Abstract: An ?-sialon phosphor represented by general formula: MxEuy(Si,Al)12(O,N)16, where M represents at least one or more elements selected from Li, Mg, Ca, Y and a lanthanoid (excluding La and Ce), 0<x, and 0<y, where the phosphor includes, as a host crystal, a crystal structure identical to that of an ?-sialon crystal phase, and the phosphor has a bulk density of 1.00 g/cm3 or more and 1.80 g/cm3 or less. Also provided is a light-emitting element including the ?-sialon phosphor and a semiconductor light-emitting element capable of exciting the ?-sialon phosphor.

Abstract: A phosphor which has a main crystal phase having the same crystal structure as that of CaAlSiN3, wherein the phosphor satisfies conditions of a span value (d90?d10)/d50 of 1.70 or less and a d50 of 10.0 ?m or less, as represented with d10, d50, and d90 on a volume frequency measured according to a laser diffraction method; wherein the d10, d50, and d90 on a volume frequency in a particle distribution measured are each a measured by loading 0.5 g of a phosphor into 100 ml of a solution of 0.05% by weight of sodium hexametaphosphate mixed in ion exchange water, and subjecting the resultant to a dispersing treatment for 3 minutes with an ultrasonic homogenizer at an oscillation frequency of 19.5±1 kHz, a chip size of 20?, and an amplitude of vibration of 32±2 ?m, with a chip placed at a central portion.

Abstract: A threaded connection for steel pipe is provided that prevents cross-threading and provides good compression load resistance. A threaded connection (10) includes a pin (30) and a box (40). The male thread stabbing flank (34) of the pin (30) includes two male thread stabbing flank portions (341) and (342). The male thread stabbing flank portion (341) is located farther from the pipe axis (X) of the steel pipe (20) and has a stabbing flank angle (?1) of ?10 to 15 degrees. The male thread stabbing flank portion (342) is located closer to the pipe axis (X) and has a stabbing flank angle (?2) of 20 to 60 degrees. The female thread stabbing flank (44) of the box (40) includes two female thread stabbing flank portions (441) and (442). The female thread stabbing flank portion (441) is located farther from the pipe axis (X) and has a stabbing flank angle (?1) equal to the stabbing flank angle (?1) of the male thread stabbing flank portion (341).

Abstract: A phosphor having a main crystal phase having a crystal structure identical to that of CaAlSiN3, and including a Ca element partially replaced with an Eu element, wherein the phosphor has a median size d50 of 12.0 ?m or more and 22.0 ?m or less, as measured according to a laser diffraction scattering method, and has a specific surface area of 1.50 m2/g or more and 10.00 m2/g or less, as measured according to a BET method.

Abstract: An ?-sialon phosphor represented by general formula: MxEuy(Si,Al)12(O,N)16, where M represents at least one or more elements selected from Li, Mg, Ca, Y and a lanthanoid (excluding La and Ce), 0<x, and 0<y, where the phosphor includes, as a host crystal, a crystal structure identical to that of an ?-sialon crystal phase, and the phosphor has a bulk density of 1.00 g/cm3 or more and 1.80 g/cm3 or less. Also provided is a light-emitting element including the ?-sialon phosphor and a semiconductor light-emitting element capable of exciting the ?-sialon phosphor.

Abstract: An object of the present invention is to provide a red phosphor having improved luminance. A further object of the present invention is to provide a light emitting device having higher luminance by using the red phosphor. There is provided a phosphor having the main crystal phase represented by the general formula: MAlSiN3 in which the M element(s) represent one or more elements selected from the group consisting of Mg, Ca, Sr, and Ba, the main crystal phase being composed of only CaAlSiN3 or having the same crystal structure as that of CaAlSiN3, and some of the M element(s) being substituted with an Eu element, wherein the phosphor contains W (tungsten) in an amount of 3 ppm or more and 500 ppm or less, based on the total mass of the phosphor.

Abstract: A ?-sialon phosphor represented by general formula: Si6?zAlzOzN8?z (0<z<4.2) has as a host crystal, a crystal structure identical to that of a ?-sialon crystal phase and having a bulk density of 0.80 g/cm3 or more and 1.60 g/cm3 or less. Also, a light-emitting element includes the ?-sialon phosphor and a semiconductor light-emitting element capable of exciting the ?-sialon phosphor.

Abstract: A red phosphor represented by general formula: MSiAlN3, wherein M is at least one or more elements selected from Mg, Ca, Sr and Ba, and is partially replaced with Eu and has, as a host crystal, a crystal structure identical to that of a CaAlSiN3 crystal phase, and the phosphor has a bulk density of 0.70 g/cm3 or more and 2.30 g/cm3 or less. There is also provided a light-emitting element including the red phosphor and a semiconductor light-emitting element capable of exciting the red phosphor.

