Abstract: A motor-driven compressor includes a rotary shaft, an electric motor, a compression unit, an inverter, a housing, and an inverter case. The housing includes a housing end wall and a housing circumferential wall, which extends from a housing end wall in an axial direction of the rotary shaft. The inverter case includes a case end wall, which extends in the axial direction from the case end wall. The seal circumferential wall includes a proximal end connected to the case end wall and an end face located at a distal end. The housing circumferential wall includes an opposed surface that is opposed to the end face. An annular seal member is provided between the seal circumferential wall and the housing circumferential wall. The seal member extends in a radial direction of the rotary shaft between the end face and the opposed surface.

Abstract: Provided is a journal bearing structure including: a journal bearing that supports a rotary shaft by an inner circumferential surface; and a bearing housing that holds an outer circumferential surface of the journal bearing by the inner circumferential surface, the journal bearing has an oil supply hole through which the inner circumferential surface and the outer circumferential surface communicate with each other, the bearing housing has an oil supply hole opened to an inner circumferential surface, and an oil supply groove extending in a circumferential direction about an axis line and configured to guide a lubricant discharged from the oil supply hole to the oil supply hole is formed in the inner circumferential surface of the bearing housing.

Abstract: In a switch circuit for use in a vehicle, conduction between a drain electrode and a gate electrode of each of a first main transistor and a second main transistor is switched on or off depending on a voltage between the gate electrode and a source electrode. A first surge protection device is connected between the drain electrodes of the first main transistor and the second main transistor. The first surge protection device keeps a voltage that is applied to the first surge protection device at a first predetermined voltage or lower. A sub transistor is provided between the gate electrodes and the source electrodes of the first main transistor and the second main transistor. The sub transistor is turned on when the first main transistor and the second main transistor are turned off.

Abstract: Provided is a power supply device configured to diagnose circuit operation, and identify, if a defect is found in the diagnosis, the circuit component that is the cause. The power supply device includes: a switch that is disposed in a power supply path leading from a main power source to a load, and is configured to bring into conduction and interrupt the power supply path; a downstream sensing means for sensing a power supply state of a load-side power supply path between the switch and the load; a comparing means for comparing a downstream voltage of the load-side power supply path, with a predetermined threshold voltage; and a control unit. The control unit includes: a switch control means for turning the switch on/off; and a conduction determination means for determining whether the switch is in an ON or OFF state based on the output of the downstream sensing means.

Abstract: An overcurrent protection circuit that can cope even with a case where a ground fault occurs in a mask time period for overcurrent detection. The overcurrent protection circuit detects, when a switching element is on, a differential voltage value between both ends of the switching element that is caused by an electric current flowing therethrough, and turns off the switching element when the detected differential voltage value is larger than a predetermined voltage value. A detection circuit that detects respective voltage values at both ends of the switching element, and means for preventing the switching element from being turned on if either of the respective voltage values detected by the detection circuit is less than a predetermined value.

Abstract: In a switch circuit for use in a vehicle, conduction between a drain electrode and a gate electrode of each of a first main transistor and a second main transistor is switched on or off depending on a voltage between the gate electrode and a source electrode. A first surge protection device is connected between the drain electrodes of the first main transistor and the second main transistor. The first surge protection device keeps a voltage that is applied to the first surge protection device at a first predetermined voltage or lower. A sub transistor is provided between the gate electrodes and the source electrodes of the first main transistor and the second main transistor. The sub transistor is turned on when the first main transistor and the second main transistor are turned off.

Abstract: A current flows between the drains of FETs, which function as a switch. A first constant current circuit causes a constant current to flow from the FET side of a resistor to the other side thereof. A first comparator outputs a high level voltage to the control section if the electric potential at the drain of the FET is higher than the electric potential at one end, on the first constant current circuit side, of the resistor. Furthermore, the first comparator outputs a low level voltage to the control section if the electric potential at the drain of the FET is lower than the electric potential at one end, on the first constant current circuit side, of the resistor. The control section turns the FETs off when the first comparator outputs the low level voltage. Furthermore, the control section changes the current that is caused to flow through the resistor by the first constant current circuit.

Abstract: A semiconductor device is provided in which burning of a semiconductor element can be prevented without incorporating a fuse. The semiconductor device, which includes a plurality of semiconductor elements that are connected in parallel between a direct current power source and a load, is configured to simultaneously turn ON or OFF the plurality of semiconductor elements. The semiconductor device includes a voltage detection means for detecting a voltage value across a fixed potential and a connection node for the plurality of semiconductor elements and for the load, a determining means for determining, if the semiconductor elements are OFF, whether or not a voltage value detected by the voltage detection means is higher than a predetermined voltage value; and a means for turning the plurality of semiconductor elements ON when the unit determines that the detected voltage value is higher than the predetermined voltage value.

