Abstract: A sensor including: a semiconductor substrate (41) having a first surface (S1) and a second surface (S2) opposed to each other, and including an avalanche photodiode; an on-chip lens (71) provided on side of the first surface (S1) of the semiconductor substrate (41); a first reflective member (73) provided on the on-chip lens (71); and a wiring layer (42) provided on side of the second surface (S2) of the semiconductor substrate (41), and including a second reflective member (104).

Abstract: Provided are a solid-state imaging device and an electronic device that have high-sensitivity pixels while curbing deterioration in image quality. A solid-state imaging device according to one aspect of the present disclosure includes a first substrate including a first semiconductor substrate having a first surface and a second surface that is opposite to the first surface and on which light is incident, a plurality of pixels that is provided in the first semiconductor substrate and performs photoelectric conversion, and a first uneven structure that is provided on the first surface of the first semiconductor substrate and includes a material different from a material of the first semiconductor substrate, and a second substrate including a readout circuit that is bonded to the first substrate on the first surface side and outputs a pixel signal based on electric charge output from the plurality of pixels.

Abstract: A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit.

Abstract: A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit.

Abstract: It is an object to provide a solid-state imaging apparatus and a distance measurement system that can detect high-frequency pulsed light. The solid-state imaging apparatus includes a plurality of pixels, a drive section, and a time measurement section. Each of the plurality of pixels has a light-receiving element that converts received light into an electric signal. The drive section drives the plurality of pixels by shifting operation timings of the light-receiving elements. The time measurement section is provided such that the electric signal is input from each of the plurality of pixels and measures the time until light emitted from a light source is reflected by a subject and received by the light-receiving element on the basis of the input of the electric signal.

Abstract: A sensor chip of an embodiment of the present disclosure includes: a semiconductor substrate including a pixel array section in which a plurality of pixels is arranged in an array; a light receiving element provided in the semiconductor substrate for each of the pixels and including a multiplier region in which avalanche multiplication of carriers is caused by a high electric field region; and a first pixel separation section provided between the pixels, the first pixel separation section extending from one surface of the semiconductor substrate toward another surface thereof opposed to the one surface, and having a bottom in the semiconductor substrate.

Abstract: A sensor including: a semiconductor substrate (41) having a first surface (S1) and a second surface (S2) opposed to each other, and including an avalanche photodiode; an on-chip lens (71) provided on side of the first surface (S1) of the semiconductor substrate (41); a first reflective member (73) provided on the on-chip lens (71); and a wiring layer (42) provided on side of the second surface (S2) of the semiconductor substrate (41), and including a second reflective member (104).

Abstract: The present technology relates to a solid-state imaging device, a distance measurement device, and a manufacturing method that make it possible to improve condensing efficiency. Provided is a solid-state imaging device including: a pixel unit in which a plurality of pixels each having a light detection unit are arranged; a micro lens formed on a light incident surface side of the light detection unit for each of the pixels; and a light-shielding unit that is formed around the micro lens and shields light, wherein the micro lens is formed inside an opening part provided in the light-shielding part. The present technology is applicable to, for example, CMOS image sensors.

Abstract: A friction plate (11) includes a plate (1A) with a disc shape and a friction material (F1, F2) that is fixed to aside face (1a) of the plate (1A). The friction material (F1, F2) is disposed so that one or both of an inner peripheral side and an outer peripheral side is nonuniform in an inner and outer peripheral direction with respect to a circumferential direction around a center (CT1) of the plate (1A). Thus, there is an increase in the amount of lubrication oil that is fed to a surface of friction material segments (F1, F2) and there is an increase in a separation force in an axial direction between a friction plate (11) and a separator plate or an end plate.