Abstract: A method for producing a semiconductor device includes providing a laminated body comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence on the support member. The method further includes temporarily fixing a semiconductor member to the support member, with the temporary fixing material layer interposed therebetween, processing the semiconductor member temporarily fixed to the support member, and irradiating the laminated body with light through the support member to cause the metal foil to transfer heat to one or both of the first curable resin layer and the second curable resin layer, thereby separating the semiconductor member from the support member.

Abstract: A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270° C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25° C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

Abstract: A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

Abstract: A method for manufacturing a semiconductor device, the method including irradiating a laminated body for temporary fixing with light and thereby separating the semiconductor member from a resin layer for temporary fixing. The laminated body for temporary fixing is formed by a method including: laminating a film material for temporary fixing on a light-absorbing layer in a direction in which a first principal surface is in contact with the light-absorbing layer; and peeling off a second release film from the film material for temporary fixing to expose a second principal surface. When the maximum values of logarithmic decrements of the first principal surface and the second principal surface of the resin layer for temporary fixing in rigid pendulum measurement are designated as ?max1 and ?max2, respectively, ?max2 is smaller than ?max1.

Abstract: A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains carbon black and a curable resin component. The curable resin component contains a thermosetting resin and a thermoplastic resin. The thermoplastic resin is a hydrocarbon resin. In this film for temporary fixing, a content of the carbon black satisfies at least one condition of the following Condition (i) and Condition (ii): Condition (i): the content of the carbon black is 0.1 to 25 parts by mass with respect to the total amount of 100 parts by mass of the curable resin component; and Condition (ii): the content of the carbon black is 0.1 to 10% by volume based on the total volume of the film for temporary fixing.

Abstract: A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains: an ultraviolet absorber having a hydroxyl group; a thermosetting resin having a functional group capable of reacting with a hydroxyl group; and a thermoplastic resin. A composition for temporary fixing, used for temporarily fixing a semiconductor member and a support member contains: an ultraviolet absorber having a hydroxyl group; a thermosetting resin having a functional group capable of reacting with the hydroxyl group; and a thermoplastic resin.

Abstract: A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as reviewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

Abstract: A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

Abstract: A method for manufacturing a semiconductor device, the method including irradiating a laminated body for temporary fixing with light and thereby separating the semiconductor member from a resin layer for temporary fixing. The laminated body for temporary fixing is formed by a method including: laminating a film material for temporary fixing on a light-absorbing layer in a direction in which a first principal surface is in contact with the light-absorbing layer; and peeling off a second release film from the film material for temporary fixing to expose a second principal surface. When the maximum values of logarithmic decrements of the first principal surface and the second principal surface of the resin layer for temporary fixing in rigid pendulum measurement are designated as ?max1 and ?max2, respectively, ?max2 is smaller than ?max1.

Abstract: A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270° C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25° C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

Abstract: The present invention provides a barrier material formation composition comprising a silane oligomer, at least a part of the silane oligomer being modified with a metal alkoxide.

Abstract: A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

Abstract: A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

Abstract: The present invention relates to an aerogel laminated composite having a structure in which a porous spacer layer, an aerogel layer and a support having a heat ray reflective function or a heat ray absorbing function are laminated in this order.

Abstract: The present invention relates to a member with an aerogel layer comprising a main body part, the aerogel layer, and a barrier layer containing a siloxane compound in this order.

Abstract: The present invention provides a barrier material formation composition comprising a silane oligomer, at least a part of the silane oligomer being modified with a metal alkoxide.

Abstract: The present invention relates to a method for manufacturing a thermally insulated body comprising a thermal insulating layer integrally formed with a thermal insulation object, the method comprising a step of applying sol to the thermal insulation object and forming a thermal insulating layer including aerogel from the sol, and a thermally insulated body comprising a thermal insulating layer integrally formed with a thermal insulation object, wherein the thermal insulating layer includes aerogel.

Abstract: The present invention relates to an aerogel laminated composite having a structure in which a porous spacer layer, an aerogel layer and a support having a heat ray reflective function or a heat ray absorbing function are laminated in this order.