Abstract: A reflective mask blank for EUV lithography, including: a substrate; a conductive film on or above a back surface of the substrate; a reflective layer that reflects EUV light and is on or above a front surface of the substrate; and an absorption layer that absorbs the EUV light and is on or above the reflective layer, where the conductive film has a light transmittance at a wavelength of 1000 nm to 1100 nm of 2.0% or more, a light transmittance at a wavelength of 600 nm to 700 nm of 1.0% or more, and a light transmittance at a wavelength of 400 nm to 500 nm of less than 1.0%.

Abstract: An ophthalmic apparatus of an aspect example includes an image acquiring unit, a first image region identifying processor, and a second image region identifying processor. The image acquiring unit is configured to acquire an anterior segment image constructed based on data collected from an anterior segment of a subject's eye by OCT scanning. The first image region identifying processor is configured to identify a first image region corresponding to a predetermined part of the anterior segment by analyzing a first part of the anterior segment image acquired by the image acquiring unit. The second image region identifying processor is configured to identify a second image region corresponding to the predetermined part based on the first image region identified by the first image region identifying processor, the second image region being inside a second part that includes the first part as a proper subset.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Abstract: An object of the present invention is to provide a novel preventive or therapeutic agent for muscular atrophy. The present invention provides a preventive or therapeutic agent for muscular atrophy containing a Dll4 function inhibitor as an active ingredient. The Dll4 function inhibitor is selected from the group consisting of a binding inhibitor between Dll4 and Notch2, a Dll4 expression inhibitor, or an inhibitor of binding of collagen to LL4.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

Abstract: The purpose of the present invention is to provide a catalyst support with which it is possible to produce a high-quality fibrous carbon nanostructure. The purpose of the present invention is to provide a catalyst support used when producing a fibrous carbon nanostructure, the catalyst support comprising a carrier and a catalyst layer formed on the carrier, the catalyst layer including a metal-containing compound, and the difference ?YI in yellowness expressed by the formula being 3-20, where YIA is the yellowness of the carrier, and YIB is the yellowness of the catalyst support.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Abstract: An ophthalmic apparatus of an embodiment example applies an OCT scan to an anterior segment and constructs an image from acquired data. Further, the ophthalmic apparatus analyzes the image to detect an artifact along an A-scan direction and moves an OCT optical system based on the artifact. Also, the ophthalmic apparatus analyzes the image to detect a corneal image and judges whether an intersection between the artifact and the corneal image is located within a predetermined area. In addition, the ophthalmic apparatus calculates an image quality evaluation value of the image, and controls the OCT optical system to perform an OCT scan of a predetermined pattern if the intersection is located within the area and the image quality evaluation value is equal to or greater than a predetermined threshold.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: An alarm management apparatus of the present disclosure presents a trigger alarm, which should be presented to an operator, to the operator when the trigger alarm is included in an alarm that is received or generated. The alarm management apparatus stores a suppressed alarm related to the trigger alarm, without presenting the suppressed alarm to the operator, when the suppressed alarm is included in the alarm and presents the stored suppressed alarm to the operator based on an operation by the operator.

Abstract: The ophthalmic device 1 according to an exemplary embodiment of the present invention comprises an LCD 39, an OCT unit 250, an inclination information generation unit 231, and a control unit 210. The LCD 39 presents a fixation target to an eye E under examination. The OCT unit 250 applies an OCT scan to an anterior eye part Ea of the eye E under examination, and constructs an image. The inclination information generation unit 231 generates inclination information indicating the inclination state of the anterior eye part Ea that has been drawn in the image constructed by the OCT unit 250. On the basis of the inclination information generated by the inclination information generation unit 231, the control unit 210 controls the LCD 39 to move the fixation target.

Abstract: A scan area setting unit of an exemplary ophthalmic apparatus sets a scan area in a region passing through an iris outer edge. A first scan controller controls an OCT optical system to apply an OCT scan to the scan area. An image quality evaluating unit calculates an image quality evaluation value of an image from the OCT scan. A corner angle image detecting unit analyzes the image to detect a corner angle image. A position judging unit judges whether the corner angle image is located within a first area in an image frame. A second scan controller controls the OCT optical system to apply an OCT scan of a predetermined pattern to the anterior segment, if the image quality evaluation value is equal to or greater than a threshold and the corner angle image is located within the first area.

Abstract: An ophthalmologic apparatus of an embodiment example includes a front image acquiring device, a first search processor, and a second search processor. The front image acquiring device is configured to acquire a front image of a fundus of a subject's eye. The first search processor is configured to search for an interested region corresponding to an interested site of the fundus based on a brightness variation in the front image. The second search processor is configured to search for the interested region by template matching between the front image and a template image in the event that the interested region has not been detected by the first search processor.

Abstract: An alarm management apparatus detects a state transition of a plant based on output information that includes at least an alarm that is output from the plant or an instruction from a user, and changes, in a case where the state transition is detected, first definition information that is definition information on behavior of the alarm during monitoring to second definition information that is the definition information that corresponds to a state of the plant after a transition.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.