprayed by gas jet simultaneously with spraying of the aluminum alloy. Both the sprayed aluminum alloy and the sprayed solid particles of silicon are deposited and cooled.

Abstract: The invention provides a process for preparing a large-sized P/M aluminum alloy product comprising:extruding at a temperature between 350.degree. and 500.degree. C. and at an extrusion ratio of 2 to 10, aluminum alloy powder consisting essentially of (a) 5 to 30% by weight of Si, (b) 0.5 to 10% by weight of at least one species selected from the group consisting of Cu, Mg, Fe, Ni, Cr, Mn, Mo, Zr and V with the proviso that the total amount of these species cannot exceed 30% by weight, and (c) aluminum in a remaining amount.

Abstract: A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

Abstract: A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

Abstract: Aluminum alloy comprises 10 to 36 wt % of Si, 2 to 10 wt % of at least one metal selected from the group consisting of Fe, Ni, Co, Cr and Mn, and remainder consisting essentially of aluminum. The aluminum alloy further includes 1.0 to 12 wt % of Cu and 0.1 to 3.0 wt % of Mg. In a method for producing the aluminum alloy the steps comprises preparing powder mixtures including Si, at least one of metal selected from the group consisting of Fe, Ni, Co, Cr and Mn, and remainder consisting essentially of Al, producing aluminum alloy powders, compacting the aluminum alloy powders into a shape and hot working the aluminum alloy powder compact.

Abstract: A process for producing an aluminum alloy comprises: producing an aluminum alloy powder, consisting of (A) 10 to 36 wt % of Si, 1 to 12 wt % of Fe, 2 to 10 wt % of at least one of metal selected from the group consisting of Ni, Co, Cr and Mn, reminder of the alloy powder consisting of aluminum, or consisting of (B) 10 to 36 wt % of Si, 2 to 10 wt % of Ni, 2 to 10 wt % of at least one of metal selected from the group consisting of Fe, Co, Cr, and Mn, and remainder of the alloy powder consisting of aluminum; compressing a mass of the powder by either compacting the power or accumulating the powder in a can where in case of compacting the powders are so as to have its actual density ratio of 65% to 90%, and in case of the accumulation the powders are compressed so as to have its actual density ratio of not more than 90%; heating the thus compressed mass of powder in convection type heating furnace at a temperature of 250.degree. C. to 550.degree. C.