Abstract: Provided is a power supply device configured to diagnose circuit operation, and identify, if a defect is found in the diagnosis, the circuit component that is the cause. The power supply device includes: a switch that is disposed in a power supply path leading from a main power source to a load, and is configured to bring into conduction and interrupt the power supply path; a downstream sensing means for sensing a power supply state of a load-side power supply path between the switch and the load; a comparing means for comparing a downstream voltage of the load-side power supply path, with a predetermined threshold voltage; and a control unit. The control unit includes: a switch control means for turning the switch on/off; and a conduction determination means for determining whether the switch is in an ON or OFF state based on the output of the downstream sensing means.

Abstract: A current flows between the drains of FETs, which function as a switch. A first constant current circuit causes a constant current to flow from the FET side of a resistor to the other side thereof. A first comparator outputs a high level voltage to the control section if the electric potential at the drain of the FET is higher than the electric potential at one end, on the first constant current circuit side, of the resistor. Furthermore, the first comparator outputs a low level voltage to the control section if the electric potential at the drain of the FET is lower than the electric potential at one end, on the first constant current circuit side, of the resistor. The control section turns the FETs off when the first comparator outputs the low level voltage. Furthermore, the control section changes the current that is caused to flow through the resistor by the first constant current circuit.

Abstract: A semiconductor device is provided in which burning of a semiconductor element can be prevented without incorporating a fuse. The semiconductor device, which includes a plurality of semiconductor elements that are connected in parallel between a direct current power source and a load, is configured to simultaneously turn ON or OFF the plurality of semiconductor elements. The semiconductor device includes a voltage detection means for detecting a voltage value across a fixed potential and a connection node for the plurality of semiconductor elements and for the load, a determining means for determining, if the semiconductor elements are OFF, whether or not a voltage value detected by the voltage detection means is higher than a predetermined voltage value; and a means for turning the plurality of semiconductor elements ON when the unit determines that the detected voltage value is higher than the predetermined voltage value.

Abstract: An overcurrent protection circuit that can cope even with a case where a ground fault occurs in a mask time period for overcurrent detection. The overcurrent protection circuit detects, when a switching element is on, a differential voltage value between both ends of the switching element that is caused by an electric current flowing therethrough, and turns off the switching element when the detected differential voltage value is larger than a predetermined voltage value. A detection circuit that detects respective voltage values at both ends of the switching element, and means for preventing the switching element from being turned on if either of the respective voltage values detected by the detection circuit is less than a predetermined value.

Abstract: A pressure container having improved reliability of pressure-resistant performance and sealing performance at a connecting portion between outer shells, and a buoyant body and an exploratory apparatus provided therewith. a pressure container includes a semispherical first outer shell made of ceramics, a semispherical second outer shell made of ceramics, a straight cylindrical third outer shell made of ceramics, and annular first and second connecting bodies interposed between the first outer shell and the third outer shell and between the second outer shell and the third outer shell, and made of materials at least one of which has an elastic modulus smaller than those of the first to the third outer shells.

Abstract: Disclosed herein are a crustal core sampler, by which a crustal core sample can be cored in a state coated with a flow-able coating material free of any contamination, and a method of coring a core sample using this crustal core sampler. The crustal core sampler comprises a drilling mechanism and a barrel, wherein the barrel is equipped with a flow-able coating material-ejecting mechanism, and a columnar crustal core portion is coated with a flow-able coating material. Alternatively, the crustal core sampler is constructed by a drill pipe and an inner barrel, wherein the inner barrel is equipped with an inner barrel body, a core elevator, a channel-forming member for forming a flow-able coating material-running channel and flow-able coating material-ejecting openings, and a columnar crustal core portion is coated with a flow-able coating material.

Abstract: Disclosed herein are a crustal core sampler, by which a crustal core sample can be cored in a state coated with a flow-able coating material free of any contamination, and a method of coring a core sample using this crustal core sampler. The crustal core sampler comprises a drilling mechanism and a barrel, wherein the barrel is equipped with a flow-able coating material-ejecting mechanism, and a columnar crustal core portion is coated with a flow-able coating material. Alternatively, the crustal core sampler is constructed by a drill pipe and an inner barrel, wherein the inner barrel is equipped with an inner barrel body, a core elevator, a channel-forming member for forming a flow-able coating material-running channel and flow-able coating material-ejecting openings, and a columnar crustal core portion is coated with a flow-able coating material.