Abstract: A component comprising: a first case portion having a tunnel portion having an opening end opening toward an axial direction; and a second case portion having a catch tank portion opening upward, wherein the first case portion and the second case portion face each other such that a bottom portion of the tunnel portion and a bottom portion of the catch tank portion are coupled to each other, an opening area of the opening end of the tunnel portion on the second case portion side is larger than an opening area of the opening end of the tunnel portion on a side opposite to the second case portion side, the tunnel portion as a whole is inclined downward from the second case portion side of the tunnel portion to the side opposite to the second case portion side of the tunnel portion, and the second case portion side of the tunnel portion is inclined downward toward the catch tank portion.

Abstract: Disclosed is an Fe-based electroplated steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more, in which in an intensity profile measured by glow discharge optical emission spectrometry, a peak of emission intensity at wavelengths indicating Si is detected within a range from a surface of the Fe-based electroplating layer to more than 0.2 ?m in a thickness direction and not more than a thickness of the Fe-based electroplating layer, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: Provided is a surface treatment agent capable of imparting superior antifouling property as well as good and durable hydrophilicity to an inorganic substrate. The surface treatment agent is one comprising a pretreatment agent and a hydrophilizing treatment agent and being to be sequentially applied to an inorganic substrate, wherein the pretreatment agent comprises a silane compound having a reactive silyl group and an organic functional group and a polyfunctional monomer, and the polyfunctional monomer has one or more first reactive groups that react with the organic functional group and one or more second reactive groups that react with the hydrophilizing treatment agent.

Abstract: To provide an Fe-based electroplated steel sheet that not only has excellent chemical convertibility or excellent coating appearance when subjected to hot-dip galvanizing, but also has excellent resistance to cracking in resistance welding. Disclosed is an Fe-based plated steel sheet including: a cold-rolled steel sheet having a chemical composition containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on one or both surfaces of the cold-rolled steel sheet with a coating weight per surface of 1.0 g/m2 or more, in which a thickness of an internal oxidation layer is 2.00 ?m or less, and an average value of C concentration in a range of 10 ?m to 20 ?m in a thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: Provided is an alloyed galvanized steel sheet with excellent resistance to cracking in resistance welding at a welded portion, even if crystal orientations of an Fe-based electroplating layer and a cold-rolled steel sheet are integrated at a high ratio at the interface between the Fe-based electroplating layer and the cold-rolled steel sheet. The alloyed galvanized steel sheet has a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % to 3.0 mass %; an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface exceeding 20.0 g/m2, and an alloyed galvanized layer formed on the Fe-based electroplating layer, where crystal orientations of the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet are integrated at a ratio of more than 50% at the interface between the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet.

Abstract: Provided is a steel sheet with excellent resistance to cracking in resistance welding at a welded portion, even if the crystal orientations of an Fe-based electroplating layer and a Si-containing cold-rolled steel sheet are integrated at a high ratio at the interface between the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet. Provided is an Fe-based electroplated steel sheet having a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of more than 20.0 g/m2, where the crystal orientations of the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet are integrated at a ratio of more than 50% at the interface between the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet.

Abstract: Provided is a galvanized steel sheet with excellent resistance to cracking in resistance welding at a welded portion, even if crystal orientations of an Fe-based electroplating layer and a cold-rolled steel sheet are integrated at a high ratio at the interface between the Fe-based electroplating layer and the cold-rolled steel sheet. The galvanized steel sheet has a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % to 3.0 mass %; an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of more than 20.0 g/m2, and a galvanized layer formed on the Fe-based electroplating layer, where crystal orientations of the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet are integrated at a ratio of more than 50 % at the interface between the Fe-based electroplating layer and the Si-containing cold-rolled steel sheet.

Abstract: Disclosed is a galvannealed steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet; and a galvannealed layer formed on the Fe-based electroplating layer, in which in an intensity profile measured by glow discharge optical emission spectrometry, ISi,Fe/ISi,bulk is 0.30 or more, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the interface between the galvannealed layer and the Fe-based electroplating layer towards the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: To provide a steel sheet with excellent resistance to cracking in resistance welding at a welded portion. Disclosed is a galvanized steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more; and a galvanized layer formed on the Fe-based electroplating layer, in which in an intensity profile measured by glow discharge optical emission spectrometry, ISi,Fe/ISi,bulk is 0.50 or more, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m from an interface between the galvanized layer and the Fe-based electroplating layer towards the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: An X-ray diagnosis apparatus according to the present embodiment comprises: an imager configured to image by irradiating X-ray to a subject to acquire a captured image by X-ray imaging and a fluoroscopic image by fluoroscope imaging; and processing circuitry configured to acquire imaging related information obtained within a certain period of time before or after the X-ray imaging, and store in a memory the fluoroscopic image captured at least one of before or after the X-ray imaging based on the imaging related information.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of conductive layers, each of the plurality of conductive layers including a first portion, and a second portion that is thicker than the first portion, a first insulator portion that contacts the second portion of a first conductive layer and the second portion of a second conductive layer, and a second insulator portion that contacts the second portion of a third conductive layer, wherein the second portion of the second conductive layer includes a first sub portion arranged with the second portion of the first conductive layer, and a second sub portion provided between the second portion of the first conductive layer and the second portion of the third conductive layer.