Abstract: What is provided is an electric resistance welded steel pipe manufacturing device that is configured to perform welding while forming a strip-shaped steel sheet in a tubular shape and supplying a plasma flow to a pair of abutment end surfaces to perform shielding. The electric resistance welded steel pipe manufacturing device includes a mandrel; and a plasma flow feeder that is provided in the mandrel to supply the plasma flow.

Abstract: The purpose of the invention is to both improve the luminance of a SCASN-based phosphor and achieve deep-color rendering properties. Provided is a red phosphor having a main crystal phase having the same crystal structure as a crystal structure of CaAlSiN3, the main crystal phase represented by the general formula MAlSiN3, wherein an internal quantum efficiency, as measured when the red phosphor is excited by light having a wavelength of 455 nm, is 71% or more, and M in the general formula represents an element group containing at least three elements selected from Eu, Sr, Mg, Ca, and Ba, the element group containing Eu, Sr, and Ca as essentials, and a Eu content is 4.5 mass % or more and 7.0 mass % or less, a Sr content is 34.0 mass % or more and 42.0 mass % or less, and a Ca content is 0.8 mass % or more and 3.0 mass % or less.

Abstract: A threaded connection for steel pipe is provided that prevents cross-threading and provides good compression load resistance. A threaded connection (10) includes a pin (30) and a box (40). The male thread stabbing flank (34) of the pin (30) includes two male thread stabbing flank portions (341) and (342). The male thread stabbing flank portion (341) is located farther from the pipe axis (X) of the steel pipe (20) and has a stabbing flank angle (?1) of ?10 to 15 degrees. The male thread stabbing flank portion (342) is located closer to the pipe axis (X) and has a stabbing flank angle (?2) of 20 to 60 degrees. The female thread stabbing flank (44) of the box (40) includes two female thread stabbing flank portions (441) and (442). The female thread stabbing flank portion (441) is located farther from the pipe axis (X) and has a stabbing flank angle (?1) equal to the stabbing flank angle (?1) of the male thread stabbing flank portion (341).

Abstract: Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN3-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiN3 crystal as the host crystal, a strontium nitride containing SrN, Sr2N, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Abstract: An object of the present invention is to provide a red phosphor having improved luminance. A further object of the present invention is to provide a light emitting device having higher luminance by using the red phosphor. There is provided a phosphor having the main crystal phase represented by the general formula: MAlSiN3 in which the M element(s) represent one or more elements selected from the group consisting of Mg, Ca, Sr, and Ba, the main crystal phase being composed of only CaAlSiN3 or having the same crystal structure as that of CaAlSiN3, and some of the M element(s) being substituted with an Eu element, wherein the phosphor contains W (tungsten) in an amount of 3 ppm or more and 500 ppm or less, based on the total mass of the phosphor.

Abstract: Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN3-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiN3 crystal as the host crystal, a strontium nitride containing SrN, Sr2N, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A brain information output apparatus includes an intention determination information storage unit in which two or more pieces of intention determination information can be stored, with each intention determination information including a pair of an intention identifier, and a learning feature amount group including one or more feature amounts extracted from second learning data that is obtained by converting first learning data into intracerebral brain activity data, the first leaning data being acquired from the outside of the cranium of a user when the user performs a trial according to one intention; a first brain activity data acquiring unit that acquires first brain activity data from the outside of the cranium of a user; a second brain activity data acquiring unit that converts the first brain activity data to intracerebral brain activity data, and acquires second brain activity data; a feature amount group acquiring unit that acquires, from the second brain activity data, an input feature amount group

Abstract: A method of producing a turbine engine rotor includes: joining a first rotor disc (25H) and an intermediate member (26) together by electronic beam welding, the first rotor disc (25H) being formed of a precipitation hardened Ni-based superalloy, the intermediate member (26) being formed of a solid solution strengthened Ni-based superalloy; performing age-hardening treatment on the joined body at a first temperature which is a suitable temperature for age-hardening the precipitation hardened Ni-based superalloy; joining the intermediate member (26) and a second rotor disc (25L) together by electronic beam welding, the second rotor disc (25L) being formed of a steel; and performing annealing treatment on the joined body at a second temperature which is a suitable temperature for annealing the steel.

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A brain information output apparatus includes an intention determination information storage unit in which two or more pieces of intention determination information can be stored, with each intention determination information including a pair of an intention identifier, and a learning feature amount group including one or more feature amounts extracted from second learning data that is obtained by converting first learning data into intracerebral brain activity data, the first leaning data being acquired from the outside of the cranium of a user when the user performs a trial according to one intention; a first brain activity data acquiring unit that acquires first brain activity data from the outside of the cranium of a user; a second brain activity data acquiring unit that converts the first brain activity data to intracerebral brain activity data, and acquires second brain activity data; a feature amount group acquiring unit that acquires, from the second brain activity data, an input feature amount group

Abstract: A method of arranging a plurality of image forming sections, each of which includes a developing device and a cleaning device. The method includes arranging the plurality of image forming sections side by side along an inclined image carrier; and positioning the cleaning device above the developing device of other image forming sections in one of nearby ones of the plurality of image forming sections.