Abstract: A basal metabolism estimation device includes: at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: acquire first measurement data related to a left foot and second measurement data related to a right foot; identify a starting timing and an ending timing of a stance phase of each of the left and right feet based on the first and second measurement data; calculate a stride time for one cycle of movement of one of the feet during walking and a degree of asymmetry between the first measurement data in the stance phase of the left foot and the second measurement data in the stance phase of the right foot; and estimate basal metabolism based on the stride time and the degree of asymmetry.

Abstract: An estimation apparatus acquires stance phases of both feet and estimates a risk of abnormality of a lower limb on the basis of the difference between the stance phases of the both feet.

Abstract: The present invention facilitates adjustment of the strength of an elastic orthotic that assists the movement of an orthotics user by whom the elastic orthotic is worn. This calculation device for calculating the optimum elastic strength of an elastic orthotic comprises a storage unit in which elastic strength and kinematic properties established through experiments in which a plurality of people wear elastic orthotics are stored in advance, and a mathematical optimization processing unit that calculates the optimal elastic strength on the basis of a prescribed evaluation index on the basis of the kinematic constraint condition of an orthotics user and the elastic strength and kinematic properties.

Abstract: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include forming a foundation film on a patterning film. The foundation film includes a reaction initiator to produce at least one of an acid and a base. The method can include forming an imprint film having an uneven configuration by coating an imprint material onto the foundation film and by causing a template to contact the imprint material. The method can include increasing an etching rate of a first portion of the imprint film higher than a second portion by introducing the at least one of acid and base into the first portion. The first portion is on the foundation film side. The second portion is a portion excluding the first portion. The method can include patterning the patterning film using a protruding portion of the uneven configuration as a mask.