Abstract: The present disclosure provides a semiconductor device capable of reducing wiring resistance by using a stripe wire. The semiconductor device includes: a source pad electrode formed on a second interlayer insulating layer; a plurality of source extraction electrodes extracted in a first direction from the source pad electrode; a drain pad electrode formed on the second interlayer insulating layer; and a plurality of drain extraction electrodes extracted in the first direction from the drain pad electrode. The source pad electrode and the plurality of source extraction electrodes are electrically connected to a plurality of source wires of stripe wire covered by the second interlayer insulating layer. The drain pad electrode and the plurality of drain extraction electrodes are electrically connected to a plurality of drain wires of the stripe wire. The plurality of drain extraction electrodes are engaged with the plurality of source extraction electrodes.

Abstract: A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.

Abstract: An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2?·fc·C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

Abstract: The present disclosure provides a semiconductor device capable of reducing wiring resistance by using a stripe wire. The semiconductor device includes: a source pad electrode formed on a second interlayer insulating layer; a plurality of source extraction electrodes extracted in a first direction from the source pad electrode; a drain pad electrode formed on the second interlayer insulating layer; and a plurality of drain extraction electrodes extracted in the first direction from the drain pad electrode. The source pad electrode and the plurality of source extraction electrodes are electrically connected to a plurality of source wires of stripe wire covered by the second interlayer insulating layer. The drain pad electrode and the plurality of drain extraction electrodes are electrically connected to a plurality of drain wires of the stripe wire. The plurality of drain extraction electrodes are engaged with the plurality of source extraction electrodes.

Abstract: An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2?·fc·C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

Abstract: An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2?·fc·C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

Abstract: This power transmission apparatus transmits power to a power reception apparatus by means of a magnetic field resonance system by supplying an output AC voltage (VE) of a class E amplifier to a power-transmission side resonance circuit (TT). Before the transmission of power, the output AC voltage (VE) of the class E amplifier is divided, and a voltage obtained by the division is supplied to the power-transmission side resonance circuit (TT). A current amplitude detection value of a power-transmission side coil (TL) at this time is obtained as an evaluation value, and whether to permit execution of power transmission is controlled on the basis of the evaluation value, through determination as to whether a foreign object is present or not.

Abstract: An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2?·fc·C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

Abstract: A contactless communication medium, includes: a coil sensitive to a magnetic field; a rectifying circuit configured to rectify an alternating power energy generated in the coil; a smoothing circuit configured to smooth a rectified output outputted from the rectifying circuit to generate a DC voltage; an output terminal connected to the smoothing circuit; a voltage detecting circuit configured to compare an output voltage extracted from the output terminal with a reference voltage; a switch configured to operate in response to an output from the voltage detection circuit and to attenuate the alternating power energy generated in the coil when the output voltage reaches a predetermined value; and a load connected to the output terminal, wherein impedance of the load has a value such that the output voltage has a predetermined value when an effective value of the magnetic field applied to the coil is 12 A/m or more.

Abstract: This power transmission apparatus transmits power to a power reception apparatus by means of a magnetic field resonance system by supplying an output AC voltage (VE) of a class E amplifier (440) to a power-transmission side resonance circuit (TT). Before the transmission of power, the output AC voltage (VE) of the class E amplifier (440) is divided, and a voltage obtained by the division is supplied to the power-transmission side resonance circuit (TT). A current amplitude detection value of a power-transmission side coil (TL) at this time is obtained as an evaluation value, and whether to permit execution of power transmission is controlled on the basis of the evaluation value, through determination as to whether a foreign object is present or not.

Abstract: As one example of the invention disclosed herein, a reference voltage generation circuit has: a first reference voltage source generating a first reference voltage; a second reference voltage source generating a second reference voltage having a temperature response different from that of the first reference voltage; a first comparator comparing the first and second reference voltages to generate a first comparison signal; and a selector selectively outputting one of the first and second reference voltages as a reference voltage according to the first comparison signal.

Abstract: As one example of the invention disclosed herein, a reference voltage generation circuit has: a first reference voltage source generating a first reference voltage; a second reference voltage source generating a second reference voltage having a temperature response different from that of the first reference voltage; a first comparator comparing the first and second reference voltages to generate a first comparison signal; and a selector selectively outputting one of the first and second reference voltages as a reference voltage according to the first comparison signal.

Abstract: As one example of the invention disclosed herein, a reference voltage generation circuit has: a first reference voltage source generating a first reference voltage; a second reference voltage source generating a second reference voltage having a temperature response different from that of the first reference voltage; a first comparator comparing the first and second reference voltages to generate a first comparison signal; and a selector selectively outputting one of the first and second reference voltages as a reference voltage according to the first comparison signal.

Abstract: A contactless communication medium, includes: a coil sensitive to a magnetic field; a rectifying circuit configured to rectify an alternating power energy generated in the coil; a smoothing circuit configured to smooth a rectified output outputted from the rectifying circuit to generate a DC voltage; an output terminal connected to the smoothing circuit; a voltage detecting circuit configured to compare an output voltage extracted from the output terminal with a reference voltage; a switch configured to operate in response to an output from the voltage detection circuit and to attenuate the alternating power energy generated in the coil when the output voltage reaches a predetermined value; and a load connected to the output terminal, wherein impedance of the load has a value such that the output voltage has a predetermined value when an effective value of the magnetic field applied to the coil is 12 A/m or more.

Abstract: As one example of the invention disclosed herein, a reference voltage generation circuit has: a first reference voltage source generating a first reference voltage; a second reference voltage source generating a second reference voltage having a temperature response different from that of the first reference voltage; a first comparator comparing the first and second reference voltages to generate a first comparison signal; and a selector selectively outputting one of the first and second reference voltages as a reference voltage according to the first comparison signal.