Patents by Inventor Yusuke SHIRAYANAGI

Yusuke SHIRAYANAGI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230094213
    Abstract: An optical scanning device includes a reflector as a MEMS mirror having a reflection surface of a metal film, a support body, a drive beam, and a drive unit. The support body is disposed to be spaced from the reflector so as to surround the reflector. The drive beam connects the reflector and the support body. A first protection film is formed all over opposite side surfaces including side wall surfaces of a second semiconductor layer, as well as an upper surface and a lower surface, in the drive beam. As the first protection film, a silicon oxide film, a silicon nitride film, an alumina film, or a titania film is formed by an atomic layer deposition method.
    Type: Application
    Filed: May 14, 2020
    Publication date: March 30, 2023
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yusuke SHIRAYANAGI, Yoshitaka KAJIYAMA
  • Publication number: 20220091410
    Abstract: An optical scanning device includes a first structure and a second structure. The first structure includes a support, a driver, a first columnar body, a driving section, and a pair of beams. The support includes a support body and a flat section. The pair of beams connects the driver and the flat section. The driving section includes a coil, a pair of electrode pads, and a magnet. The second structure is provided with a reflector.
    Type: Application
    Filed: April 3, 2019
    Publication date: March 24, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yoshitaka KAJIYAMA, Yoshiaki HIRATA, Yusuke SHIRAYANAGI, Kozo ISHIDA
  • Publication number: 20170278998
    Abstract: A manufacturing method for a solar cell includes a step of forming a p-type diffusion layer on one principal surface side of an n-type silicon substrate and forming an n-type silicon substrate having a pn junction, a step of forming a laminated film of a silicon oxide film and a silicon nitride film as a passivation film on a surface on a side of a light receiving surface that is an n type, a step of forming an open region in the passivation film, a step of diffusing n-type impurities with respect to the open region of the passivation film by using the passivation film as a mask to form a high-concentration diffusion region, and a step of forming a metal electrode selectively in the high-concentration diffusion region that is exposed in the open region of the passivation film.
    Type: Application
    Filed: March 4, 2015
    Publication date: September 28, 2017
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hiroya YAMARIN, Yusuke SHIRAYANAGI