Abstract: A dividing unit generates, from input data, divided data corresponding to the first area and the second area to be printed by a recording head and partly overlapping each other. The dividing unit supplies the respective divided data to the first processing unit and the second processing unit which can concurrently perform processing. Each of the first and second processing units generates the recording image data from the divided data based on a characteristic of the recording head corresponding to a recording area assigned to one of the processing units and a partial area assigned to the other processing unit. Each of the first and second processing units then performs driving control on the recording head based on data, in generated recording image data, which corresponds to an area recorded by one of the processing units.

Abstract: An up-drawing continuous casting method casts a casting having a bent portion. When an angle (?) (where, 0°???90°) between an up-drawing direction of molten metal and an upper surface of a shape determining member is reduced to a first angle, drawing up the molten metal while maintaining the angle (?) at the first angle, and casting a first casting, and casting a connecting portion adjacent to the cast first casting; interrupting the drawing up of the molten metal, and dipping the connecting portion into the molten metal while passing the connecting portion through the shape determining member, and melting the connecting portion; and setting the angle (?) to a second angle that is larger than the first angle, restarting the drawing up of the molten metal and casting a second casting adjacent to the first casting.

Abstract: A medical device that includes a support member, a heat insulator provided on at least a portion of a first surface of the support member, an energy output member configured to output energy, the energy output member provided on at least a portion of a first surface of the heat insulator, the output energy configured to treat biological tissue and a heat conductor provided on at least a portion of the first surface of the support member and contacting a second surface of the heat insulator, the second surface of the heat insulator opposite the first surface of the heat insulator, wherein a portion of the support member is located proximal than the energy output, and the energy output member is configured to transfer heat to the heat insulator, and wherein the heat conductor is configured to conduct the heat from the heat insulator to the support member.

Abstract: A glass plate for a light guide plate includes a first glass layer; a second glass layer facing the first glass layer; and a third glass layer that is an intermediate glass layer formed between the first glass layer and the second glass layer, wherein the glass plate is provided with a three layer structure in a plate thickness direction, and wherein the glass plate satisfies t1C/(t1B1+t1B2+t1C)<0.03 . . . (1); n1C>n1B1 . . . (2); and n1C>n1B2 . . . (3), where t1B1 is a thickness of the first glass layer, t1B2 is a thickness of the second glass layer, t1C is a thickness of the third glass layer, n1B1 is a refractive index of the first glass layer, n1B2 is a refractive index of the second glass layer, and n1C is a refractive index of the third glass layer.

Abstract: A generation device according to the present application includes a storage unit and a generation unit. The storage unit stores information regarding an authentication module that carries out the authentication based on a result of the verification between registration data registered in advance and predetermined input data. The generation unit controls the generation of authentication result information which is information generated from the verification result acquired from the authentication module while serving as information to be processed through a specific authentication procedure used between the generation unit and an authentication server that carries out the personal authentication of a user using the authentication module.

Abstract: The stream data processing system has an input server which accumulates input stream data to be migrated, instructs a migration source and a migration destination to perform data migration, transfers accumulated data to the migration destination in response to an accumulated data transfer instruction, then stops transferring data to the migration source, and transfers subsequent data to the migration destination subsequently to the transfer of the accumulated data. The migration source migrates both a query and an intermediate value that has been produced as a result of completion of execution of the query on input data. A migration destination server reads the accumulated data and the subsequent data that are transferred from the input server, skips reading the portions of these transferred data corresponding to and preceding the migrated intermediate value, and discards the output that is transferred from the migration source and precedes the query execution results.

Abstract: An object of the present invention is to provide a compound that can be used as a more superior therapeutic agent for central nervous system diseases. The present invention provides a dihydrate of 7-[4-(4-benzo[b]thiophen-4-yl-piperazin-1-yl)butoxy]-1H-quinolin-2-one or of a salt thereof, and a process for producing the same.

Abstract: A pattern forming method includes forming a first film on a first layer and a second film on the first film. First and second concave portions are formed in the second film. A third film is formed in the concave portions and a fourth film comprising a polymer is formed on the third film. The fourth film can be processed to phase separate and form a pattern in at least the first opening. The pattern formed in the fourth film can be used in patterning films thereunder. A fifth film can be formed which covers the first concave portion and does not cover the second concave portion. The third film in the second concave portion and the first film under the second concave portion can be processed using the fifth film. The first layer can be patterned using the first, second, or third film as a mask.

Abstract: According to one embodiment, a wireless communication device includes: a receiver, processing circuitry and a transmitter. The receiver receives a first frame having first to M-th destination ID fields related to first to M-th data selection conditions and a data field, the data field including first to N-th data related to first to N-th wireless communication devices wherein M is an integer equal to or greater than 2 and N is an integer equal to or greater than 1. The processing circuitry selects at least one of the first to N-th data based on the data selection condition related to the destination ID field including an identifier of the self-wireless communication device among the first to M-th destination ID fields. The processing circuitry creates a second frame having a data field including the data selected. The transmitter transmits the second frame.

Abstract: A gas barrier laminate (10) having a very thin metal oxide film (ALD film) (5) formed on an inorganic oxide layer (3) by an atomic layer deposition method, the inorganic oxide layer (3) including a metal oxide or a metal oxynitride that contains at least either Si or Al, and a ratio (d1/d2) of a thickness (d1) of the inorganic oxide layer (3) and a thickness (d2) of the ALD film (5) being 3 to 50. The gas barrier laminate features not only a high degree of gas-barrier property but also excellent productivity.