Abstract: An X-ray diagnostic apparatus according to an embodiment includes a couchtop, an irradiation unit, a support member, a first opening, and an X-ray detector. The couchtop is a component on which a subject is placed. The irradiation unit outputs X-rays from above the subject. The support member supports both ends of the couchtop in the lateral direction from below and forms a gap between the support member and the couchtop in a center part corresponding to an area excluding both ends. The first opening is formed at either one or both of the ends of the couchtop in the longitudinal direction and is accessible to the gap. The X-ray detector is provided in the gap through the first opening and detects the X-rays.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, insulating members, first conductive layers, first pillars, and second pillars. The substrate includes a first area, a second area, block regions, and a first dummy block region. The insulating members are arranged at respective boundary portions of the block regions and the first dummy block region. The first conductive layers are partitioned by the insulating members. The first pillars penetrates the first conductive layers in a region where the first area and the block regions overlap. The second pillars penetrates at least one of the first conductive layers in a region where the first area and the first dummy block region overlap.

Abstract: A semiconductor memory device includes a substrate including a first region and a second region arranged in a first direction, conductive layers arranged in a second direction and extending in the first direction, a semiconductor layer disposed in the first region and opposed to the conductive layers, contact electrodes disposed in the second region and electrically connected to the conductive layers, and a first structure connected to a first contact electrode in the contact electrodes and a terrace portion of a first conductive layer in the conductive layers. The first structure includes a first conductive portion, a second conductive portion, and a third conductive portion. The first conductive portion extends in the first direction. The second conductive portion and the third conductive portion are connected to one end portion or the other end portion of the first conductive portion in the first direction and the first conductive layer.

Abstract: An x-ray diagnosis apparatus according to an embodiment includes an x-ray tube holder, a supporter, an ultraviolet ray, a contact portion detector, and an irradiation controller. The x-ray tube holder holds an x-ray tube. The supporter movably supports the x-ray tube holder. The ultraviolet ray emitter is disposed to the x-ray tube holder and emits ultraviolet rays. The contact portion detector detects a contact portion touched by a subject of detection, which is at least one of a subject of examination and an examination technician. The irradiation controller controls the support to move the x-ray tube holder to a position corresponding to the contact portion, and controls the ultraviolet ray emitter to emit the ultraviolet rays toward the contact portion.

Abstract: An X-ray image processing apparatus of an embodiment includes processing circuitry. The processing circuitry acquires fluoroscopy-related information indicating at least one of a fluoroscopic image and a condition for collecting the fluoroscopic image. The processing circuitry evaluates the image quality of the fluoroscopic image based on the fluoroscopy-related information. The processing circuitry outputs identification information identifying whether to save the fluoroscopic image based on the evaluation result.

Abstract: According to one embodiment, an X-ray diagnostic apparatus includes an X-ray tube, an X-ray variable diaphragm, an X-ray detector, and processing circuitry. The X-ray tube irradiates X-rays. The X-ray variable diaphragm limits an irradiation region of the X-rays. The X-ray detector detects the X-rays that have passed through an object. The processing circuitry controls a movement of the X-ray tube, the X-ray detector, and an aperture of the X-ray variable diaphragm such that, when the irradiation region on the X-ray detector moves within an imaging range, a movement velocity of the irradiation region relative to the imaging range is maintained constant.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, insulating members, first conductive layers, first pillars, and second pillars. The substrate includes a first area, a second area, block regions, and a first dummy block region. The insulating members are arranged at respective boundary portions of the block regions and the first dummy block region. The first conductive layers are partitioned by the insulating members. The first pillars penetrates the first conductive layers in a region where the first area and the block regions overlap. The second pillars penetrates at least one of the first conductive layers in a region where the first area and the first dummy block region overlap.

Abstract: A memory device includes a plurality of first electrode layers stacked in a first direction; a plurality of second electrode layers stacked in the first direction and provided in the first direction when viewed from the plurality of first electrode layers; a first columnar body extending in the first direction and piercing the plurality of first electrode layers and the plurality of second electrode layers; a second columnar body extending in the first direction and piercing the plurality of first electrode layers; and a third columnar body extending in the first direction, piercing at least one of the plurality of second electrode layers, and being connected to an end of the second columnar body. The first columnar body includes a first semiconductor layer extending in the first direction. The third columnar body includes a material different from a material of the second columnar body.

Abstract: According to one embodiment, the joint part has a diameter larger than a diameter of the first columnar part and a diameter of the second columnar part. The joint part includes an intermediate semiconductor body continuous with the first semiconductor body and the second semiconductor body. A central axis of the second columnar part is shifted in a first direction along a surface of the foundation layer with respect to a central axis of the first columnar part. A width along the first direction from the central axis of the first columnar part in an upper end of the first columnar part is larger than a width along a second direction opposite to the first direction from the central axis of the first columnar part in the upper end of the first columnar part.