Abstract: A plasma processing apparatus in which each of a plurality of source gas supply paths includes a first valve, a second valve disposed on an upstream side of the first valve, a flow rate regulator disposed between the first valve and the second valve, and a connection unit between the source gas supply path and an inert gas supply path. For each of the source gas supply paths, leakage in the first valve is sequentially determined, in a first inspection step, using a flow rate of the inert gas passing through the flow rate regulator, and in a second inspection step of, supplying the inert gas and detecting the leakage of the first valve on the source gas supply path using a change amount of a pressure of the inert gas if it is not determined in the first inspection step that there is a leakage in the first valve.

Abstract: A laser processing apparatus includes: a laser oscillator configured to oscillate a laser pulse; a first laser deflection unit configured to deflect the laser pulse emitted from the laser oscillator in a two-dimensional direction; a second laser deflection unit having a slower operation speed and configured to deflect the laser pulse emitted from the first laser deflection unit in a two-dimensional direction on a same plane; a laser oscillation control unit configured to control the laser oscillator; and first and second laser deflection control units respectively configured to control operations of the first and second laser deflection units. The first laser deflection control unit controls the first laser deflection unit to successively irradiate the laser pulse to multiple sites along a predetermined track in each of the processing positions in turn, and to change energy of the laser pulse emitted therefrom in a middle of repeated irradiation.