Abstract: A semiconductor device includes: a wiring substrate; a semiconductor chip mounted on the wiring substrate; a heat release sheet arranged on the semiconductor chip to cover the entire semiconductor chip and having a larger area than an area of the semiconductor chip; and a cover member which covers the semiconductor chip and the heat release sheet and to which the heat release sheet is fixed. The cover member has a first portion facing the semiconductor chip, a flange portion arranged in a periphery of the first portion and bonded and fixed onto the wiring substrate, and a second portion arranged between the first portion and the flange portion. In a plan view of the cover member viewed from the heat release sheet, the heat release sheet is bonded/fixed to the cover member through a bonding member partially arranged between the heat release sheet and the cover member.

Abstract: A semiconductor device includes: a wiring substrate; a semiconductor chip mounted on the wiring substrate; a heat release sheet arranged on the semiconductor chip to cover the entire semiconductor chip and having a larger area than an area of the semiconductor chip; and a cover member which covers the semiconductor chip and the heat release sheet and to which the heat release sheet is fixed. The cover member has a first portion facing the semiconductor chip, a flange portion arranged in a periphery of the first portion and bonded and fixed onto the wiring substrate, and a second portion arranged between the first portion and the flange portion. In a plan view of the cover member viewed from the heat release sheet, the heat release sheet is bonded/fixed to the cover member through a bonding member partially arranged between the heat release sheet and the cover member.

Abstract: The semiconductor device includes a wiring substrate, a first and second semiconductor chips, and the heat sink. The wiring substrate has a first surface. The first and second semiconductor chips are disposed on the first surface. The heat sink is disposed on the first surface so as to cover the first semiconductor chip. The heat sink has a second surface and the third surface opposite the first surface. The second surface faces the first surface. The heat sink has a first cut-out portion. The first cut-out portion is formed at a position overlapping with the second semiconductor chip in plan view, and penetrates the heat sink in a direction from the third surface toward the second surface. The second surface is joined to at least four corners of the first surface.

Abstract: The semiconductor device includes a wiring substrate, a first and second semiconductor chips, and the heat sink. The wiring substrate has a first surface. The first and second semiconductor chips are disposed on the first surface. The heat sink is disposed on the first surface so as to cover the first semiconductor chip. The heat sink has a second surface and the third surface opposite the first surface. The second surface faces the first surface. The heat sink has a first cut-out portion. The first cut-out portion is formed at a position overlapping with the second semiconductor chip in plan view, and penetrates the heat sink in a direction from the third surface toward the second surface. The second surface is joined to at least four corners of the first surface.

Abstract: A semiconductor device includes a memory component, which is a semiconductor component (a semiconductor chip or a semiconductor package), to be mounted over an upper surface of a wiring substrate. In addition, in the upper surface, a distance between the memory component and a first substrate side of the upper surface is smaller than a distance between the memory component and a second substrate side of the upper surface. In addition, in the upper surface, a dam portion is formed between the memory component and the first substrate side.

Abstract: A semiconductor device includes a memory component, which is a semiconductor component (a semiconductor chip or a semiconductor package), to be mounted over an upper surface of a wiring substrate. In addition, in the upper surface, a distance between the memory component and a first substrate side of the upper surface is smaller than a distance between the memory component and a second substrate side of the upper surface. In addition, in the upper surface, a dam portion is formed between the memory component and the first substrate side.

Abstract: It is aimed at improving the reliability of a semiconductor device. In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.

Abstract: It is aimed at improving the reliability of a semiconductor device. In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.