Abstract: A module transmits send information to be processed by an information processing apparatus along a transmission path on which the information processing apparatus is present. When the send information is sent in accordance with predetermined sending parameters, if a sending failure in which a sending completion state of the send information cannot be confirmed occurs, a part or all of the sending parameters used for sending of the send information with respect to which the sending failure has occurred are changed, and the send information is resent in accordance with the sending parameters after the changing. Then, the predetermined sending parameter changed between the occurrence of the sending failure and confirmation of the sending completion state of the resent send information, and resend result information related to a send result corresponding to the changed predetermined sending parameter are acquired and sent toward a predetermined processing apparatus.

Abstract: A semiconductor device for restraining snapback is provided. The semiconductor device includes IGBT and diode regions. In a view of n-type impurity concentration distribution along a direction from a front surface to a rear surface, a local minimum value of an n-type impurity concentration is located at a border between cathode and buffer regions. A local maximum value of n-type impurity concentration is located in the buffer region. At least one of the butler and cathode regions includes a crystal defect region having crystal detects in a higher concentration than a region therearound. A peak of a crystal defect concentration in a view of crystal defect concentration distribution along the direction from the front surface to the rear surface is located in a region on the rear surface side with respect to a specific position having the n-type impurity concentration which is a half of the local maximum value.

Abstract: A rear seat side-airbag device of the technology of the present disclosure includes: a side airbag that is disposed between a side garnish and a body, the side garnish being disposed at a vehicle width direction outer-side of a seat back of a rear seat, the side airbag becoming deployed on the side of an occupant; and an airbag door garnish that covers the side airbag from a cabin side and is disposed at a position where at least part of a boundary section between the airbag door garnish and the side garnish is covered from the cabin side by webbing in an unworn state.

Abstract: A steel sheet contains, by mass %, 0.03% to 0.35% C, 0.01% to 0.50% Si, 3.6% to 8.0% Mn, 0.01% to 1.0% Al, 0.10% or less P, and 0.010% or less S, the remainder being Fe and inevitable impurities. The steel sheet is continuously annealed, heated at a heating rate of 7° C./s or more in a temperature range corresponding to an annealing furnace inside temperature of 450° C. to A° C. (where 500?A?600), the maximum end-point temperature of the steel sheet in an annealing furnace is 600° C. to 700° C., the transit time of the steel sheet in a temperature range corresponding to a steel sheet temperature of 600° C. to 700° C. is 30 seconds to 10 minutes, and the concentration of hydrogen in an atmosphere is 20% by volume or more in a heating step.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer separated from the first conductive layer in a first direction, a resistance change layer provided between the first and second conductive layers, a third conductive layer, a fourth conductive layer and a first intermediate layer. The third conductive layer is arranged with the first conductive layer in a second direction crossing the first direction. The fourth conductive layer is arranged with the second conductive layer in a direction crossing the first direction. The fourth conductive layer is arranged with the third conductive layer in the first direction. The fourth conductive layer is electrically connected with the third conductive layer. The first intermediate layer is provided between a portion of the third conductive layer and a portion of the fourth conductive layer.

Abstract: An upper and lower pair of first beads that extend in a longitudinal direction are formed at an inner side wall of a front side spacer. The first beads project to the vehicle width direction outer side. Therefore, when a collision load diagonally to the rear-left side is inputted to a front end portion of the inner side wall, the first beads act to support the inner side wall adjacent above and below the first beads from the vehicle width direction outer side. Accordingly, tilting deformation of the inner side wall toward the vehicle width direction outer side at the beginning of a micro-wrap collision of a vehicle is suppressed. An overall dimension in the vertical direction of the general portions of the inner side wall is specified to be greater than an overall dimension in the vertical direction of the first beads.

Abstract: A rear seat side airbag device comprising: a case that is disposed at a vehicle width direction outer-side of a seatback of a rear seat and configured including, in vehicle plan view, a bottom wall extending along a vehicle width direction and a pair of side walls extending toward a vehicle front from respective vehicle width direction end portions of the bottom wall, one of the side walls being formed with a shorter vehicle front-rear direction length than the other of the side walls; and an airbag module that is housed in the case and configured including a side airbag and an inflator, the inflator supplying gas to the side airbag and including a stud bolt projecting out in a vehicle width direction and fastened to the one side wall or the other side wall by the stud bolt.

Abstract: The present invention relates to a laminated glass including a first glass plate, a second glass plate and an intermediate layer provided between the first glass plate and the second glass plate, in which the first glass plate has a first face and a second face opposing the first face, the second glass plate has a third face and a fourth face opposing the third face, the intermediate layer is provided between the second face and the third face, the second glass plate is a chemically-strengthened glass, and in the second glass plate, when a compressive stress on the third face is denoted as CS(3), a tensile stress generated in an interior of the second glass plate is denoted as CT, a thickness of the second glass plate is denoted as t, a depth of the compressive stress on a side of the third face is denoted as DOL(3) and a depth of a compressive stress on a side of the fourth face is denoted as DOL(4), CS(3)/[CT2×{t?(DOL(3)+DOL(4))}] is greater than 1.1 MPa?1×mm?1.

Abstract: There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.

Abstract: Corner rounding of electrically conductive layers in a replacement electrode integration scheme can be alleviated by employing compositionally modulated sacrificial material layers. An alternating stack of insulating layers and compositionally modulated sacrificial material layers can be formed over a substrate. Each of the compositionally modulated sacrificial material layers has a vertical modulation of material composition such that each compositionally modulated sacrificial material layer provides greater resistance to conversion into a silicon-oxide-containing material at upper and lower portions thereof than at a middle portion thereof during a subsequent oxidation process. Bird's beak features can be formed with lesser dimensions, and electrically conductive layers formed by replacement of remaining portions of the sacrificial material layers with a conductive material can have less corner rounding.